Electrical Improvement of Fluorine-Passivated Metal–Organic Chemical Vapor Deposited TiO2Film on (NH4)2Sx-treated GaAs

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.l1173 ◽

2007 ◽

Vol 46 (No. 47) ◽

pp. L1173-L1175 ◽

Author(s):

Ming-Kwei Lee ◽

Chih-Feng Yen

Keyword(s):

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Passivated Metal

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The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.6857 ◽

1995 ◽

Vol 34 (Part 1, No. 12B) ◽

pp. 6857-6860 ◽

Author(s):

Chul Soon Kwon ◽

Yong Tae Kim ◽

Suk-Ki Min ◽

In Hoon Choi

Keyword(s):

Diffusion Barrier ◽

Chemical Vapor ◽

Organic Chemical ◽

Cu Metallization ◽

Tungsten Film ◽

Chemical Vapor Deposited ◽

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Leakage current characteristics of Pt∕Bi4−xLaxTi3O12∕Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films

Journal of Applied Physics ◽

10.1063/1.2213350 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014108 ◽

Author(s):

Taisuke Furukawa ◽

Takeharu Kuroiwa ◽

Takehiko Sato ◽

Yoshihisa Fujisaki ◽

Hiroshi Ishiwara

Keyword(s):

Leakage Current ◽

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Current Characteristics ◽

Ferroelectric Capacitors

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Quality enhancement of low temperature metal organic chemical vapor deposited MoS2: an experimental and computational investigation

Nanotechnology ◽

10.1088/1361-6528/ab2c3a ◽

2019 ◽

Vol 30 (39) ◽

pp. 395402 ◽

Author(s):

Zahabul Islam ◽

Kehao Zhang ◽

Joshua Robinson ◽

Aman Haque

Keyword(s):

Low Temperature ◽

Chemical Vapor ◽

Organic Chemical ◽

Quality Enhancement ◽

Computational Investigation ◽

Chemical Vapor Deposited ◽

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Conformality of Chemical-Vapor-Deposited Tungsten on TiN Prepared by Metal-organic Chemical Vapor Deposition via Cyclic Plasma Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.265 ◽

2001 ◽

Vol 40 (Part 1, No. 1) ◽

pp. 265-268 ◽

Author(s):

Soon-Hong Whang ◽

Jun Ki Kim ◽

Jin Won Park ◽

Do-Heyoung Kim ◽

Dong-Lyun Cho ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Plasma Treatment ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Growth and properties analysis of metal-organic chemical vapor deposited MgxZn1−x O films on C-Al2O3 substrates

Frontiers of Mechanical Engineering in China ◽

10.1007/s11465-008-0036-z ◽

2008 ◽

Vol 3 (3) ◽

pp. 261-264 ◽

Author(s):

Zengliang Shi ◽

Dali Liu ◽

Xiaolong Yan ◽

Zhongmin Gao ◽

Shiying Bai

Keyword(s):

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposited ◽

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Ferroelectric and reliability properties of metal-organic chemical vapor deposited Pb(Zr0.15Ti0.85)O3 thin films grown in the self-regulation process window

Applied Physics Letters ◽

10.1063/1.2198487 ◽

2006 ◽

Vol 88 (17) ◽

pp. 172904 ◽

Author(s):

Jin Shi Zhao ◽

Hyun Ju Lee ◽

Joon Seop Sim ◽

Keun Lee ◽

Cheol Seong Hwang

Keyword(s):

Self Regulation ◽

Chemical Vapor ◽

The Self ◽

Process Window ◽

Organic Chemical ◽

Regulation Process ◽

Chemical Vapor Deposited ◽

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Leakage current and electrical breakdown in metal‐organic chemical vapor deposited TiO2 dielectrics on silicon substrates

Applied Physics Letters ◽

10.1063/1.117129 ◽

1996 ◽

Vol 69 (25) ◽

pp. 3860-3862 ◽

Author(s):

Hyeon‐Seag Kim ◽

D. C. Gilmer ◽

S. A. Campbell ◽

D. L. Polla

Keyword(s):

Leakage Current ◽

Electrical Breakdown ◽

Chemical Vapor ◽

Organic Chemical ◽

Silicon Substrates ◽

Chemical Vapor Deposited ◽

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Electrical reliability of metal-organic chemical vapor deposited high permittivity TiO/sub 2/ dielectric metal-oxide-semiconductor field effect transistors

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584243 ◽

2002 ◽

Author(s):

Hyeon-Seag Kim ◽

S.A. Campbell ◽

D.C. Gilmer

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Permittivity ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Electrical Reliability

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Investigation of Metal-Organic Chemical Vapor Deposited Copper Diffusion in Tantalum after Annealing

Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects ◽

10.1109/spi.2002.258308 ◽

2002 ◽

Author(s):

S. Loh ◽

D. Zhang ◽

R. Liu ◽

C. Li ◽

A. S. Wee

Keyword(s):

Chemical Vapor ◽

Organic Chemical ◽

Copper Diffusion ◽

Chemical Vapor Deposited ◽

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Reflection characteristics of a copper metal-organic chemical-vapor-deposited thin film for vertical micromirror applications

Optics Letters ◽

10.1364/ol.27.000728 ◽

2002 ◽

Vol 27 (9) ◽

pp. 728 ◽

Author(s):

Jong Hyun Lee ◽

Ho Nam Kwon ◽

Jae Hyun Sone ◽

Jay Moon

Keyword(s):

Thin Film ◽

Chemical Vapor ◽

Organic Chemical ◽

Copper Metal ◽

Chemical Vapor Deposited ◽

Metal Organic ◽

Reflection Characteristics

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