Leakage Current Reduction of Chemical-Vapor-Deposited Ta2O5Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application

1999 ◽  
Vol 38 (Part 1, No. 4A) ◽  
pp. 1927-1931 ◽  
Author(s):  
Mark Lin ◽  
Chun-Yen Chang ◽  
Tiao-Yuan Huang ◽  
Win-Yi Shieh
Keyword(s):  
Leakage Current ◽  
Polycrystalline Silicon ◽  
Random Access ◽  
Chemical Vapor ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Chemical Vapor Deposited ◽  
Current Reduction

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

1999 ◽  
Vol 46 (5) ◽  
pp. 940-946 ◽  
Author(s):  
Daewon Ha ◽  
Changhyun Cho ◽  
Dongwon Shin ◽  
Gwan-Hyeob Koh ◽  
Tae-Young Chung ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

The Effect of Grain Boundary on Electrical Characteristics in the Source and Drain Regions of Polycrystalline Silicon Based in One Transistor Dynamic Random Access Memory

2021 ◽  
Vol 21 (8) ◽  
pp. 4258-4267
Author(s):  
Hee Dae An ◽  
Min Su Cho ◽  
Hye Jin Mun ◽  
Sang Ho Lee ◽  
Jin Park ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Semiconductor Device ◽  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Depletion Region ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Drain Region ◽  
Silicon Based

In this paper, we present a capacitorless one transistor dynamic random access memory (1T-DRAM) based on a polycrystalline silicon (poly-Si) double gate MOSFET with grain boundaries (GBs). Several studies have been conducted to implement 1T-DRAM using poly-Si. This is because poly-Si has the advantage of low-cost fabrication and can be stacked. However, poly-Si has GBs, which can adversely affect semiconductor device. So far, related studies on poly-Si-based 1T-DRAM have only focused on GBs present in the channel domain. Hence, in this study, we analyzed the transfer and memory characteristics when a GB is present in the source and drain regions. As a result, we found that in the center of the depletion region in the source and channel junction, where the effect of GB was most significant, sensing margins decreased the most from 0.88 to 0.29 μA/μm, and retention time (RT) decreased from 85 ms to 47 μs. In addition, we found that at the center of the depletion region in the drain and channel junction, where the effect of GBs was most significant in the drain region, RT decreased the most from 85 ms to 52 μs.

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