Electrical reliability of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors

Chemical Vapor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Permittivity ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Electrical Reliability

Proceedings of 5th International Conference on Properties and Applications of Dielectric Materials ◽

Electrical stressed effects of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors

10.1109/icpadm.1997.616624 ◽

2002 ◽

Author(s):

Hyeon-Seag Kim ◽

S.A. Cambell ◽

D.C. Gilmer ◽

Dong Myung Kim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Permittivity ◽

Chemical Vapor Deposited ◽

Metal Organic

Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3584024 ◽

2011 ◽

Vol 98 (18) ◽

pp. 182102 ◽

Cited By ~ 2

Author(s):

B. S. Ong ◽

K. L. Pey ◽

C. Y. Ong ◽

C. S. Tan ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Chemical Vapor Deposited

Device Performance and Reliability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Chemical-Vapor-Deposited Gate Oxides

10.1143/jjap.36.4225 ◽

1997 ◽

Vol 36 (Part 1, No. 7A) ◽

pp. 4225-4229

Author(s):

Jinho Ahn ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Device Performance ◽

Gate Oxides ◽

Chemical Vapor Deposited

Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

Applied Physics Letters ◽

10.1063/1.3475394 ◽

2010 ◽

Vol 97 (5) ◽

pp. 053502 ◽

Author(s):

S. Tan ◽

S. L. Selvaraj ◽

T. Egawa

Keyword(s):

Low Temperature ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Organic Chemical ◽

Silicon Substrates ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si1-xGex Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System

10.1143/jjap.38.l1099 ◽

1999 ◽

Vol 38 (Part 2, No. 10A) ◽

pp. L1099-L1101 ◽

Cited By ~ 4

Author(s):

Kun-Ming Chen ◽

Hsiang-Jen Huang ◽

Guo-Wei Huang ◽

Chun-Yen Chang ◽

Liang-Po Chen

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

High Vacuum ◽

Chemical Vapor ◽

Ultra High Vacuum ◽

Oxide Semiconductor

$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2228201 ◽

2013 ◽

Vol 60 (1) ◽

pp. 235-240 ◽

Author(s):

H. Q. Nguyen ◽

H. D. Trinh ◽

E. Y. Chang ◽

C. T. Lee ◽

Shin Yuan Wang ◽

...

Keyword(s):

Vapor Deposition ◽

Gaas Substrate ◽

Chemical Vapor ◽

Metal Oxide Semiconductor Capacitor

Oxide Semiconductor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2Gate Oxide in the Linear and Saturation Regions

10.1143/jjap.45.3405 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3405-3409 ◽

Author(s):

Yu-Zung Chiou ◽

Yan-Kuin Su ◽

Jeng Gong ◽

Shoou-Jinn Chang ◽

Chun-Kai Wang

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Noise Analysis ◽

Chemical Vapor ◽

Heterostructure Field Effect Transistors

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors

Thin Solid Films ◽

10.1016/s0040-6090(00)01803-4 ◽

2001 ◽

Vol 384 (1) ◽

pp. 146-150 ◽

Cited By ~ 33

Author(s):

Kyu-Jeong Choi ◽

Woong-Chul Shin ◽

Soon-Gil Yoon

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics

10.1143/jjap.42.7256 ◽

2003 ◽

Vol 42 (Part 1, No. 12) ◽

pp. 7256-7258 ◽

Author(s):

Sungjoo Lee ◽

Dim-Lee Kwong

Keyword(s):

Metal Oxide ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

High Quality

Crystallographic Structures and Parasitic Resistances of Self-Aligned Silicide TiSi2/Self-Aligned Nitrided Barrier Layer/Selective Chemical Vapor Deposited Aluminum in Fully Self-Aligned Metallization Metal Oxide Semiconductor Field-Effect Transistor

10.1143/jjap.38.5835 ◽

1999 ◽

Vol 38 (Part 1, No. 10) ◽

pp. 5835-5838

Author(s):

Chang-Hun Lee ◽

Takamasa Nishimura ◽

Hideki Matsuhashi ◽

Michio Yokoyama ◽

Kazuya Masu ◽

...

Keyword(s):

Barrier Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Oxide Semiconductor ◽

Chemical Vapor Deposited ◽

Crystallographic Structures ◽

Effect Transistor ◽

Selective Chemical