Damage Formed by Plasma Boron Doping in Silicon

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5608-5611
Author(s):  
Tohru Hara ◽  
Kiyotaka Shinada ◽  
Shigeaki Nakamura
Keyword(s):  
Boron Doping

Enhanced red emission and improved thermal quenching of CaAlSiN 3 :Eu 2+ phosphors via boron doping

2021 ◽  
Author(s):  
Xiangyu Lu ◽  
Hailong Yuan ◽  
Zhifeng Huang ◽  
Yujuan Zhou ◽  
Fei Chen ◽  
...  
Keyword(s):  
Thermal Quenching ◽  
Boron Doping ◽  
Red Emission

Improved performance of silicon heterojunction solar cells via 3× three-step boron-doping

2020 ◽  
Vol 128 (4) ◽  
pp. 045309
Author(s):  
Zhenfei Li ◽  
Liping Zhang ◽  
Zhuopeng Wu ◽  
Wenzhu Liu ◽  
Renfang Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Boron Doping ◽  
Heterojunction Solar Cells ◽  
Improved Performance ◽  
Silicon Heterojunction Solar Cells

Boron doping of silicon by plasma source ion implantation

1997 ◽  
Vol 93 (2-3) ◽  
pp. 247-253 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
D.P. Brunco ◽  
S.B. Felch ◽  
B.S. Lee
Keyword(s):  
Ion Implantation ◽  
Boron Doping ◽  
Plasma Source ◽  
Plasma Source Ion Implantation

The influence of boron doping on the structure and characteristics of diamond thin films

1997 ◽  
Vol 6 (2-4) ◽  
pp. 521-525 ◽  
Author(s):  
X.Z. Liao ◽  
R.J. Zhang ◽  
C.S. Lee ◽  
S.Tong Lee ◽  
Y.W. Lam
Keyword(s):  
Thin Films ◽  
Boron Doping ◽  
Diamond Thin Films

BiVO4hollow microplates: controlled synthesis and enhanced photocatalytic activity achieved through one-step boron doping and Co(OH)2loading

CrystEngComm ◽  
2017 ◽  
Vol 19 (42) ◽  
pp. 6305-6313 ◽  
Author(s):  
Abraham Adenle ◽  
De-Kun Ma ◽  
De-Peng Qu ◽  
Wei Chen ◽  
Shaoming Huang
Keyword(s):  
Photocatalytic Activity ◽  
Boron Doping ◽  
Controlled Synthesis ◽  
One Step

BiVO4hollow microplates co-modified by boron doping and Co(OH)2nanoparticle loading achieved enhanced photocatalytic activity.

Temperature-dependent site selection of boron doping in chemically derived graphene

Carbon ◽  
2021 ◽  
Author(s):  
Saikat Sarkar ◽  
Rajarshi Roy ◽  
Bikram Kumar Das ◽  
Kalyan Kumar Chattopadhyay
Keyword(s):  
Site Selection ◽  
Boron Doping ◽  
Temperature Dependent ◽  
Dependent Site ◽  
Selection Of

scholarly journals The mechanism and process of spontaneous boron doping in graphene in the theoretical perspective

2016 ◽  
Vol 380 (41) ◽  
pp. 3384-3388 ◽  
Author(s):  
Xiaohui Deng ◽  
Jing Zeng ◽  
Mingsu Si ◽  
Wei Lu
Keyword(s):  
Theoretical Perspective ◽  
Boron Doping

Phosphorus and Boron Doping of Silicon Thin Films Using ArF Excimer Laser

1991 ◽  
Vol 236 ◽  
Author(s):  
A. Slaoui ◽  
M. Elliq ◽  
H. Pattyn ◽  
E. Fogarassy ◽  
S. De Unamuno ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Excimer Laser ◽  
Silicon Film ◽  
Boron Doping ◽  
Electrical Characteristics ◽  
Silicon Thin Films ◽  
Shallow Junctions ◽  
Doping Technique ◽  
Arf Excimer Laser ◽  
B Doping

AbstractThis work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.

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