Review on bimetallic catalysts for electrocatalytic denitrification

Author(s):  
Zehui Bai ◽  
Zixuan Tang ◽  
Bin Zhang ◽  
Shengming Jin ◽  
Jianlong Xu ◽  
...  

Accelerated industrialization disrupts the global nitrogen cycle, resulting in alarmingly increased nitrate in groundwater and other water bodies. Electrocatalytic nitrate reduction (NO3RR) with high automation can effectively remove nitrate from polluted water, thus avoiding nitrate accumulation. However, the sluggish cathode reaction kinetics severely hampered the efficiency of NO3RR. Developing high-performance cathode catalysts is of great significance for boosting NO3RR. Compared with pure metal catalysts, bimetal catalysts can further improve the cathode activity and selectivity to nitrogen or ammonia in the electrocatalytic process, attracting extensive research interest. In this review, we discussed the background of denitrification requirements and the development status of bimetallic denitrification catalyst. Metallic cathode catalysts, such as noble-metal, 3d transition metal, main group metal, are described emphatically. Finally, present challenges and future outlook on bimetallic denitrification catalysts are depicted.

Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.


ACS Catalysis ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 11743-11752 ◽  
Author(s):  
Yingge Cong ◽  
Qi Tang ◽  
Xiyang Wang ◽  
Milan Liu ◽  
Jinghai Liu ◽  
...  

2015 ◽  
Vol 3 (7) ◽  
pp. 3450-3455 ◽  
Author(s):  
Wei Wu ◽  
Mei Lei ◽  
Shuanglei Yang ◽  
Li Zhou ◽  
Li Liu ◽  
...  

Copper-based alloy nanoparticles (NPs) have recently triggered much research interest for the development of low-cost and high-performance bimetallic catalysts that have industrial applications.


2012 ◽  
Vol 69 (5) ◽  
pp. 250-250
Author(s):  
Shigeki KUROKI ◽  
Masayuki CHOKAI ◽  
Libin WU ◽  
Yuta NABAE ◽  
Masa-aki KAKIMOTO ◽  
...  

Author(s):  
Stefan Kraft ◽  
M. Collon ◽  
R. Günther ◽  
R. Partapsing ◽  
M. Beijersbergen ◽  
...  

2015 ◽  
Author(s):  
Yong Wang ◽  
Jun Liu ◽  
Yuyan Shao ◽  
Yingwen Cheng ◽  
Rodney L. Borup ◽  
...  

2020 ◽  
Vol 8 (3) ◽  
pp. 1113-1119 ◽  
Author(s):  
Zhangxun Xia ◽  
Xinlong Xu ◽  
Xiaoming Zhang ◽  
Huanqiao Li ◽  
Suli Wang ◽  
...  

Direct methanol fuel cells (DMFCs) have drawn extensive interest for the past two decades both in scientific research and industrial engineering circles for their advantages of high energy density, environmental friendliness, and easy fuel handling.


2017 ◽  
Vol 2017 (1) ◽  
pp. 000715-000720 ◽  
Author(s):  
Masahiro Kyozuka ◽  
Takahiko Kiso ◽  
Hiroki Toyazaki ◽  
Koichi Tanaka ◽  
Tetsuya Koyama

Abstract As mobility products, such as smart phones, tablets and wearable devices, continue on the paths of both miniaturization and high performance, components and packaging are likewise driven to become smaller and thinner. In mobile devices, a thinner package is required, especially for the Application Processor and memory combination. The Package-on-Package structure can achieve module thinness by embedding a die (or dies) into a package and is thus attractive for reducing the height of an AP. The Die-Embedded and RDL structure has been in development as a package corresponding to POP structure. This structure has two characteristics of manufacturing method, based on the substrate manufacturing process. One is the RDL-first process, whereby the RDL is manufactured before die attachment. This process decreases the die loss from defects in the RDL formation. The other method is to manufacture the packages in panel form instead of wafer form. The key features of this structure are panel-form manufacturing and via connection between the substrate and the top-RDL. In IMAPS 2016, the Die Embedded and RDL structure on i-THOP®, which was used as the substrate was reported. The die-to-die inter connection was fabricated on i-THOP® for a 2.1D application. Both the die attachment and the RDL formation were successfully performed. The reliability tests proceeded. The results indicated that the i-THOP® with the Die Embedded and RDL structure can be applied to packaging of AP in mobile devices. The next challenge is to make a smaller package using the Die Embedded and RDL structure. To decrease the package area, a finer-pitch via connection that was less than the design rule of 200μm was evaluated. For reduction of package thickness, a thinner substrate, approximately 160μm thickness, was applied. The new test sample with these improvements was designed and proceeded to evaluation. The dimensions of the sample are 15 × 15 mm2 size and 340μm thickness (without solder ball), a 100μm-thick die was embedded and a one-layer of RDL was formed on the die. In this development, the warpage of the thin substrate after die attachment might be large, so there is an issue of package warpage and the handling of a thin substrate. In this report, results of low warpage structure design and development status of fine via connection formation are described.


2016 ◽  
Vol 27 (13) ◽  
pp. 135703 ◽  
Author(s):  
Y L Cao ◽  
F C Lv ◽  
S C Yu ◽  
J Xu ◽  
X Yang ◽  
...  

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