IMPACT OF N DOPING ON THE PHYSICAL PROPERTIES OF ZnO THIN FILMS

2018 ◽  
Vol 25 (01) ◽  
pp. 1850035 ◽  
Author(s):  
NRIPASREE NARAYANAN ◽  
N. K. DEEPAK
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Compositional Analysis ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
N Doping

Structural, optical and electrical properties of bare and N monodoped ZnO thin films were investigated. The samples were prepared on glass substrates by spray pyrolysis technique. N doping resulted in p type electrical conductivity as evident from the Hall measurement results. XRD analysis confirmed the structural purity of all the films and compositional analysis by energy dispersive X-ray spectroscopy verified the inclusion of N in doped films in addition to Zn and O. Doping resulted in deterioration in crystallinity. Optical transmittance got diminished with doping due to the degradation in crystallinity as well as due to the presence of deep N related defects as evident from the photoluminescence spectra. Optical energy gap red-shifted with doping percentage due to the introduction of impurity levels near the valence band edge within the forbidden gap with acceptor doping.

Melioration of Optical and Electrical Performance of Ga-N Codoped ZnO Thin Films

2018 ◽  
Vol 73 (6) ◽  
pp. 547-553 ◽  
Author(s):  
Nripasree Narayanan ◽  
N. K. Deepak
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Optical Transmittance ◽  
Electrical Performance ◽  
Zno Thin Films ◽  
Composition Analysis ◽  
Optical Energy Gap ◽  
X Ray

AbstractTransparent and conducting p-type zinc oxide (ZnO) thin films doped with gallium (Ga) and nitrogen (N) simultaneously were deposited on glass substrates by spray pyrolysis technique. Phase composition analysis by X-ray diffraction confirmed the polycrystallinity of the films with pure ZnO phase. Energy dispersive X-ray analysis showed excellent incorporation of N in the ZnO matrix by means of codoping. The optical transmittance of N monodoped film was poor but got improved with Ga-N codoping and also resulted in the enhancement of optical energy gap. Hole concentration increased with codoping and consequently, lower resistivity and high stability were obtained.

TRANSPARENT ZINC OXIDE THIN FILMS PREPARED BY PLD WITH DIFFERENT OXYGEN PRESSURES

2007 ◽  
Vol 14 (03) ◽  
pp. 425-429
Author(s):  
KASIMAYAN UMA ◽  
MOHAMAD RUSOP ◽  
TETSUO SOGA ◽  
TAKASHI JIMBO
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
High Oxygen Pressure ◽  
High Pressure Oxygen

ZnO thin films were prepared on silicon (001) and corning glass substrates using Pulsed laser deposition (PLD) technique with different oxygen pressures. The microstructure, crystallinity, and resistivity of the films depend on the oxygen pressure used. The effects of the films grown at room temperature and at 500°C with different oxygen pressures have been investigated by analyzing the optical and electrical properties of the film. The XRD analysis showed that the high intensity of c-axis orientation of ZnO thin films was obtained under high oxygen pressure and this leads to greater electrical and optical properties. By applying high pressure oxygen, the resistivity value was decreased and optical transmittance became higher in the visible region. The surface morphology of the films showed that the smooth surface was observed without any cracks.

scholarly journals Optical Constants of Fe2O3 and TiO2:Fe2O3 Thin Films Prepared by Spray Pyrolysis Technique

2018 ◽  
Vol 26 (10) ◽  
pp. 224-232
Author(s):  
Asia Hussein Kadhim ◽  
Nahida B. Hasan
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Spray Pyrolysis ◽  
Optical Constants ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Optical Transmittance ◽  
Dielectric Constants ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates

"In the present work, optical constants have been studied for pure and titanium dioxide (TiO2) doped iron oxide (Fe2O3) thin films with different titanium dioxide dopant concentrations (1, 3 and 5 %) prepared by chemical spray pyrolysis technique on glass substrates. The optical properties of the films, which were prepared with a thickness of (260±10) nm, have been determined by using Shimadzu spectrophotometer, the optical transmittance measurements in the spectral region from (500- 1100) nm. Direct energy gap for (Fe2O3) equal (2.01) eV, it increases with increasing of TiO2%. The optical constants such as refractive index, extinction coefficient and dielectric constants have been calculated for all prepared films. The results show that all optical constants decrease with the increasing of dopant ratios."

