STRUCTURAL AND MAGNETIC PROPERTIES OF EPITAXIAL Ni80Fe20 THIN FILMS ON Cu/Si

1995 ◽  
Vol 02 (04) ◽  
pp. 427-437 ◽  
Author(s):  
I. HASHIM ◽  
H.S. JOO ◽  
H.A. ATWATER
Keyword(s):  
Magnetic Properties ◽  
Domain Walls ◽  
High Energy ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Crystal Films

Single-crystal films of permalloy ( Ni 80 Fe 20) were grown on Cu (001) seed layers oriented epitaxially with Si (001). The microstructural properties were measured using in-situ reflection high-energy electron diffraction, and ex-situ transmission electron microscopy, x-ray diffraction, and atomic force microscopy, whereas the magnetic properties were probed using in-situ magneto-optic Kerr effect and ex-situ vibrating sample magnetometry. Anisotropic magnetoresistance and resistivity for some of the samples were also measured. The coercivity for thinner (≤5 nm) Ni 80 Fe 20 was significantly higher (10–20 Oersteds) than polycrystalline films deposited on SiO 2/ Si , and was also higher than films deposited on lattice-matched Cu x Ni 1–x alloys. These magnetic properties were explained using a theoretical model involving interaction of domain walls with defects such as misfit dislocations and coherent islands, due to the mismatch between Ni 80 Fe 20 and Cu .

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

In Situ Analysis of magnetic and Structural Properties of Epitaxial and Polycrystalline Ni80Fe20 Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
I. Hashim ◽  
H.A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Magnetic Properties ◽  
Kerr Effect ◽  
High Energy ◽  
Epitaxial Films ◽  
Interface Roughness ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTWe have investigated structural and magnetic properties of epitaxial Ni80Fe20 films grown on relaxed epitaxial Cu/Si (001) films. The crystallographic texture of these films was analyzed in situ by reflection high energy electron diffraction (RHEED), and ex situ by x-ray diffraction and cross-sectional transmission electron Microscopy (XTEM). In particular, RHEED intensities were recorded during epitaxial growth, and intensity profiles across Bragg rods were used to calculate the surface lattice constant, and hence, find the critical epitaxial thickness for which Ni80Fe20 grows pseudomorphically on Cu (100). XTEM analysis indicated that the epitaxial films had atomically-abrupt interfaces which was not the case for polycrystalline Cu and Ni80Fe20 film interfaces. The Magnetic properties of these epitaxial films were Measured in situ using Magneto-optic Kerr effect magnetometry and were compared with those of polycrystalline films grown on SiO2/Si. Large Hc (∼ 35 Oe) was observed for epitaxial Ni80Fe20 films less than 3.0 nm thick whereas for increasing thickness, Hc decreased approximately monotonically to a few Oersteds. Correlations were made between magnetic properties of these epitaxial films, the strain in the film and the interface roughness obtained from XTEM analysis.

Stress-driven surface evolution in heteroepitaxial thin films: Anisotropy of the two-dimensional roughening mode

1999 ◽  
Vol 14 (8) ◽  
pp. 3247-3256 ◽  
Author(s):  
Cengiz S. Ozkan ◽  
William D. Nix ◽  
Huajian Gao
Keyword(s):  
Defect Formation ◽  
Ex Situ ◽  
Surface Roughening ◽  
Misfit Dislocations ◽  
Two Dimensional ◽  
Anisotropic Behavior ◽  
Surface Evolution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We have analyzed the anisotropic behavior of surface roughening in Si1−xGex/Si(001) heterostructures by use of methods of elastic analysis of undulated surfaces and perturbation analysis on the basis of global energy variations associated with surface evolution. Both methods have shown that the two-dimensional stage of surface roughening preferentially takes place in the form of ridges aligned along the two orthogonal 〈100〉 type directions. This prediction has been confirmed by ex situ experimental observations of surface evolution by use of atomic force microscopy and transmission electron microscopy in both subcritically and supercritically thick Si1−xGex films grown on Si(001) substrates. Further experiments in supercritically thick films have revealed a remarkable interplay between defect formation and surface evolution: the formation of a network of 〈110〉?misfit dislocations in the latter stages alters the evolution process by rotating the ridge formations toward the 〈110〉 type directions.

