Electrical Properties of Ruthenium/Metalorganic Chemical Vapor Deposited La-Oxide/Si Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.l1315 ◽

2003 ◽

Vol 42 (Part 2, No. 11A) ◽

pp. L1315-L1317 ◽

Author(s):

Takashi Shimizu ◽

Kenichi Ishii ◽

Eiichi Suzuki

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Chemical Vapor Deposited ◽

Metalorganic Chemical

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Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

Chemistry of Materials ◽

10.1021/acs.chemmater.6b05517 ◽

2017 ◽

Vol 29 (5) ◽

pp. 2341-2347 ◽

Author(s):

Tae Hoon Lee ◽

Kwanpyo Kim ◽

Gwangwoo Kim ◽

Hyo Ju Park ◽

Declan Scullion ◽

...

Keyword(s):

Boron Nitride ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Hexagonal Boron Nitride ◽

Chemical Vapor ◽

Organic Field Effect Transistors ◽

Chemical Vapor Deposited

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Lateral GaAs growth over tungsten gratings on (001) GaAs substrates by metalorganic chemical vapor deposition and applications to vertical field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.332900 ◽

1984 ◽

Vol 55 (10) ◽

pp. 3868-3870 ◽

Author(s):

H. Asai ◽

S. Adachi ◽

S. Ando ◽

K. Oe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Gaas Substrates ◽

Vertical Field ◽

Vertical Field Effect ◽

Metalorganic Chemical

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Effects of thickness on the electrical properties of metalorganic chemical vapor deposited Pb(Zr, Ti)O3 (25–100 nm) thin films on LaNiO3 buffered Si

Journal of Applied Physics ◽

10.1063/1.1383262 ◽

2001 ◽

Vol 90 (3) ◽

pp. 1509-1515 ◽

Author(s):

C. H. Lin ◽

P. A. Friddle ◽

C. H. Ma ◽

A. Daga ◽

Haydn Chen

Keyword(s):

Electrical Properties ◽

Chemical Vapor ◽

Chemical Vapor Deposited ◽

Metalorganic Chemical

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Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.1413 ◽

1995 ◽

Vol 34 (Part 1, No. 3) ◽

pp. 1413-1416

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Meiso Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metalorganic Chemical

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Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3584024 ◽

2011 ◽

Vol 98 (18) ◽

pp. 182102 ◽

Author(s):

B. S. Ong ◽

K. L. Pey ◽

C. Y. Ong ◽

C. S. Tan ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Chemical Vapor Deposited

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Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.2838214 ◽

2008 ◽

Vol 103 (3) ◽

pp. 033708 ◽

Author(s):

S. Keller ◽

C. S. Suh ◽

Z. Chen ◽

R. Chu ◽

S. Rajan ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metalorganic Chemical

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Electrical reliability of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584243 ◽

2002 ◽

Author(s):

Hyeon-Seag Kim ◽

S.A. Campbell ◽

D.C. Gilmer

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Permittivity ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Electrical Reliability

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High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

Applied Physics Letters ◽

10.1063/1.4801861 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142106 ◽

Author(s):

Wei Wu ◽

Debtanu De ◽

Su-Chi Chang ◽

Yanan Wang ◽

Haibing Peng ◽

...

Keyword(s):

Single Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Chemical Vapor ◽

Chemical Vapor Deposited

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Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2218759 ◽

2006 ◽

Vol 100 (3) ◽

pp. 033714 ◽

Author(s):

Masataka Higashiwaki ◽

Norio Onojima ◽

Toshiaki Matsui ◽

Takashi Mimura

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Catalytic Chemical Vapor Deposition ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates

Applied Physics Letters ◽

10.1063/1.4907885 ◽

2015 ◽

Vol 106 (6) ◽

pp. 062101 ◽

Author(s):

A. Sanne ◽

R. Ghosh ◽

A. Rai ◽

H. C. P. Movva ◽

A. Sharma ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Chemical Vapor Deposited

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