NOISE REDUCTION IN TERAHERTZ THIN FILM MEASUREMENTS USING A DOUBLE MODULATED DIFFERENTIAL TECHNIQUE

2002 ◽  
Vol 02 (01) ◽  
pp. R13-R28 ◽  
Author(s):  
SAMUEL P. MICKAN ◽  
DEREK ABBOTT ◽  
JESPER MUNCH ◽  
X.-C. ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Noise Reduction ◽  
Time Domain ◽  
Noise Levels ◽  
Differential Technique ◽  
Thin Film Characterization ◽  
Double Modulation

Differential terahertz (THz) time-domain spectroscopy (TDS) is a technique for decreasing noise levels in THz thin film characterization experiments. Characterizing thin films in the GHz to THz range is critical for the development of fast integrated circuits and photonic systems, and is potentially applicable to biosensors and proteomics. This paper shows how the differential technique, combined with double modulation, enables the study of thin films with noise reduction over normal TDS that improves at the film gets thinner. Double modulated differential THz-TDS has enabled the characterization of films with less than 1-μm thickness.

Thin film characterization using terahertz differential time-domain spectroscopy and double modulation

2001 ◽  
Author(s):  
Samuel P. Mickan ◽  
Kwang-Su Lee ◽  
Toh-Ming Lu ◽  
Edward Barnat ◽  
Jesper Munch ◽  
...  
Keyword(s):  
Thin Film ◽  
Time Domain ◽  
Time Domain Spectroscopy ◽  
Thin Film Characterization ◽  
Double Modulation

Investigation of the physical, optical, and chemical properties of phase segregated AlCoOx thin films from a novel hexol-type cluster

2021 ◽  
Author(s):  
Jordan D. Levine ◽  
Meredith C. Sharps ◽  
Elizabeth A. Cochran ◽  
David A. Marsh ◽  
William H. Casey ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Oxide Film ◽  
Metal Oxide ◽  
Chemical Properties ◽  
Mixed Metal Oxide ◽  
Thin Film Characterization ◽  
Metal Oxide Film ◽  
And Chemical Properties

We report the fabrication and thin film characterization of an aluminum and cobalt mixed metal–oxide film that has been solution deposited from a novel hexol-type inorganic cluster.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

scholarly journals Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

2019 ◽  
Vol 26 (5) ◽  
pp. 1600-1611 ◽  
Author(s):  
Gihan Kwon ◽  
Yeong-Ho Cho ◽  
Ki-Bum Kim ◽  
Jonathan D. Emery ◽  
In Soo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Cell ◽  
Porous Electrode ◽  
High Energy ◽  
Porous Electrodes ◽  
X Ray ◽  
Pdf Analysis ◽  
Thin Film Catalysts

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Thin-Film Characterization of Neutral π-Associated Assemblies Incorporating Putative Pseudo-Rotaxanes

Langmuir ◽  
1999 ◽  
Vol 15 (17) ◽  
pp. 5600-5605 ◽  
Author(s):  
Daniel E. Lynch ◽  
Darren G. Hamilton ◽  
Nicolas J. Calos ◽  
Barry Wood ◽  
Jeremy K. M. Sanders
Keyword(s):  
Thin Film ◽  
Thin Film Characterization
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