Compliance at the GaSb/GaP Interface by Misfit Dislocations Array

2011 ◽  
Vol 324 ◽  
pp. 85-88
Author(s):  
Salim El Kazzi ◽  
Ludovic Desplanque ◽  
Christophe Coinon ◽  
Yi Wang ◽  
Pierrre Ruterana ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Misfit Dislocations ◽  
Initial Growth ◽  
Electron Diffraction Analysis ◽  
High Energy Electron ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

We study the initial growth of 10 monolayers (MLs) of GaSb on a (001) GaP substrate. Transmission electron microscopy and reflection high energy electron diffraction analysis show that an Sb-rich GaP surface promotes the formation of a 90° misfit dislocation array at the epi-substrate interface. Using atomic force microscopy, we investigate the influence of the growth temperature and the growth rate on the formation and the shape of GaSb islands.

MBE Growth of IV-VI Nanowires on a Self-organized Template

2010 ◽  
Vol 1258 ◽  
Author(s):  
Lee Andrew Elizondo ◽  
Patrick McCann ◽  
Joel Keay ◽  
Matthew Johnson
Keyword(s):  
Quantum Wires ◽  
High Energy ◽  
Ex Situ ◽  
Mbe Growth ◽  
One Dimensional ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Low Dimensional

AbstractWe present the experimental results for the first known molecular beam epitaxy (MBE) growth of quasi-one-dimensional PbSe wires on technologically relevant silicon.In this work, we describe the growth and characterization of low-dimensional IV-VI semiconductors as they evolve from one-dimensional dot/dot-chains to one-dimensional structures on a self-organized template epitaxially grown on Si(110). In situ and ex situ characterization were performed at various stages throughout growth by reflection high energy electron diffraction, scanning electron microscopy, and non-contact atomic force microscopy. Initial growths resulted in some preferential alignment of the PbSe dot-chains parallel to the self-organized template in the [-110] direction. By reducing the substrate temperature and increasing the supplemental Se flux, the morphology of dot-chains extend into lengthened one-dimensional structures. This is an important milestone in the fabrication of PbSe quantum wires on technologically relevant silicon.

Dynamics of InAs Quantum Dots Formation on AlAs and GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
M. Yakimov ◽  
V. Tokranov ◽  
S. Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Single Layer ◽  
High Energy ◽  
Ex Situ ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Kinetics Of

AbstractWe have studied the formation of InAs quantum dots (QDs) grown by molecular beam epitaxy on top of GaAs and 2 ML-thick AlAs layers in the temperature range from 350 to 500°C. In-situ reflection high energy electron diffraction (RHEED) patterns were recorded in real time during the growth and analyzed to characterize the 2D-to-3D transition on the surface, including QD formation, and ripening process. The kinetics of QD formation was studied using the InAs growth rates ranging from 0.01 to 1 ML/s and different ratios of As2/In fluxes. RHEED patterns and ex-situ atomic force microscopy images were analyzed to reveal the development of sizes and shapes of the single-layer and stacked QD ensembles. The critical InAs coverage for QD formation was shown to be consistently higher for dots grown on the AlAs overlayer than for those grown on GaAs surface. Self-assembly of multilayer QD stacks revealed the reduction of the critical thickness for dots formed in the upper layers.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

In situ X-ray Scattering Study of the Formation of Au Nano Crystals During Thermal Annealing

2007 ◽  
Vol 1027 ◽  
Author(s):  
Do Young Noh ◽  
Ki-Hyun Ryu ◽  
Hyon Chol Kang
Keyword(s):  
Thermal Annealing ◽  
Bragg Reflection ◽  
Ex Situ ◽  
X Ray ◽  
Force Microscopy ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Au Thin Films ◽  
Ray Scattering

AbstractThe transformation of Au thin films grown on sapphire (0001) substrates into nano crystals during thermal annealing was investigated by in situ synchrotron x-ray scattering and ex situ atomic force microscopy (AFM). By monitoring the Au(111) Bragg reflection and the low Q reflectivity and comparing them with ex situ AFM images, we found that polygonal-shape holes were nucleated and grow initially. As the holes grow larger and contact each other, their boundary turns into Au nano crystals. The Au nano crystals have a well-defined (111) flat top surface and facets in the in-plane direction.

Ex Situ and In Situ Thermal Transformations of M-50 Pitch Revealed by Non-contact Atomic Force Microscopy

2021 ◽  
Author(s):  
Pengcheng Chen ◽  
Jordan N. Metz ◽  
Adam S. Gross ◽  
Stuart E. Smith ◽  
Steven P. Rucker ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Ex Situ ◽  
Thermal Transformations ◽  
Force Microscopy ◽  
Atomic Force
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