Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

We report the application of graphene oxide (GO) as the active layer of memory devices. The indium-tin-oxide/GO/Al devices present the ternary write-once-read-many times resistive switching memory, and retain the data information for [Formula: see text][Formula: see text]s. In the OFF states, the [Formula: see text]–[Formula: see text] characteristics in the applied voltage dominantly followed the space-charge-limited-current behaviors. The intermediate resistance state was attributed to the thermionic emission mechanism. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.

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Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2912502 ◽

2019 ◽

Vol 66 (6) ◽

pp. 2595-2599 ◽

Cited By ~ 1

Author(s):

Chun-Chu Lin ◽

Po-Hsun Chen ◽

Min-Chen Chen ◽

Ting-Chang Chang ◽

Chih-Yang Lin ◽

...

Keyword(s):

Resistive Switching ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Resistive Switching Memory ◽

Gadolinium Doping ◽

Switching Memory

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Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽

10.1039/c7nr01840a ◽

2017 ◽

Vol 9 (40) ◽

pp. 15314-15322 ◽

Cited By ~ 13

Author(s):

Se-I Oh ◽

Janardhanan R. Rani ◽

Sung-Min Hong ◽

Jae-Hyung Jang

Keyword(s):

Graphene Oxide ◽

Iron Oxide ◽

Resistive Switching ◽

Bipolar Resistive Switching ◽

Solution Processed ◽

Resistive Switching Memory ◽

Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

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Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices

Carbohydrate Polymers ◽

10.1016/j.carbpol.2019.03.040 ◽

2019 ◽

Vol 214 ◽

pp. 213-220 ◽

Cited By ~ 14

Author(s):

Tao Liu ◽

Wei Wu ◽

Kai-Ning Liao ◽

Qijun Sun ◽

Xianjing Gong ◽

...

Keyword(s):

Graphene Oxide ◽

Resistive Switching ◽

Carboxymethyl Cellulose ◽

Memory Devices ◽

Resistive Switching Memory ◽

Switching Memory

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Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽

10.1557/adv.2018.72 ◽

2018 ◽

Vol 3 (33) ◽

pp. 1943-1948 ◽

Cited By ~ 3

Author(s):

C. Strobel ◽

T. Sandner ◽

S. Strehle

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Tin Oxide ◽

Bottom Electrode ◽

Low Cost ◽

Memory Devices ◽

Neuromorphic Computing ◽

Resistive Switching Memory ◽

Switching Behaviour ◽

Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

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