TRANSPARENT ZINC OXIDE THIN FILMS PREPARED BY PLD WITH DIFFERENT OXYGEN PRESSURES

2007 ◽  
Vol 14 (03) ◽  
pp. 425-429
Author(s):  
KASIMAYAN UMA ◽  
MOHAMAD RUSOP ◽  
TETSUO SOGA ◽  
TAKASHI JIMBO
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
High Oxygen Pressure ◽  
High Pressure Oxygen

ZnO thin films were prepared on silicon (001) and corning glass substrates using Pulsed laser deposition (PLD) technique with different oxygen pressures. The microstructure, crystallinity, and resistivity of the films depend on the oxygen pressure used. The effects of the films grown at room temperature and at 500°C with different oxygen pressures have been investigated by analyzing the optical and electrical properties of the film. The XRD analysis showed that the high intensity of c-axis orientation of ZnO thin films was obtained under high oxygen pressure and this leads to greater electrical and optical properties. By applying high pressure oxygen, the resistivity value was decreased and optical transmittance became higher in the visible region. The surface morphology of the films showed that the smooth surface was observed without any cracks.

IMPACT OF N DOPING ON THE PHYSICAL PROPERTIES OF ZnO THIN FILMS

2018 ◽  
Vol 25 (01) ◽  
pp. 1850035 ◽  
Author(s):  
NRIPASREE NARAYANAN ◽  
N. K. DEEPAK
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Compositional Analysis ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
N Doping

Structural, optical and electrical properties of bare and N monodoped ZnO thin films were investigated. The samples were prepared on glass substrates by spray pyrolysis technique. N doping resulted in p type electrical conductivity as evident from the Hall measurement results. XRD analysis confirmed the structural purity of all the films and compositional analysis by energy dispersive X-ray spectroscopy verified the inclusion of N in doped films in addition to Zn and O. Doping resulted in deterioration in crystallinity. Optical transmittance got diminished with doping due to the degradation in crystallinity as well as due to the presence of deep N related defects as evident from the photoluminescence spectra. Optical energy gap red-shifted with doping percentage due to the introduction of impurity levels near the valence band edge within the forbidden gap with acceptor doping.

Structural, Electrical and Optical Properties of Li-Doped ZnO Thin Films Influenced by Annealing Oxygen Pressure

2011 ◽  
Vol 299-300 ◽  
pp. 530-533
Author(s):  
Li Dan Tang ◽  
Bing Wang ◽  
Jian Zhong Wang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Pressure ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Surface Optical ◽  
Doped Zno

Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and In-situ annealing. The structural, electrical and optical properties of Li-doped ZnO films strongly depend on the annealing oxygen pressure. XRD and AFM analysis indicate that the ZnO films possess a good crystallinity with c-axis orientation, uniform thickness and dense surface. Optical transmission spectra show a high transmittance (~85%) in the visible region. Hall measurement demonstrates that ZnO films have p-type conduction with a Hall mobility of 5.0 cm2/Vs, resistivity of 0.97Ωcm and carrier concentration of 1.60×1017cm-3when annealing oxygen pressure is 1Pa.

The Preparation and Optical Property of ZnO Thin-Film by Electrospray

2009 ◽  
Vol 155 ◽  
pp. 151-154 ◽  
Author(s):  
Yan Huai Ding ◽  
Ping Zhang ◽  
Yong Jiang ◽  
Fu Xu ◽  
Jing Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Force Microscopy ◽  
Glass Substrates

ZnO thin-films were prepared from sol-gel precursors using electrospray method. The structure, morphology and optical property of ZnO thin-films deposited on glass substrates were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and absorption spectrums (ABS). The surface images obtained directly from AFM showed the compact ZnO films were composed of wurtzite ZnO nanoparticles. The ZnO films presented high optical transmittance in the visible region and strong absorption in ultraviolet region.

scholarly journals Growth of Polycrystalline In2S3 Thin Films by Chemical Bath Deposition Using Acetic Acid as a Complexing Agent for Solar Cell Application

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
G. R. Gopinath ◽  
K. T. Ramakrishna Reddy
Keyword(s):  
Acetic Acid ◽  
Solar Cell ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Complexing Agent ◽  
Solar Cell Application ◽  
X Ray ◽  
Glass Substrates

