Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition
2001 ◽
Vol 30
(12)
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pp. 1532-1536
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1995 ◽
Vol 24
(8)
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pp. 1023-1027
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2004 ◽
Vol 22
(4)
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pp. 1931
1994 ◽
Vol 33
(Part 1, No. 9B)
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pp. 5139-5142
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2015 ◽
Vol 48
(26)
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pp. 265203
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2019 ◽
Vol 103
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pp. 104614
2002 ◽
Vol 41
(Part 1, No. 11B)
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pp. 6690-6694
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1998 ◽
Vol 37
(Part 1, No. 6A)
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pp. 3214-3219
2002 ◽
Vol 41
(Part 1, No. 11B)
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pp. 6709-6713
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