Effect of Heat Budget After Capacitor Formation on the Leakage Current Characteristics of ZrO2-Based High-k Dielectrics for Next-Generation Dynamic Random-Access Memory Capacitors

2020 ◽  
Vol 20 (1) ◽  
pp. 367-372 ◽  
Author(s):  
Jong-Min Lee ◽  
Pyung-Ho Choi ◽  
Jong-Beom Seo ◽  
Byoung-Deog Choi
Keyword(s):  
Leakage Current ◽  
Heat Budget ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Next Generation ◽  
Access Memory ◽  
High K ◽  
Current Characteristics

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

1999 ◽  
Vol 46 (5) ◽  
pp. 940-946 ◽  
Author(s):  
Daewon Ha ◽  
Changhyun Cho ◽  
Dongwon Shin ◽  
Gwan-Hyeob Koh ◽  
Tae-Young Chung ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Analysis of DRAM Standby Current Failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor

2005 ◽  
Author(s):  
M. H. Cho ◽  
Y. I. Kim ◽  
J. Choi ◽  
D. S. Woo ◽  
K. P. Lee ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Source ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Hot Electron ◽  
Access Memory ◽  
Hot Carrier ◽  
Pmos Transistor ◽  
Hot Carrier Degradation

Abstract A standby current failure of the 80nm design-ruled Dynamic Random Access Memory (DRAM) during burn-in stress was investigated. In our case, hot electron induced punch-through (HEIP) of a PMOS transistor was a leakage current source. The bake test is a useful method to identify the mechanism of a standby current failure due to hot carrier degradation.

Field‐Induced Ferroelectric Hf 1‐ x Zr x O 2 Thin Films for High‐ k Dynamic Random Access Memory

2020 ◽  
Vol 6 (11) ◽  
pp. 2000631
Author(s):  
Seung Dam Hyun ◽  
Hyeon Woo Park ◽  
Min Hyuk Park ◽  
Young Hwan Lee ◽  
Yong Bin Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
High K

Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors

2018 ◽  
Vol 655 ◽  
pp. 48-53 ◽  
Author(s):  
Takashi Onaya ◽  
Toshihide Nabatame ◽  
Tomomi Sawada ◽  
Kazunori Kurishima ◽  
Naomi Sawamoto ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory

CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FB08 ◽  
Author(s):  
Eugenio Dentoni Litta ◽  
Romain Ritzenthaler ◽  
Tom Schram ◽  
Alessio Spessot ◽  
Barry O’Sullivan ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Metal Gate ◽  
High K
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