Hot-Carrier Lifetime Dependence on Channel Width and Silicon Recess Depth in N-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors with the Recessed Local Oxidation of Silicon Isolation Structure
2002 ◽
Vol 41
(Part 1, No. 1)
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pp. 47-53
Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 10)
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pp. 6175-6180
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2009 ◽
Vol 48
(4)
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pp. 04C009
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2012 ◽
Vol 51
(2)
◽
pp. 02BC09
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2000 ◽
Vol 18
(2)
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pp. 765-769
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Keyword(s):