Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates
2017 ◽
Vol 29
(5)
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pp. 2341-2347
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Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 7A)
◽
pp. 4225-4229
Keyword(s):
2003 ◽
Vol 42
(Part 2, No. 11A)
◽
pp. L1315-L1317
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