Praseodymium – A Competent Dopant for Luminescent Downshifting and Photocatalysis in ZnO Thin Films

2018 ◽  
Vol 73 (5) ◽  
pp. 441-452 ◽  
Author(s):  
Nripasree Narayanan ◽  
N.K. Deepak
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Energy Gap ◽  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Spray Pyrolysis Method ◽  
Optical Energy Gap ◽  
X Ray ◽  
Forbidden Gap

AbstractHighly transparent and conducting Zinc oxide (ZnO) thin films doped with Praseodymium (Pr) were deposited on glass substrates by using the spray pyrolysis method. The X-ray diffraction (XRD) analysis revealed the polycrystallinity of the deposited films with a hexagonal wurtzite structure, whereas the energy-dispersive X-ray spectroscopy (EDX) analysis confirmed the incorporation of Pr in the films. The optical energy gap decreased by Pr doping due to the merging of the conduction band with the impurity bands formed within the forbidden gap. The room temperature photoluminescence spectra of the Pr-doped film showed enhancement of visible emission, suggesting efficient luminescent downshifting. The photocatalytic activity of the Pr-doped films is higher than that of undoped films due to the effective suppression of the rapid recombination of the photo-generated electron-hole pairs. The impurity levels formed within the forbidden gap act as efficient luminescent centers and electron traps, which lead to luminescent downshifting and enhanced photocatalytic activity.

scholarly journals Effect of Substrate Temperature on Structural and Optical Properties of CdO Thin Films

2014 ◽  
Vol 27 ◽  
pp. 47-55
Author(s):  
Hanan R.A. Ali
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Xrd Analysis ◽  
Structural And Optical Properties ◽  
Optical Energy Gap ◽  
Cdo Thin Films

Thin films of CdO have been prepared by spray pyrolysis technique. XRD analysis reveals that all the prepared samples were polycrystalline and have preferred orientation along [111] orientation. The surface topography was determined by AFM which indicate that surface roughness and rms roughness were increased by the increasing of substrate temperature. The optical energy gap were determined and its value lies between (2.4-2.5) eV.

scholarly journals Irradiation Effects on The Sensitivity of ZnO Thin Films Synthesized on Glass Substrate by Sol-gel Method

2021 ◽  
pp. 130-137
Author(s):  
Yasir Yahya Kasim ◽  
Ghazwan Ghazi Ali ◽  
Marwan Hafeedh Younus
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Irradiation Time ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Alpha Particles ◽  
Zno Thin Films ◽  
Optical Energy Gap ◽  
Gel Method ◽  
Sol Gel Method

This work investigates the structural, optical, and surface properties of ZnO thin films prepared by sol-gel method. The effect on waveguide sensor was examined at different irradiation durations of alpha particles. The X-ray diffraction (XRD) measurements revealed that the crystalline phase of ZnO thin films does not change after irradiation and showed a hexagonal structure of wurtzite type with an orientation toward (002). Moreover, ZnO thin films absorbance was increased with increasing irradiation time, whereas the transmittance was decreased. Additionally, increasing the irradiation time of alpha particles caused an increase in the extinction coefficient and the imaginary part,  while the optical energy gap of the ZnO samples was decreased. Finally, the maximum value of sensitivity was 42%, found at 6 min of irradiation duration.

scholarly journals Plasmonic nanostructures of SnO2:Sb thin film under gamma radiation response

2020 ◽  
Vol 38 (1) ◽  
pp. 62-72
Author(s):  
A. F. Maged ◽  
M. Amin ◽  
H. Osman ◽  
L.A. M. Nada
Keyword(s):  
Gamma Radiation ◽  
Thermal Annealing ◽  
Energy Gap ◽  
Negative Refractive Index ◽  
Spray Pyrolysis Technique ◽  
Radiation Response ◽  
Plasmonic Nanostructures ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
Optical Applications

