FORMATION OF TRIANGULAR Cu MICROCRYSTALS IN Ti/Cu/Si THIN FILMS DURING ANNEALING

2018 ◽  
Vol 25 (05) ◽  
pp. 1850097
Author(s):  
QIJING LIN ◽  
WEIXUAN JING ◽  
ZHUANGDE JIANG ◽  
NA ZHAO ◽  
ZIRONG WU ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rapid Thermal Annealing ◽  
Dc Magnetron Sputtering ◽  
Triangular Pyramid ◽  
Single Side ◽  
Surface Patterns ◽  
Cu Thin Film ◽  
Sputtering System

Sandwich stacked Ti/Cu/Si thin films were deposited on a single-side polished Si(111) substrate using DC magnetron sputtering system and annealed using a rapid thermal annealing (RTA) system. Complex dendritic patterns, whose branches are composed of Cu rods and triangular Cu microcrystals were obtained on Ti/Cu thin film annealed at 700[Formula: see text]C. The shape of one triangular Cu microcrystal is a truncated equilateral triangular pyramid with a flat top. Triangular Cu microcrystals grow in the number when Ti/Cu thin films are annealed at 800[Formula: see text]C. Experimental results show that anisotropy affects the growth of surface patterns and the top Ti capping layer works as a protection for the underlying Cu layer from oxidation.

Tunable ion flux density and its impact on AlN thin films deposited in a confocal DC magnetron sputtering system

2018 ◽  
Vol 348 ◽  
pp. 159-167 ◽  
Author(s):  
M. Trant ◽  
M. Fischer ◽  
K. Thorwarth ◽  
S. Gauter ◽  
J. Patscheider ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Flux Density ◽  
Ion Flux ◽  
Dc Magnetron Sputtering ◽  
Sputtering System

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 229-233
Author(s):  
A.R. Nurhamizah ◽  
Zuhairi Ibrahim ◽  
Rosnita Muhammad ◽  
Yussof Wahab ◽  
Samsudi Sakrani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Post Annealing ◽  
Two Temperatures ◽  
Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Tantalum Nitride ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Thin Film Resistors

Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

2014 ◽  
Vol 575 ◽  
pp. 254-263 ◽  
Author(s):  
Hua Jing Zheng ◽  
Chi Zhang ◽  
Zheng Ruan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Magnetron Sputtering ◽  
Water Pressure ◽  
Dc Magnetron Sputtering ◽  
Sputtering Power ◽  
Conductive Substrate ◽  
Ito Thin Films ◽  
Sputtering Pressure

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.

Effect of Operated Pressure on Anticorrosive Behavior of Ta2O5 Thin Film Grown by D.C. Reactive Magnetron Sputtering System

2013 ◽  
Vol 802 ◽  
pp. 242-246 ◽  
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Yossawat Rayanasukha ◽  
Darinee Phromyothin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Film Surface ◽  
Grazing Incidence ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Sputtering System

Tantalum oxide (Ta2O5) thin films, 100 nm thick were deposited by D.C. reactive magnetron sputtering system at different operated pressure on unheated p-type silicon (100) wafer and 304 stainless substrates. Their crystalline structure, film surface morphology and optical properties, as well as anticorrosive behavior, were investigated. The structure and morphology of films were characterized by grazing-incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). The optical properties were determined by spectroscopic ellipsometry (SE). The corrosion performances of the films were investigated through potentiostat and immersion tests in 1 M NaCl solutions. The results showed that as-deposited Ta2O5 thin films were amorphous. The refractive index varied from 2.06 to 2.17 (at 550 nm) with increasing operated pressure. The corrosion rate of Ta2O5 thin film improves as the operated pressure decreases. The Ta2O5 thin films deposited at 3 mTorr operated pressure could be exhibited high performance anticorrosive behavior.

The Effects of SiO, SiON on IZO Thin Film Deposited by DCMG Method

2007 ◽  
Vol 124-126 ◽  
pp. 455-458
Author(s):  
Seong Hoon Kim ◽  
Han Ki Yoon ◽  
Riichi Murakami
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Oxygen Content ◽  
Glass Substrate ◽  
Single Layer ◽  
Target Type ◽  
Dc Magnetron Sputtering ◽  
Izo Thin Film ◽  
Pet Substrate

The thin films of SiO and SiON were deposited individually by the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate. And it was deposited IZO(In2O3 (90wt.%) + ZnO(10wt.%)) on those films. The effects of SiO and SiON were investigated on properties of IZO thin films. AFM images of IZO thin film included SiON film were shown smoother surfaces than that included SiO film. Multi layers of IZO were shown good properties because it have high transmissivity. Resistivity is in inverse proportion to Mobility. If it deposited SiO and SiON, generate layer of change between two layers(SiO or SiON + Substrate). Layer of change influenced resistance because Oxygen content was more than single layer of IZO. In case of using PET substrate, it influenced stronger than Glass substrate for rigid gas permeable and osmosis.

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