Adjustment of Bubble Collapse Field of Garnet Films by Chemical Etching

1975 ◽  
Vol 14 (9) ◽  
pp. 1421-1422 ◽  
Author(s):  
Toshiaki Kasai
Keyword(s):  
Chemical Etching ◽  
Bubble Collapse ◽  
Garnet Films

Effect of in‐plane magnetic field on bubble collapse field in ion‐implanted garnet films

1977 ◽  
Vol 48 (6) ◽  
pp. 2604-2607 ◽  
Author(s):  
H. Uchishiba ◽  
T. Obokata ◽  
K. Asama
Keyword(s):  
Magnetic Field ◽  
Bubble Collapse ◽  
Garnet Films ◽  
Ion Implanted

Novel magneto-optical recording materials: Bi-substituted garnet films

1991 ◽  
Vol 49 ◽  
pp. 776-777
Author(s):  
Takao Suzuki ◽  
Hossein Nuri
Keyword(s):  
Grain Size ◽  
Amorphous Film ◽  
Nitrogen Atmosphere ◽  
Optical Recording ◽  
Garnet Film ◽  
Media Noise ◽  
Garnet Films ◽  
Order Of Magnitude ◽  
A New Technique ◽  
A Current

For future high density magneto-optical recording materials, a Bi-substituted garnet film ((BiDy)3(FeGa)5O12) is an attractive candidate since it has strong magneto-optic effect at short wavelengths less than 600 nm. The signal in read back performance at 500 nm using a garnet film can be an order of magnitude higher than a current rare earth-transition metal amorphous film. However, the granularity and surface roughness of such crystalline garnet films are the key to control for minimizing media noise.We have demonstrated a new technique to fabricate a garnet film which has much smaller grain size and smoother surfaces than those annealed in a conventional oven. This method employs a high ramp-up rate annealing (Γ = 50 ~ 100 C/s) in nitrogen atmosphere. Fig.1 shows a typical microstruture of a Bi-susbtituted garnet film deposited by r.f. sputtering and then subsequently crystallized by a rapid thermal annealing technique at Γ = 50 C/s at 650 °C for 2 min. The structure is a single phase of garnet, and a grain size is about 300A.

The observation of defects on (100) CdTe surfaces by chemical etching

1992 ◽  
Vol 50 (2) ◽  
pp. 1424-1425
Author(s):  
M.E. Lee
Keyword(s):  
Single Crystal ◽  
Grain Boundaries ◽  
Single Crystals ◽  
Chemical Etching ◽  
Crystalline Perfection ◽  
Crystalline Defects ◽  
High Incidence ◽  
Crystallographic Defects ◽  
Cdznte Substrates ◽  
Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

Metal-Assisted Plasma Etching of Silicon: A Liquid-Free Alternative to MACE

2018 ◽  
Author(s):  
Julia Sun ◽  
Benjamin Almquist
Keyword(s):  
Liquid Phase ◽  
Plasma Etching ◽  
Chemical Etching ◽  
Gold Films ◽  
Metallic Films ◽  
Au Catalyst ◽  
Feed Concentration ◽  
Catalytic Activities ◽  
Metal Assisted Chemical Etching ◽  
Complex Nanostructures

For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. Of these, two of the most common are reactive ion etching in the gaseous phase and metal-assisted chemical etching (MACE) in the liquid phase. Though these two methods are highly established and characterized, there is a surprising scarcity of reports exploring the ability of metallic films to catalytically enhance the etching of silicon in dry plasmas via a MACE-like mechanism. Here, we discuss a <u>m</u>etal-<u>a</u>ssisted <u>p</u>lasma <u>e</u>tch (MAPE) performed using patterned gold films to catalyze the etching of silicon in an SF<sub>6</sub>/O<sub>2</sub> mixed plasma, selectively increasing the rate of etching by over 1000%. The degree of enhancement as a function of Au catalyst configuration and relative oxygen feed concentration is characterized, along with the catalytic activities of other common MACE metals including Ag, Pt, and Cu. Finally, methods of controlling the etch process are briefly explored to demonstrate the potential for use as a liquid-free fabrication strategy.

Fine MCP Decapsulation Technology Development

2006 ◽  
Author(s):  
Jianwei Zhou ◽  
Wei Zheng ◽  
Taekoo Lee
Keyword(s):  
Chemical Etching ◽  
Etch Rate ◽  
Technology Development ◽  
New Technology ◽  
Ammonium Hydroxide ◽  
Mechanical Polishing ◽  
Technology Process ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Die Surface

Abstract Multi-Chip Package (MCP) decapsulation is now becoming a rising problem. Because for traditional decapsulation method, acid can’t dissolve the top silicon die to expose the bottom die surface in MCP. It makes inspecting the bottom die in MCP is difficult. In this paper, a new MCP decapsulation technology combining mechanical polishing with chemical etching is introduced. This new technology can remove the top die quickly without damaging the bottom die using KOH and Tetra-Methyl Ammonium Hydroxide (TMAH). The technology process and relative application are presented. The factors that affect the KOH and TMAH etch rate are studied. The usage difference between the two etchant is discussed.

Sign in / Sign up

Export Citation Format

Share Document