Leakage current and electrical breakdown in metal‐organic chemical vapor deposited TiO2 dielectrics on silicon substrates

1996 ◽  
Vol 69 (25) ◽  
pp. 3860-3862 ◽  
Author(s):  
Hyeon‐Seag Kim ◽  
D. C. Gilmer ◽  
S. A. Campbell ◽  
D. L. Polla
Keyword(s):  
Leakage Current ◽  
Electrical Breakdown ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Chemical Vapor Deposited ◽  
Metal Organic

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

δ-Nb-doping Effect to The Interface Between IrO2 Top Electrode and Pb(Zr, Ti)O3 by Metal Organic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
Osamu Matsuura ◽  
Hideki Yamawaki ◽  
Masaki Nakabayashi ◽  
Yoshimasa Horii ◽  
Yoshihiro Sugiyama
Keyword(s):  
Leakage Current ◽  
Low Voltage ◽  
Chemical Vapor ◽  
Doping Effect ◽  
Organic Chemical ◽  
Electrical Characteristics ◽  
Positive Direction ◽  
Metal Organic ◽  
Nb Doping ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe studied the Nb doping effect on the electrical characteristics of MOCVD-PZT capacitors using uniformly Nb-doped Pb(Zr, Ti)O3 (UND-PZT) and δ-Nb-doped PZT (DND-PZT) prepared by MOCVD. The 2Pr for UND-PZT was small and the UND-PZT hysteresis shifted in a positive direction. However, the 2Pr for DND-PZT decreased by only 5.5% and the hysteresis of DND-PZT didn't shift. In addition, the leakage current of DND-PZT decreased by one order at low bias compared to non-doped PZT, because the δ-Nb-doping layer maintains the barrier height, higher than that of none-doped PZT due to defect compensation. As a result, Nb1% DND-PZT was well suited to use Nb doping which decreases leakage current at low voltage and maintains 2Pr.

Sign in / Sign up

Export Citation Format

Share Document