scholarly journals Vapor transport deposition of Sb2Se3 thin films for photodetector application

2020 ◽  
Vol 10 (04) ◽  
pp. 2050016
Author(s):  
Sen Wen ◽  
Xingtian Yin ◽  
Haixia Xie ◽  
Yuxiao Guo ◽  
Jie Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Temperature ◽  
Optoelectronic Devices ◽  
Vapor Transport ◽  
Film Morphology ◽  
Maximum Value ◽  
Application Potential ◽  
Antimony Selenide ◽  
Vapor Transport Deposition

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.

scholarly journals Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Xixing Wen ◽  
Chao Chen ◽  
Shuaicheng Lu ◽  
Kanghua Li ◽  
Rokas Kondrotas ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vapor Transport ◽  
Thin Film Solar Cells ◽  
Antimony Selenide ◽  
Selenide Thin Film ◽  
Vapor Transport Deposition

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

Sb 2 (Se 1‐x S x ) 3 Thin‐Film Solar Cells Fabricated by Single‐Source Vapor Transport Deposition

Solar RRL ◽  
2019 ◽  
Vol 3 (4) ◽  
pp. 1800280 ◽  
Author(s):  
Shuaicheng Lu ◽  
Yang Zhao ◽  
Xixing Wen ◽  
Ding‐Jiang Xue ◽  
Chao Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vapor Transport ◽  
Thin Film Solar Cells ◽  
Single Source ◽  
Vapor Transport Deposition

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

scholarly journals High-Speed Vapor Transport Deposition of Perovskite Thin Films

2019 ◽  
Vol 11 (36) ◽  
pp. 32928-32936 ◽  
Author(s):  
Maximilian T. Hoerantner ◽  
Ella L. Wassweiler ◽  
Haomiao Zhang ◽  
Anurag Panda ◽  
Michel Nasilowski ◽  
...  
Keyword(s):  
Thin Films ◽  
High Speed ◽  
Vapor Transport ◽  
Vapor Transport Deposition

Chemically Deposited Silver Antimony Selenide Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1165 ◽  
Author(s):  
Jorge G. Garza ◽  
Sadasivan Shaji ◽  
Ana Maria Arato Tovar ◽  
Eduardo Perez Tijerina ◽  
Alan Castillo Roderiguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Close Contact ◽  
Optical Transmittance ◽  
Halogen Lamp ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Antimony Selenide

AbstractSilver antimony selenide (AgSbSe2) thin films were prepared by heating sequentially deposited antimony sulphide (Sb2S3), silver selenide (Ag2Se) and Ag thin films in close contact with a selenium thin film. Sb2S3 thin film was prepared from chemical bath containing SbCl3 and Na2S2O3, Ag2Se from the bath containing AgNO3 and Na2SeSO3 and Se thin films from an acidified solution of Na2SeSO3, at room temperature on cleaned glass substrates. Ag thin film was deposited by vacuum thermal evaporation. The annealing temperature was varied from 300-390°C in vacuum (∼10−3 Torr) for 1 h. X-ray diffraction analysis showed the films formed at 350 °C was polycrystalline AgSb(S,Se)2 or AgSbSe2 depending on selenium thin film thickness. Morphology of these films was analyzed using Atomic Force Microscopy and Scanning Electron Microscopy. The elemental analysis was done using Energy Dispersive X-ray technique. Optical characterization of the thin films was done by optical transmittance spectra. The electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: Glass/ITO/CdS/AgSbSe2/Ag was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this PV structure showed Voc=370 mV and Jsc=0.5 mA/cm2 under illumination using a tungsten halogen lamp.

Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated silicon nitride thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (81) ◽  
pp. 77440-77451 ◽  
Author(s):  
M. A. Serrano-Núñez ◽  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Deposition Temperature ◽  
Post Deposition Annealing ◽  
Silicon Quantum Dots ◽  
Film Composition ◽  
Annealing Temperatures ◽  
Post Deposition

The photoluminescence (PL) evolution of SiQDs respect deposition and annealing temperatures is studied in a combined manner. The PL identified changes are associated to changes in thin film composition. 150 °C is identified as an important threshold.

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