Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO

2003 ◽  
Vol 43 (1A/B) ◽  
pp. L53-L55 ◽  
Author(s):  
Atsushi Kobayashi ◽  
Hiroshi Fujioka ◽  
Jitsuo Ohta ◽  
Masaharu Oshima
Keyword(s):  
Room Temperature ◽  
Layer Growth ◽  
Layer By Layer ◽  
Atomically Flat

Layer-by-Layer Growth of AlN on ZnO(000$\bar{1}$) Substrates at Room Temperature

2006 ◽  
Vol 45 (No. 43) ◽  
pp. L1139-L1141 ◽  
Author(s):  
Kohei Ueno ◽  
Atsushi Kobayashi ◽  
Jitsuo Ohta ◽  
Hiroshi Fujioka
Keyword(s):  
Room Temperature ◽  
Layer Growth ◽  
Layer By Layer

Growth Stress of Thin Ti-, Al- and TiAlx-Films Deposited Under UHV-conditions and its Dependence on Substrate Temperature

1999 ◽  
Vol 580 ◽  
Author(s):  
St. Lackner ◽  
R. Abermann
Keyword(s):  
Substrate Temperature ◽  
Room Temperature ◽  
Metal Films ◽  
Growth Stress ◽  
Layer Growth ◽  
Film Stress ◽  
Layer By Layer ◽  
Island Growth ◽  
Aluminum Films ◽  
Beam Technique

AbstractThe growth stress of metal films was measured continuously both during as well as after their deposition under UHV-conditions with a cantilever beam technique. The metal films were deposited onto 10 rim thick alumina substrate films prepared by reactive evaporation of Al in an oxygen atmosphere. The substrate temperature for the metal deposition was varied from -20°C to 500°C.The growth stress of both titanium and aluminum films deposited at room temperature and above is characteristic of island growth and the formation of a polycrystalline film. The film stress built up in these films decreases with increasing substrate temperature. Below RT the growth stress of titanium films indicates a transition from island growth to layer by layer growth due to a reduced adatom mobility. The temperature range in which this transition in the growth mode occurs is strongly affected by impurities in the Ti-evaporation source material and gas ambient.In the last part of this paper we present results of experiments in which the above metals were evaporated simultaneously from separate sources to form alloy films with TiAl3-stoichiometry. Sudden changes in the incremental film stress are tentatively attributed to segregation and phase formation phenomena.

Surface Microstructures of Ferroelectric SrBi2Ta2O9, BaTiO3 and Metallic SrRuO3 Epitaxial Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Q. D. Jiang ◽  
Z. J. Huang ◽  
C. L. Chen ◽  
A. Brazdeikis ◽  
P. Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Scanning Probe Microscopy ◽  
Layer Growth ◽  
Scanning Probe ◽  
Layer By Layer ◽  
Epitaxial Thin Films ◽  
Island Growth ◽  
Surface Microstructures ◽  
Atomically Flat ◽  
2D To 3D

ABSTRACTWe have made a comparative invetigation of the surface microstructures of epitaxially grown ferroelectric SrBi2Ta2O9, BaTiO3 films, and metallic SrRuO3 films, using scanning probe microscopy. Though their lattices (or pseudotetrogonal lattices) match closely with SrTiO3 (001) substrates, SPM results show very different surface microstructures. The surfaces of SrRuO3 films display atomically flat terraces of 90° oriented step edges. The size of steps is about 6 Å. The surface of BaTiO3 films deposited at various temperatures displays uniform rectangular islands. Different stages of SrBi2Ta2O9 epitaxial growth have been studied on thickness gradient films, which show clearly 2D nucleation and layer-by-layer growth, following a transition from 2D to 3D island growth. It finally develops into a surface exhibiting round hills consisting of curved terraces with size of steps ranging from 6 Å to 12.5 Å.

Atomic-Layer Cleaving and Non-contact Thinning and Thickening for Fabrication of Laminated Electronic and Photonic Materials

2001 ◽  
Vol 681 ◽  
Author(s):  
Michael I. Current ◽  
Shari N. Farrens ◽  
Martin Fuerfanger ◽  
Sien Kang ◽  
Harry R. Kirk ◽  
...  
Keyword(s):  
Room Temperature ◽  
Compressive Strain ◽  
Atomic Layer ◽  
Layer Growth ◽  
Device Layer ◽  
Layer Transfer ◽  
Photonic Materials ◽  
Final Thickness ◽  
Plasma Activation ◽  
Atomically Flat

ABSTRACTAn innovative suite of layer transfer technologies, collectively called the NanoCleaveTM Process, includes a non-porous cleave plane utilizing a compressive strain layer, growth of a high purity, crystalline device layer, plasma activation coupled with vacuum bonding, room-temperature cleaving along an atomically flat plane and a variety of post-cleave CVD processes to thicken or thin the device layer to a desired final thickness is described. Applications of this process include fabrication of SOI wafers containing Si and SiGe alloy device layers.

