MBE Growth of IV-VI Nanowires on a Self-organized Template

2010 ◽  
Vol 1258 ◽  
Author(s):  
Lee Andrew Elizondo ◽  
Patrick McCann ◽  
Joel Keay ◽  
Matthew Johnson
Keyword(s):  
Quantum Wires ◽  
High Energy ◽  
Ex Situ ◽  
Mbe Growth ◽  
One Dimensional ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Low Dimensional

AbstractWe present the experimental results for the first known molecular beam epitaxy (MBE) growth of quasi-one-dimensional PbSe wires on technologically relevant silicon.In this work, we describe the growth and characterization of low-dimensional IV-VI semiconductors as they evolve from one-dimensional dot/dot-chains to one-dimensional structures on a self-organized template epitaxially grown on Si(110). In situ and ex situ characterization were performed at various stages throughout growth by reflection high energy electron diffraction, scanning electron microscopy, and non-contact atomic force microscopy. Initial growths resulted in some preferential alignment of the PbSe dot-chains parallel to the self-organized template in the [-110] direction. By reducing the substrate temperature and increasing the supplemental Se flux, the morphology of dot-chains extend into lengthened one-dimensional structures. This is an important milestone in the fabrication of PbSe quantum wires on technologically relevant silicon.

Well-Ordered Self-Assembly Growth of Strain-Modulated SrTiO3 Thin Films: Templates for Complex Oxide Quantum Wires

2005 ◽  
Vol 475-479 ◽  
pp. 4255-4260 ◽  
Author(s):  
Yan Rong Li ◽  
Jin Long Li ◽  
Ying Zhang ◽  
Xin Wu Deng ◽  
Fan Yang ◽  
...  
Keyword(s):  
Compressive Stress ◽  
Self Assembly ◽  
Quantum Wires ◽  
Complex Oxide ◽  
High Energy ◽  
The Self ◽  
Ex Situ ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

Well-ordered self-assembled SrTiO3 thin film, as a template for complex oxide quantum wires, was fabricated on LaAlO3 (100) single crystal substrates with laser molecular beam epitaxy. The self-assembled growth was in-situ monitored by reflective high energy electron diffraction. The morphology evolutions of the films as a function of thickness were studied by ex-situ atomic force microscopy. As the thickness of the films increased from 3.875nm to 46.5nm gradually, the compressive stress-induced SrTiO3 films exhibited a periodic well-ordered ripple structure, which formed a unique nanoassembled template for the fabrication of quantum wires. Small angle X-ray scattering technique was employed to investigate the structure. Symmetric satellite peaks were discovered, indicating the well-ordered superstructure. In contrast, the similar superstructure was not observed during the growth of the tensile stress-induced LaAlO3 films on SrTiO3 substrates. The Compressive stress was considered as the main reason of the self-assembled growth, and systematical elucidation about strain mechanism was discussed. These results might provide an efficient method for the controllable formation of well-aligned template of quantum wire for complex oxide with desirable structure via proper modulation of strains.

STRUCTURAL AND MAGNETIC PROPERTIES OF EPITAXIAL Ni80Fe20 THIN FILMS ON Cu/Si

1995 ◽  
Vol 02 (04) ◽  
pp. 427-437 ◽  
Author(s):  
I. HASHIM ◽  
H.S. JOO ◽  
H.A. ATWATER
Keyword(s):  
Magnetic Properties ◽  
Domain Walls ◽  
High Energy ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Crystal Films

Single-crystal films of permalloy ( Ni 80 Fe 20) were grown on Cu (001) seed layers oriented epitaxially with Si (001). The microstructural properties were measured using in-situ reflection high-energy electron diffraction, and ex-situ transmission electron microscopy, x-ray diffraction, and atomic force microscopy, whereas the magnetic properties were probed using in-situ magneto-optic Kerr effect and ex-situ vibrating sample magnetometry. Anisotropic magnetoresistance and resistivity for some of the samples were also measured. The coercivity for thinner (≤5 nm) Ni 80 Fe 20 was significantly higher (10–20 Oersteds) than polycrystalline films deposited on SiO 2/ Si , and was also higher than films deposited on lattice-matched Cu x Ni 1–x alloys. These magnetic properties were explained using a theoretical model involving interaction of domain walls with defects such as misfit dislocations and coherent islands, due to the mismatch between Ni 80 Fe 20 and Cu .

