Leakage current characteristics of Pt∕Bi4−xLaxTi3O12∕Ru ferroelectric capacitors fabricated on metal-organic chemical vapor deposited Ru films

2006 ◽  
Vol 100 (1) ◽  
pp. 014108 ◽  
Author(s):  
Taisuke Furukawa ◽  
Takeharu Kuroiwa ◽  
Takehiko Sato ◽  
Yoshihisa Fujisaki ◽  
Hiroshi Ishiwara
Keyword(s):  
Leakage Current ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposited ◽  
Metal Organic ◽  
Current Characteristics ◽  
Ferroelectric Capacitors

δ-Nb-doping Effect to The Interface Between IrO2 Top Electrode and Pb(Zr, Ti)O3 by Metal Organic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
Osamu Matsuura ◽  
Hideki Yamawaki ◽  
Masaki Nakabayashi ◽  
Yoshimasa Horii ◽  
Yoshihiro Sugiyama
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Doping Effect ◽  
Organic Chemical ◽  
Electrical Characteristics ◽  
Positive Direction ◽  
Metal Organic ◽  
Nb Doping ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe studied the Nb doping effect on the electrical characteristics of MOCVD-PZT capacitors using uniformly Nb-doped Pb(Zr, Ti)O3 (UND-PZT) and δ-Nb-doped PZT (DND-PZT) prepared by MOCVD. The 2Pr for UND-PZT was small and the UND-PZT hysteresis shifted in a positive direction. However, the 2Pr for DND-PZT decreased by only 5.5% and the hysteresis of DND-PZT didn't shift. In addition, the leakage current of DND-PZT decreased by one order at low bias compared to non-doped PZT, because the δ-Nb-doping layer maintains the barrier height, higher than that of none-doped PZT due to defect compensation. As a result, Nb1% DND-PZT was well suited to use Nb doping which decreases leakage current at low voltage and maintains 2Pr.

Growth and properties analysis of metal-organic chemical vapor deposited MgxZn1−x O films on C-Al2O3 substrates

2008 ◽  
Vol 3 (3) ◽  
pp. 261-264 ◽  
Author(s):  
Zengliang Shi ◽  
Dali Liu ◽  
Xiaolong Yan ◽  
Zhongmin Gao ◽  
Shiying Bai
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
Chemical Vapor Deposited ◽  
Metal Organic
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