Layer-by-Layer Growth of InAlN Films on ZnO(000\bar1) Substrates at Room Temperature

2010 ◽  
Vol 3 (2) ◽  
pp. 021001 ◽  
Author(s):  
Tomofumi Kajima ◽  
Atsushi Kobayashi ◽  
Kazuma Shimomoto ◽  
Kohei Ueno ◽  
Tomoaki Fujii ◽  
...  
Keyword(s):  
Room Temperature ◽  
Layer Growth ◽  
Layer By Layer

Initial Growth of Microcrystalline Silicon on Atomically Flat Hetero-Substrate

1997 ◽  
Vol 467 ◽  
Author(s):  
K. Saitoh ◽  
M. Kondo ◽  
A. Matsuda
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Layer Growth ◽  
Layer By Layer ◽  
Initial Growth ◽  
Microcrystalline Silicon ◽  
Cross Sectional ◽  
Atomic Force ◽  
Rf Glow Discharge ◽  
Atomically Flat

ABSTRACTInitial growth of microcrystalline silicon μ-Si:H) deposited on an atomically flat GaAs (001) wafer using a RF glow-discharge decomposition of hydrogen diluted monosilane gas mixture has been studied by means of atomic force microscope (AFM), Auger electron spectroscopy (AES), and cross-sectional transmitssion electron microscopy (XTEM).It is shown that the initial growth of μc-Si:H deposited at a substrate temperature of 50∼250°C consists of four successive stages, i.e., (1) a layer-by-layer growth of a-Si:H up to d ∼5 Å, (2) island formation of a-Si:H, (3) the coalescence of the islands and the nucleation of microcrystallite at d∼ 10–40 Å depending on the growth temperature, and (4) a rapid roughening with microcrystalline growth.

NEAR EDGE X-RAY ABSORPTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDIES OF THE STRUCTURAL ENVIRONMENT OF Ge–Si SYSTEMS

2000 ◽  
Vol 07 (03) ◽  
pp. 307-331 ◽  
Author(s):  
P. CASTRUCCI ◽  
R. GUNNELLA ◽  
N. PINTO ◽  
R. BERNARDINI ◽  
M. DE CRESCENZI ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
Layer Growth ◽  
Silicon Substrates ◽  
Layer By Layer ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Structural Environment ◽  
Structural And Electronic Properties ◽  
X Ray Absorption

Near edge X-ray absorption spectroscopy (XAS), X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) are powerful techniques for the qualitative study of the structural and electronic properties of several systems. The recent development of a multiple scattering approach to simulating experimental spectra opened a friendly way to the study of structural environments of solids and surfaces. This article reviews recent X-ray absorption experiments using synchrotron radiation which were performed at Ge L edges and core level electron diffraction measurements obtained using a traditional X-ray source from Ge core levels for ultrathin Ge films deposited on silicon substrates. Thermodynamics and surface reconstruction have been found to play a crucial role in the first stages of Ge growth on Si(001) and Si(111) surfaces. Both techniques show the occurrence of intermixing processes even for room-temperature-grown Ge/Si(001) samples and give a straightforward measurement of the overlayer tetragonal distortion. The effects of Sb as a surfactant on the Ge/Si(001) interface have also been investigated. In this case, evidence of layer-by-layer growth of the fully strained Ge overlayer with a reduced intermixing is obtained when one monolayer of Sb is predeposited on the surface.

STUDY OF THE Pt/Ru(0001) INTERFACE

2007 ◽  
Vol 14 (05) ◽  
pp. 911-914 ◽  
Author(s):  
P. J. GODOWSKI ◽  
Z. S. LI ◽  
J. BORK ◽  
J. ONSGAARD
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Layer Growth ◽  
Layer By Layer ◽  
Energy Position ◽  
Binding Energy Position ◽  
Intensity Changes ◽  
Level Shifts ◽  
Band Spectra

The growth process of platinum on Ru (0001) near room temperature was characterized using photoelectron spectroscopy of high resolution. The binding energy position and intensity of the Pt 4f7/2 and Ru 3d5/2 core levels as well as the shape and structure of the valence band spectra corresponding to the different stages of the deposition were analyzed. Up to ca. two adsorbate monolayers, the intensity changes of the peaks indicated layer-by-layer growth mode. The surface core level shifts of Ru and Pt levels were evaluated as -0.33 and -0.476 eV, respectively. The valence band spectra show a rather weak interaction between the d-bands of Pt and Ru .

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