Revealing crystal structures and relative dielectric constants of fluorinated silicon oxides

2021 ◽  
Author(s):  
Pengyan Xue ◽  
Junwei Feng ◽  
Congwei Xie ◽  
Lan Wang ◽  
Abudukadi Tudi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Crystal Structures ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Low Dielectric ◽  
Materials Used ◽  
Low K

Low dielectric constant (low-k) fluorinated silica is one of the most important materials used in ultralarge scale integrated circuits (ULSIs); however, it is remains unclear what the minimum k possible...

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

Some Aspects of the Materials Science of Low-K Integration

2003 ◽  
Vol 766 ◽  
Author(s):  
Vincent McGahay
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Materials Science ◽  
Low Dielectric Constant ◽  
Basic Principles ◽  
Materials Properties ◽  
Low Dielectric ◽  
Critical Insight ◽  
Low K ◽  
Insight Into

AbstractThe microelectronic industry's transition to low dielectric constant insulators in the wiring levels of integrated circuits has proven to be more difficult than expected. Materials properties are an integral part of the problem, as much for yield as for reliability. Unfortunately, many properties which are important for manufacturing robustness tend to degrade as the dielectric constant is lowered. Although materials properties are a useful guide to low-K manufacturability, inflexibility with regard to specifications could ultimately limit future progress. Application of basic principles of materials science to the integration of low-K dielectrics can give critical insight into the nature of the difficulties. Several examples of problems in low-K integration which benefit from such analysis are given.

Prospects for dielectric constant reduction in integrated circuits interconnects

2014 ◽  
Vol 1692 ◽  
Author(s):  
Maxime Darnon ◽  
Nicolas Posseme ◽  
Thierry Chevolleau ◽  
Thibaut L. David
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Inner Surface ◽  
Low Dielectric Constant Materials ◽  
Low K

ABSTRACTTo improve the integrated circuits’ performance and continue the downscaling of dimensions, it is necessary to use low dielectric constant materials as interconnects insulators. Current porous SiCOH low-k dielectrics are now reaching their limits since their porosity enables the diffusion of species that modify the inner surface of the pores. To further reduce the dielectric constant, it is necessary to change paradigm in interconnects fabrication. In this paper, we discuss the most promising innovations in terms of process, materials and architectures to reduce the interconnects insulators dielectric constant.

A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Silicon Oxide ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Alkyl Groups ◽  
Doped Silicon

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

A NEW FRACTAL DESIGN OF POROUS AlN/BN/SiOC COMPOSITES WITH LOW-k AND HIGH THERMAL CONDUCTIVITY

Fractals ◽  
2019 ◽  
Vol 27 (07) ◽  
pp. 1950124
Author(s):  
XIJIE DONG ◽  
YIFAN HU ◽  
MEIJUAN YUAN ◽  
JUN ZHAO ◽  
LING CHEN
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Constant ◽  
Effective Medium Theory ◽  
Fractal Theory ◽  
Dielectric Constants ◽  
High Thermal Conductivity ◽  
Low Dielectric Constant ◽  
Medium Theory ◽  
Low Dielectric ◽  
Low K

In this work, we propose a new model for the dielectric constant and thermal conductivity, and apply it to the design of composites with low dielectric constant and high thermal conductivity based on fractal theory and effective medium theory. In particular, we use this model to prepare porous AlN/BN/SiOC composites with low dielectric constant and high thermal conductivity in different component fractions. We successfully synthesize ceramic samples with low dielectric constants [Formula: see text] and high thermal conductivity ([Formula: see text]). These results indicate that the proposed fractal design is valid.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Fabrication of low dielectric constant polyimide/TiO2 nanofibers with enhanced UV-light shielding properties

2018 ◽  
Vol 31 (8) ◽  
pp. 986-995
Author(s):  
Lei Wang ◽  
Guifen Gong ◽  
Junyao Shen ◽  
Jinsong Leng
Keyword(s):  
Dielectric Constant ◽  
Light Absorption ◽  
Composite Nanofibers ◽  
Uv Light ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Number Density ◽  
Tio2 Nanofibers ◽  
Low Dielectric ◽  
Mechanical Tensile

Polyimide (PI)/titanium dioxide (TiO2) composite nanofibers (NFs) with average diameters of 200–250 nm were synthesized via electrospinning. The total number density of dipoles decreased significantly, owing to the porous structures and compact interface between TiO2 NPs and PI matrix. All PI/TiO2 NFs maintain low dielectric constants and losses. For example, the dielectric constants of PI/TiO2-6% NFs are all lower than 2.6, being exposed to temperatures from 25°C to 200°C. Meantime, the dielectric losses of PI/TiO2-6% NFs are below 0.005. For ultraviolet (UV)-light shielding performance, the PI/TiO2 NFs exhibited good UV-light shielding and corresponding anti-photoaging properties. The reason can be ascribed from high UV-light absorption and scattering ability in the TiO2 NPs. The best UV-light absorption (average: 3.71) and corresponding absorption decay (15.13%) were achieved for optimized PI/TiO2-6% NFs. Other fundamental characteristics, such as the thermal stability, mechanical tensile property, and hydrophobicity, were also investigated. Such low dielectric constant PI/TiO2 composite NFs can be alternatively chosen under a longtime UV-light exposing condition.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Porous Silicon Oxynitride Films Derived from Polysilazane as a Novel Low-Dielectric Constant Material

1999 ◽  
Vol 565 ◽  
Author(s):  
T. Aoki ◽  
Y Shimizu ◽  
T. Kikkawa
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Silicon Oxynitride ◽  
Low Dielectric Constant ◽  
Oxidation Reactions ◽  
Sem Images ◽  
Cross Sectional ◽  
Low Dielectric ◽  
Inorganic Films ◽  
Hydrophobic Treatment

AbstractA novel spin on material derived from perhydropolysilazane that converts into ultra-low k inorganic films is described in this paper. The obtained films, cured at 400°C in N2 atmosphere, exhibit dielectric constants as low as 1.6 which do not change after holding the wafers in a clean-room mbient for 2 months. Cross-sectional SEM images of the cured films show the aggregation of small granules with diameters ranging from 5 to 30 nm. The films can be obtained by conventional SOG process: spin-coating, baking and curing, without any additional process such as hydrophobic treatment.The average atomic compositions of the films are, Si/O/N/C = 40/55/5/0.5 (atomic %), by XPS analysis. These results indicate that the films have hydrogen silicon oxynitride structures. No evolution of H2O and NH3 was detected by TDS analysis in the temperature range of RT to 800°C. Hydrophobic Si-H and Si-H2 groups remaining in the film might prevent water absorption, resulting in the low dielectric constant.The remainder of Si-H and Si-H2 constituents in the cured films is the result of selective oxidation reactions of perhydropolysilazane in the baking process with the use of a specific catalyst. The structures of the films are tailored by altering the amount of the catalyst. In this study, we also demonstrate the relationship between the effect of the catalyst and the film properties.

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