In2S3 films have been successfully deposited on Corning glass substrates via chemical bath deposition (CBD) method using acetic acid as a novel complexing agent. The layers were grown by employing synthesis using indium sulphate and thioacetamide (TA) as precursors by varying TA concentration in the range of 0.1–0.5 M, keeping other deposition parameters constant. Energy dispersive X-ray analysis (EDAX) revealed an increase of S/In ratio in the films with the increase of TA concentration in the solution. The X-ray diffraction (XRD) analysis indicated a change in preferred orientation from (311) plane related to cubic structure to the (103) direction corresponding to the tetragonal crystal structure. The evaluated crystallite size varied in the range of 15–25 nm with the increase of TA concentration. Morphological analysis showed that the granular structure and the granular density decrease with the raise of TA concentration. The optical properties of the layers were also investigated using UV-Vis-NIR analysis, which indicated that all the In2S3 films had the optical transmittance >60% in the visible region, and the evaluated energy band varied in the range of 2.87–3.32 eV with the change of TA concentration. Further, a thin film heterojunction solar cell was fabricated using a novel absorber layer, SnS, with In2S3 as a buffer. The unoptimized SnS/In2S3/ZnO:Al solar cell showed a conversion efficiency of 0.6%.

scholarly journals High transparency and conductivity of heavily In-doped ZnO thin films deposited by dip-coating method

2018 ◽  
Vol 36 (3) ◽  
pp. 427-434 ◽  
Author(s):  
S. Benzitouni ◽  
M. Zaabat ◽  
A. Mahdjoub ◽  
A. Benaboud ◽  
B. Boudine
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Atomic Ratio ◽  
Glass Substrates ◽  
In Doping ◽  
Coating Method ◽  
Diffraction Patterns ◽  
Dip Coating Method

AbstractHeavily In doped zinc oxide (IZO) thin films were deposited on glass substrates by dip-coating method with different concentrations of indium. The effect of heavy In doping on the structural, morphological, optical and electrical properties of ZnO was discussed on the basis of XRD, AFM, UV-Vis spectra and Hall effect measurements. The diffraction patterns of all deposited films were indexed to the ZnO wurtzite structure. However, high In doping damaged the films crystallinity. The highest optical transmittance observed in the visible region (>93 %) exceeded that of ITO: the absolute rival of the most commercial TCOs. The grain size significantly decreased from 140 nm for undoped ZnO to 17.1 nm for IZO with the greatest In ratio. The roughness decreased with increasing In atomic ratio, indicating an improvement in the surface quality. Among all synthesized films, the sample obtained with 11 at.% indium showed the best TCO properties: the highest transmittance (93.5 %) and the lowest resistivity (0.41 Ωcm) with a carrier concentration of 2.4 × 1017 cm−3. These results could be a promising solution for possible photonic and optoelectronic applications.

scholarly journals High Performance Transparent Conducting Films of Cadmium Indate Prepared by Rf sputtering.

1996 ◽  
Vol 426 ◽  
Author(s):  
T. J. Coutts ◽  
X. Wu ◽  
W. P. Mulligan
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
High Performance ◽  
Visible Region ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Before And After

AbstractWe are examining various spinel-structured thin films (e.g., Cd2SnO4, Zn2SnO4) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, we report on cadmium indate (CdIn2O4, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3x10-4Ω cm were achieved for a film thickness of 0.55 μm. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm2 V-s-1 and the highest carrier concentration was 7.5x1020 cm-3.

Structural, Optical and Electrical Characterization of Mo Doped In2O3 Thin Films Prepared via Sol-Gel Spin Coating Technique

2012 ◽  
Vol 576 ◽  
pp. 607-610 ◽  
Author(s):  
Saeed Mohammadi ◽  
Hossein Abdizadeh ◽  
Mohammad Reza Golobostanfard
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Visible Region ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
Spin Coating Technique ◽  
Coating Technique ◽  
Glass Substrates ◽  
Average Optical Transmittance

The optically transparent conducting molybdenum doped indium oxide (IMO) thin films were deposited on glass substrates by sol-gel spin coating technique. The effect of various molybdenum contents in the range of 0.25–1 at.% on the structural, morphological, optical and electrical properties was studied. XRD results confirmed the formation of cubic bixbyite structure of In2O3 with preferred orientation along (222) plane. Microstructural studies show nearly spherical morphology for thin films with size in the range of 20-40 nm. The films doped with 0.25 at.% Mo found to exhibit a minimum electrical resistivity of 188×10-3 Ω.cm and an average optical transmittance of more than 80% in the visible region with a band gap of 3.85 eV.