AbstractThis paper is a part of a natural dye solar cell project. Conductive transparent oxide (CTO) films have been deposited onto preheated glass substrates using a spray pyrolysis technique. The optical, electrical, structural properties as well as thermal annealing and gamma radiation response were studied. The average optical energy gap of doped films for direct allowed and direct forbidden transitions were found to be 3.92 and 3.68 eV, respectively. The plasmon frequency and plasmon energy after doping were found to be 3.48 × 1014 s −1 and 0.23 eV. The negative absorbance of the doped film was observed in UV-Vis range after applying both thermal annealing and γ-dose irradiation with 22 kGy. The negative refractive index of the doped film in UV range (220 – 300 nm) is promising for optical applications. The electron mobility μe reached a maximum of 27.4 cm2 V−1 s−1 for Sb concentration of 10 %. The corresponding resistivity ρ, and sheet resistance Rs reached their minimum values of 1.1 × 10−3 Ω cm and 35 Ω sq−1, respectively. The dopant concentration has been increased from 4.13 × 1019 to 2.1 × 1020cm−3. The doped film was found to exhibit three diffraction peaks associated with (2 2 2), (2 0 0), and (2 1 1) reflection planes, of which the peak of (2 2 2) of Sb2O3 and the peak of (2 0 0) were very close.

scholarly journals Effect of Pb percentage on optical parameters of PbxCd1-xSe thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 1-7
Author(s):  
Farah Q. Kamil
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Optical Measurements ◽  
Optical Parameters ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Glass Substrates

PbxCd1-xSe compound with different Pb percentage (i.e. X=0,0.025, 0.050, 0.075, and 0.1) were prepared successfully. Thin filmswere deposited by thermal evaporation on glass substrates at filmthickness (126) nm. The optical measurements indicated thatPbxCd1-xSe films have direct optical energy gap. The value of theenergy gap decreases with the increase of Pb content from 1.78 eV to1.49 eV.

scholarly journals Optical and Structural Properties of CdS Quantum Dots Synthesized Using (MW-CBD) Technique

2020 ◽  
pp. 44-52
Author(s):  
Ahmed Ahmed S. Abed ◽  
Sattar J. Kasim ◽  
Abbas F. Abbas
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Room Temperature ◽  
Energy Gap ◽  
Cds Nanoparticles ◽  
Cds Quantum Dots ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
High Adhesion ◽  
Uv Visible

In the present study, the microwave heating method was used to prepare cadmium sulfide quantum dots CdSQDs films. CdS nanoparticles size average obtained as (7nm). The morphology, structure and composition of prepared CdSQDs were examined using (FE-SEM), (XRD) and (EDX). Optical properties of CdSQDs thin films formed and deposited onto glass substrates have been studied at room temperature using UV/ Visible spectrophotometer within the wavelength of (300-800nm), and Photoluminescence (PL) spectrum. The optical energy gap (Eg) which estimated using Tauc relation was equal (2.6eV). Prepared CdS nanoparticles thin films are free from cracks, pinholes and have high adhesion to substrate.

Structural, Optical, and Optoelectrical Studies of Spray Pyrolyzed CuGaSnS4 Thin Films

2021 ◽  
Author(s):  
Islam M El radaf ◽  
Hnan Y Alzahrani
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Nonlinear Optical ◽  
Energy Gap ◽  
Structural Parameters ◽  
Stoichiometric Composition ◽  
Optical Energy Gap ◽  
Linear Absorption ◽  
Glass Substrates ◽  
D Values

Abstract We deposited CuGaSnS4 thin films on soda-lima glass substrates via a spray pyrolysis process. The X-ray diffraction of CuGaSnS4 films established the formation of an orthorhombic single phase. In addition, the structural parameters of the CuGaSnS4 films were estimated by Debye-Scherer’s formulas, which showed that an enhancement in crystallite size (D) values occurred by increasing the thickness of the investigated films. The EDAX pattern of CuGaSnS4 films confirms a stoichiometric composition. The optical results revealed that the CuGaSnS4 films possessed a direct optical energy gap (Eg). The Eg values were reduced from 1.50 to 1.38 eV with the increase in thickness. Also, there was an observed increase in the linear refractive index and the linear absorption coefficient values occurred due to the increased thickness. Finally, the optoelectrical constants of the sprayed CuGaSnS4 films such as the optical conductivity (σopt) and the optical free carrier concentration to effective mass (N_opt/m^* ) were enlarged with increasing film thickness. The nonlinear optical study showed that the increase in film thickness enhanced the nonlinear optical constants of CuGaSnS4 films. The hot-probe procedure shows that the sprayed CuGaSnS4 films expose p-type conductivity.

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