Surface Acoustic Wave Properties of Lithium Tantalate Films Grown by Pulsed Laser Deposition

The influence of sensitive porous films obtained by pulsed laser deposition (PLD) on the response of surface acoustic wave (SAW) sensors on hydrogen at room temperature (RT) was studied. Monolayer films of TiO2 and bilayer films of Pd/TiO2 were deposited on the quartz substrates of SAW sensors. By varying the oxygen and argon pressure in the PLD deposition chamber, different morphologies of the sensitive films were obtained, which were analyzed based on scanning electron microscopy (SEM) images. SAW sensors were realized with different porosity degrees, and these were tested at different hydrogen concentrations. It has been confirmed that the high porosity of the film and the bilayer structure leads to a higher frequency shift and allow the possibility to make tests at lower concentrations. Thus, the best sensor, Pd-1500/TiO2-600, with the deposition pressure of 600 mTorr for TiO2 and 1500 mTorr for Pd, had a frequency shift of 1.8 kHz at 2% hydrogen concentration, a sensitivity of 0.10 Hz/ppm and a limit of detection (LOD) of 1210 ppm. SAW sensors based on such porous films allow the detection of hydrogen but also of other gases at RT, and by PLD method such sensitive porous and nanostructured films can be easily developed.

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Growth ofc-Axis-Oriented LiNbO3Films on ZnO/SiO2/Si Substrate by Pulsed Laser Deposition for Surface Acoustic Wave Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.4056 ◽

2008 ◽

Vol 47 (5) ◽

pp. 4056-4059 ◽

Cited By ~ 13

Author(s):

Wen-Ching Shih ◽

Tzyy-Long Wang ◽

Xiao-Yun Sun ◽

Mu-Shiang Wu

Keyword(s):

Acoustic Wave ◽

Pulsed Laser Deposition ◽

Surface Acoustic Wave ◽

Pulsed Laser ◽

Laser Deposition ◽

Si Substrate

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Pulsed laser deposition of La0.67Ca0.33MnO3 thin films on LiNbO3 and surface acoustic wave studies

Thin Solid Films ◽

10.1016/j.tsf.2005.12.165 ◽

2006 ◽

Vol 510 (1-2) ◽

pp. 77-81 ◽

Cited By ~ 1

Author(s):

Andreas Heinrich ◽

Andreas L. Hörner ◽

Achim Wixforth ◽

Bernd Stritzker

Keyword(s):

Thin Films ◽

Acoustic Wave ◽

Pulsed Laser Deposition ◽

Surface Acoustic Wave ◽

Pulsed Laser ◽

Laser Deposition

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Growth of C-Axis Oriented LiNbO3Film on Sapphire by Pulsed Laser Deposition for Surface Acoustic Wave Applications

Ferroelectrics ◽

10.1080/00150190902869715 ◽

2009 ◽

Vol 381 (1) ◽

pp. 92-99 ◽

Cited By ~ 4

Author(s):

Wen-Ching Shih ◽

Xiao-Yun Sun ◽

Tzyy-Long Wang ◽

Mu-Shiang Wu

Keyword(s):

Acoustic Wave ◽

Pulsed Laser Deposition ◽

Surface Acoustic Wave ◽

Pulsed Laser ◽

Laser Deposition

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Pulsed laser deposition of piezoelectric ZnO thin films for bulk acoustic wave devices

Applied Surface Science ◽

10.1016/j.apsusc.2013.10.075 ◽

2014 ◽

Vol 288 ◽

pp. 572-578 ◽

Cited By ~ 28

Author(s):

Rafik Serhane ◽

Samira Abdelli-Messaci ◽

Slimane Lafane ◽

Hammouche Khales ◽

Walid Aouimeur ◽

...

Keyword(s):

Thin Films ◽

Acoustic Wave ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Bulk Acoustic Wave ◽

Zno Thin Films ◽

Acoustic Wave Devices

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INFLUENCE OF SUBSTRATE TEMPERATURE ON TRANSFORMATION OF PREFERRED ORIENTATIONS IN AlN FILMS

Modern Physics Letters B ◽

10.1142/s0217984905010384 ◽

2005 ◽

Vol 19 (30) ◽

pp. 1775-1782 ◽

Cited By ~ 1

Author(s):

HONG-YU LIU ◽

XUE-MING MA ◽

WANG-ZHOU SHI

Keyword(s):

Acoustic Wave ◽

Substrate Temperature ◽

Surface Acoustic Wave ◽

Room Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Silicon Substrates ◽

Saw Devices ◽

Influence Of Substrate ◽

Substrate Temperatures

Polycrystalline aluminium nitride (AlN) films were deposited on silicon substrates by pulsed laser deposition (PLD) at a substrate temperature in the range room temperature (RT)-800° C . Films grown on Si (111) substrates feature (002) and (110) preferred orientations at substrate temperatures below 400°C and above 600°C, respectively. Films morphology is good enough for surface acoustic wave (SAW) devices. The mechanism for formation and transformation of different preferred orientations in AlN films is discussed.

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Structural surface wave properties of amorphous Bi2Te3 by pulsed laser deposition in the visible and near-infrared regions

AIP Advances ◽

10.1063/1.5031219 ◽

2018 ◽

Vol 8 (6) ◽

pp. 065324 ◽

Cited By ~ 1

Author(s):

Zhen Chai ◽

Xiaoyong Hu ◽

Yifan Zhao ◽

You Wu ◽

Shufang Wang ◽

...

Keyword(s):

Surface Wave ◽

Pulsed Laser Deposition ◽

Near Infrared ◽

Pulsed Laser ◽

Laser Deposition ◽

Structural Surface ◽

Wave Properties

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Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100148022 ◽

1993 ◽

Vol 51 ◽

pp. 438-439

Author(s):

Michael P. Mallamaci ◽

James Bentley ◽

C. Barry Carter

Keyword(s):

Liquid Phase ◽

Single Crystal ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ceramic Materials ◽

Laser Deposition ◽

Triple Junctions ◽

Ion Milling ◽

Multicomponent Oxides ◽

Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

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