Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal $\bf N_{2}O$ Annealing
1994 ◽
Vol 33
(Part 2, No. 7A)
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pp. L916-L917
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Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 7A)
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pp. 4225-4229
Keyword(s):
1992 ◽
Vol 31
(Part 1, No. 9A)
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pp. 2651-2655
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2018 ◽
Vol 57
(6S1)
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pp. 06HD03
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Keyword(s):
2020 ◽
Vol 8
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pp. 9-14
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2007 ◽
Vol 46
(4B)
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pp. 2054-2057
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