STRUCTURAL CHARACTERISTICS OF (Ba,Sr)TiO3 THIN FILMS BY RAPID THERMAL ANNEALING

2007 ◽  
Vol 14 (01) ◽  
pp. 141-145
Author(s):  
Q. Y. ZHANG ◽  
S. W. JIANG ◽  
Y. R. LI

The rapid thermal annealing (RTA) process was adapted to crystallize the amorphous ( Ba,Sr ) TiO 3 thin films prepared on Si (111) substrates by RF magnetic sputtering deposition. The effect of annealing temperature, heating rate and duration time on crystallization was studied through X-ray diffraction and atomic force microscopy. The result shows that the crystallinity and grain size were strongly dependent on the temperature, heating rate, and duration time. Higher heating rate leads to smaller grain size. In high heating rate, the grain size shows different dependence of temperature from that of low heating rate. For a heating rate of 50°C/s, the grain size decreased with temperature increasing below 700°C, while after that temperature, the grain size increased slightly with the temperature increasing. At a certain temperature, the crystallinity and surface roughness improved with increase in annealing time, while grain size changed little. The effect of rapid heating rate on the nucleation and grain growth has been discussed, which contributes to the limited grain size of the annealed ( Ba,Sr ) TiO 3 thin films.

2004 ◽  
Vol 830 ◽  
Author(s):  
Hua. Wang ◽  
Minfang Ren

AbstractFerroelectric Bi4Ti3O12 thin films were fabricated by sol-gel method with multiple rapid thermal annealing (MRTA) techniques on Pt/Ti/SiO2/p-Si substrates. The effect of annealing temperature on crystallinity, ferroelectric and electrical properties of Bi4Ti3O12 films derived by MRTA and by normal RTA were investigated. The results reveal that the grain size and the roughness of surface increase with the annealing temperature increase, but the maximal remnant polarization of Bi4Ti3O12


2009 ◽  
Vol 79-82 ◽  
pp. 911-914
Author(s):  
S.C. Chen ◽  
T.H. Sun ◽  
Po Cheng Kuo

Single-layered FePt films of 30 nm thick were annealed at temperature between 300 and 800 °C for 1–180 sec by a rapid thermal annealing (RTA) with a high heating rate of 100 °C/sec. It is found that both the grain size and magnetic domain size of the FePt film increase with increasing annealing temperature and annealing time. The FePt films exhibited soft magnetic properties and without domain images were observed by magnetic force microscope (MFM) when the films were post-annealed at below 500 °C for 180 sec. The in-plane coercivity (Hc//) and perpendicular coercivity (Hc⊥) of FePt film increases significantly to 7.5 and 6.5 kOe respectively as annealing temperature increases to 600 °C. When the annealing temperature is increased to 700 °C, they are increased to 11.1 and 9.5 kOe, respectively, and the domain structure inclines to isolated domain. However, further increasing the annealing temperature to 800 °C, the Hc// and Hc⊥ values decrease to 9.8 and 8.9 kOe respectively due to largely increase the grain size of FePt and change the domain structure from isolation to continuity. On the other hand, in order to transform the FePt film from disordered γ phase to the ordered L10 phase, the annealing time of over 3 seconds is necessary when the film was post-annealed at 700 °C with a high heating rate of 100 °C/sec by RTA technique.


2005 ◽  
Vol 274 (3-4) ◽  
pp. 500-505 ◽  
Author(s):  
S.W. Jiang ◽  
Q.Y. Zhang ◽  
Y.R. Li ◽  
Y. Zhang ◽  
X.F. Sun ◽  
...  

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  

1996 ◽  
Vol 35 (Part 1, No. 8) ◽  
pp. 4220-4224 ◽  
Author(s):  
M. D. Kim ◽  
T. W. Kang ◽  
M. S. Han ◽  
T. W. Kim

1995 ◽  
Vol 387 ◽  
Author(s):  
M. J. O'Keefe ◽  
C. L. Cerny

AbstractPhysical vapor deposition of Group VI elements (Cr, Mo, W) can lead to the formation of a metastable A-15 crystal structure under certain processing conditions. Typically, a thermally induced transformation of the metastable A-15 structure into the equilibrium body centered cubic structure has been accomplished by conventional furnace annealing at T/Tm ≈ 0.3 from tens of minutes to several hours. In this study we report on the use of rapid thermal annealing to transform sputter deposited A- 15 crystal structure tungsten and chromium thin films into body centered cubic films within the same temperature range but at times on the order of one minute. The minimum annealing times and temperatures required for complete transformation of the A-15 phase into the BCC phase varied from sample to sample, indicating that the transformation was dependent on the film characteristics. The electrical resistivity of A-15 Cr and W films was measured before and after rapid thermal annealing and was found to significantly decrease after transformation into the body center cubic phase.


1990 ◽  
Vol 164-165 ◽  
pp. 359-365 ◽  
Author(s):  
J. Baixeras ◽  
F. Carrie ◽  
F.Hosseini Teherani ◽  
A. Kreisler

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