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

2017 ◽  
Vol 73 ◽  
pp. 22-30
Author(s):  
Marimuthu Karunakaran ◽  
S. Maheswari ◽  
Kasinathan Kasirajan ◽  
Sivaji Dinesh Raj ◽  
Rathinam Chandramohan
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
Layer Growth ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Silar Method ◽  
X Ray ◽  
Glass Substrates ◽  
Mn Doped

The growth of highly textured Mn doped Zinc oxide (ZnO) thin films with a preferred (002) orientation has been reported by employing successive ionic layer growth by adsorption reaction (SILAR) using a sodium zincate bath on glass substrates has been reported. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline. Morphology of the films was found to be uniform with smaller grains and exhibits a structure with porous. The calculated Band gap value was found to be 3.21 eV prepared at 15 mM MnSO4 concentration.

Structural, Optical and Electrical Properties of Multiple Layers Nano-Structured Zinc Oxide Thin Film

2015 ◽  
Vol 1109 ◽  
pp. 401-404
Author(s):  
I. Saurdi ◽  
Mohamad Hafiz Mamat ◽  
M.F. Malik ◽  
A. Ishak ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Visible Region ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Thin Film Thickness ◽  
Glass Substrates ◽  
Average Transmittance

The nanoStructured ZnO thin films were prepared by Spin coating technique on glass substrates at various layers. The structural and optical properties were characterized by field emission scanning electron microscopy (FESEM) and UV-Vis-NIR respectively. The surface morphology reveals that the nanostructured ZnO thin films become densely packed as the thickness increased. The average particles size of ZnO thin film estimated from FESEM images at different layers of 1, 3, 5, 7, 9 were 20nm, 28nm, 36nm, 39nm and 56nm, respectively. The surface roughness of thin films was increase as the thin film thickness increases. The results show all films are transparent in the visible region (400-800 nm) with average transmittance above 85 %. Meanwhile, the optical band gap was decrease as the film thickness increases. The conductivity of ZnO thin film slightly improved as the thickness increased as measured through two probes 1-V measurement system.

PREPARATION AND CHARACTERIZATION OF F-DOPED SnO2 NANO-THIN FILMS DEPOSITED ON PET SUBSTRATES

2009 ◽  
Vol 08 (01n02) ◽  
pp. 157-161
Author(s):  
LE-XI SHAO ◽  
JUN ZHANG ◽  
SHU-WEN XUE ◽  
XIAO-PING LIU
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Visible Region ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Processing Parameters ◽  
Bandgap Energy ◽  
Partial Pressures ◽  
Hall Effect Measurements

Tin oxide doped with fluorine ( SnO 2: F ) thin films were deposited on polyethylene terephthalate (PET) foils by RF reaction cosputtering at low temperature in different oxygen partial pressures. X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM) were used to study the effects of the processing parameters on the crystallization and surface topography of the as-prepared SnO 2 films. The results showed that high quality SnO 2: F thin films could be obtained by optimizing deposition conditions without intentional annealing, i.e. oxygen partial pressure to total pressure of higher than 50%, RF power higher than 50 W. The optical transmittance measurements revealed that the SnO 2: F films were highly transparent in the visible region (90%) and showed an absorption edge redshift with increasing oxygen partial pressure from 1/4 to 3/4. The optical bandgap energy was calculated to be about 3.6 eV. Hall effect measurements confirmed that the as-prepared SnO 2 thin films possessed good electrical properties with a low resistivity of 10-3 Ω · cm, a high carrier concentration of 9.6 × 1018 cm-3, and a Hall mobility of about 200 cm2/V · s.

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