A Novel and Highly Sensitive Gas Flow Sensor Using a Hot Spot on $\bf YBa_{2}Cu_{3}O_{7-{\ninmbi \delta}}$ Thin Films

1995 ◽  
Vol 34 (Part 2, No. 10A) ◽  
pp. L1311-L1313 ◽  
Author(s):  
Kei Kikuchi ◽  
Motoi Kanzaki ◽  
Tokudai Neda ◽  
Takehiko Kondo ◽  
Masasuke Takata
2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.


2013 ◽  
Vol 22 ◽  
pp. 9-21 ◽  
Author(s):  
Chii Rong Yang ◽  
Tun Ping Teng ◽  
Yun Yu Yeh

In this study, we successfully combined RF magnetron sputtering of a pure Ti metal target and one-stage oxidation process with a wider oxygen ratio (10%-90%) and total sputtering flow rate (16-24 sccm) to produce TiO2thin films on a glass substrate. The crystallization, morphology, roughness, and thickness of the thin films were examined using XRD, HR-FESEM, AFM, and a profilometer. Subsequently, the photocatalytic performance was examined using a spectrometer and video tensiometer. The experimental results show that the TiO2thin films with a majority of anatase and higher roughness exhibit superior photocatalytic performance; the total sputtering gas flow rate of 18 sccm and oxygen content at 10% is the optimal option. Finally, an empirical formula to correlate the film thickness with deposition time was conducted for the sputtering flow rate of 18 sccm and the oxygen content of 10%.


2010 ◽  
Vol 645-648 ◽  
pp. 255-258 ◽  
Author(s):  
Nicolò Piluso ◽  
Andrea Severino ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Canino ◽  
...  

Raman microscopy has been used to study transport properties in hetero-epitaxial 3C-SiC/Si thin films. By an accurate analysis of the Longitudinal Optic phonon-plasmon coupled (LOPC) modes in n-type doped 3C-SiC films, free carrier density and mobility has been determined. A study of doped 3C-SiC reveals a strong relationship between the calculated free carrier density and both the C/Si ratio used during the epitaxial process and Silicon substrates orientation on which 3C-SiC thin films were grown (maintaining the N2 gas flow rate). The free carrier density obtained is in the range between 5x1016 cm-3 and 4x1018 cm-3. Epitaxial films grown on (111) Si substrates show a higher free carrier density and a lower dependence on C/Si ratios as compared to films grown on (100) Si substrates.


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