Dynamics of InAs Quantum Dots Formation on AlAs and GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
M. Yakimov ◽  
V. Tokranov ◽  
S. Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Single Layer ◽  
High Energy ◽  
Ex Situ ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Kinetics Of

AbstractWe have studied the formation of InAs quantum dots (QDs) grown by molecular beam epitaxy on top of GaAs and 2 ML-thick AlAs layers in the temperature range from 350 to 500°C. In-situ reflection high energy electron diffraction (RHEED) patterns were recorded in real time during the growth and analyzed to characterize the 2D-to-3D transition on the surface, including QD formation, and ripening process. The kinetics of QD formation was studied using the InAs growth rates ranging from 0.01 to 1 ML/s and different ratios of As2/In fluxes. RHEED patterns and ex-situ atomic force microscopy images were analyzed to reveal the development of sizes and shapes of the single-layer and stacked QD ensembles. The critical InAs coverage for QD formation was shown to be consistently higher for dots grown on the AlAs overlayer than for those grown on GaAs surface. Self-assembly of multilayer QD stacks revealed the reduction of the critical thickness for dots formed in the upper layers.

In situ X-ray Scattering Study of the Formation of Au Nano Crystals During Thermal Annealing

2007 ◽  
Vol 1027 ◽  
Author(s):  
Do Young Noh ◽  
Ki-Hyun Ryu ◽  
Hyon Chol Kang
Keyword(s):  
Thermal Annealing ◽  
Bragg Reflection ◽  
Ex Situ ◽  
X Ray ◽  
Force Microscopy ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Au Thin Films ◽  
Ray Scattering

AbstractThe transformation of Au thin films grown on sapphire (0001) substrates into nano crystals during thermal annealing was investigated by in situ synchrotron x-ray scattering and ex situ atomic force microscopy (AFM). By monitoring the Au(111) Bragg reflection and the low Q reflectivity and comparing them with ex situ AFM images, we found that polygonal-shape holes were nucleated and grow initially. As the holes grow larger and contact each other, their boundary turns into Au nano crystals. The Au nano crystals have a well-defined (111) flat top surface and facets in the in-plane direction.

Ex Situ and In Situ Thermal Transformations of M-50 Pitch Revealed by Non-contact Atomic Force Microscopy

2021 ◽  
Author(s):  
Pengcheng Chen ◽  
Jordan N. Metz ◽  
Adam S. Gross ◽  
Stuart E. Smith ◽  
Steven P. Rucker ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Ex Situ ◽  
Thermal Transformations ◽  
Force Microscopy ◽  
Atomic Force

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

scholarly journals In Situ Initial Growth Studies of SrTiO3 on SrTiO3 by Time Resolved High Pressure RHEED

1998 ◽  
Vol 526 ◽  
Author(s):  
Gertjan Koster ◽  
Guus J.H.M. Rijnders ◽  
Dave H.A. Blank ◽  
Horst Rogalla
Keyword(s):  
High Pressure ◽  
Pulsed Laser ◽  
High Energy ◽  
Initial Growth ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures ◽  
Substrate Surfaces

AbstractThe initial growth of pulsed laser deposited SrTiO3 on SrTiO3 has been studied using high pressure Reflection High Energy Electron Diffraction (RHEED) and Atomic Force Microscopy (AFM). For this, we developed a Pulsed Laser Deposition (PLD)-RHEED system, with the possibility to study the growth and to monitor the growth rates, in situ, at typical PLD pressures (10-50 Pa). Using perfect single crystal SrTiO3 substrate surfaces, we observe true 2D intensity oscillations at different temperatures. Simultaneously, information on the diffusion of the deposited material on the surface could be extracted from the relaxation of the intensity after each laser pulse. The characteristic times depend on pressure and temperature as well as the 2D coverage during growth.

Controlling (In, Ga)As quantum structures on high index GaAs surfaces

2004 ◽  
Vol 854 ◽  
Author(s):  
Sh. Seydmohamadi ◽  
H. Wen ◽  
Zh. M. Wang ◽  
G. J. Salamo
Keyword(s):  
Quantum Wires ◽  
High Energy ◽  
High Index ◽  
Quantum Structures ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Stereographic Triangle ◽  
Atomic Force

ABSTRACTWe investigate the formation of (In, Ga)As self assembled quantum structures grown on different orientations of a GaAs substrate along one side of the stereographic triangle between (100) and (111)A surfaces. The samples were grown by Molecular Beam Epitaxy, monitored by Reflection High-Energy Electron Diffraction during the growth and characterized by in-situ Scanning Tunneling Microscopy and Atomic Force Microscopy. A systematic transition from zero dimensional (In, Ga)As quantum dots to one dimensional quantum wires was observed as the substrate was varied along the side of the triangle within 25° miscut from the (100) toward (111)A, which includes several high index surfaces. We propose an explanation for the role of the substrate in determining the type of the nanostructure that is formed.

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