Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice

Gel electrophoresis, which is a standard method for separation and analysis of macromolecules such as DNA, RNA and proteins, is applied for the first time to silicon (Si) quantum dots (QDs) for size separation.

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Assembling silicon quantum dots into wires, networks and rods via metal ion bridges

Nanoscale ◽

10.1039/c8nr00631h ◽

2018 ◽

Vol 10 (16) ◽

pp. 7597-7604 ◽

Cited By ~ 2

Author(s):

Yuki Ohata ◽

Hiroshi Sugimoto ◽

Minoru Fujii

Keyword(s):

Quantum Dots ◽

Electrical Properties ◽

Metal Ions ◽

Metal Ion ◽

Silicon Quantum Dots ◽

Si Quantum Dots

Wires, networks and rods of Si quantum dots (QDs) are produced by bridging Si QDs with metal ions and the electrical properties are studied.

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Photoluminescence of pure silicon quantum dots embedded in an amorphous silica wire array

Journal of Materials Chemistry C ◽

10.1039/c7tc01117b ◽

2017 ◽

Vol 5 (27) ◽

pp. 6713-6717 ◽

Cited By ~ 1

Author(s):

Shunkai Lu ◽

Bin Wu ◽

Yuyang Sun ◽

Yafei Cheng ◽

Fan Liao ◽

...

Keyword(s):

Quantum Dots ◽

Amorphous Silica ◽

Thermal Evaporation ◽

Wire Array ◽

Silicon Quantum Dots ◽

Pure Silicon ◽

Si Quantum Dots

Si quantum dots embedded in an amorphous silica wire array were first synthesized using thermal evaporation.

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Creation of Si quantum dots in a silica matrix due to conversion of radiation defects under pulsed ion-beam exposure

Physical Chemistry Chemical Physics ◽

10.1039/c9cp04715h ◽

2019 ◽

Vol 21 (45) ◽

pp. 25467-25473 ◽

Cited By ~ 1

Author(s):

A. F. Zatsepin ◽

Yu. A. Kuznetsova ◽

C. H. Wong

Keyword(s):

Quantum Dots ◽

Ion Implantation ◽

Amorphous Silica ◽

Ion Beam ◽

Silica Matrix ◽

Radiation Defects ◽

Silicon Quantum Dots ◽

Si Quantum Dots

In this work, we report the mechanism of defects formation and discuss how the pulsed ion implantation actuates the process of silicon-quantum-dots formation in amorphous silica.

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Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

Acta Materialia ◽

10.1016/j.actamat.2009.09.034 ◽

2010 ◽

Vol 58 (2) ◽

pp. 560-569 ◽

Cited By ~ 66

Author(s):

Qijin Cheng ◽

Shuyan Xu ◽

Kostya (Ken) Ostrikov

Keyword(s):

Quantum Dots ◽

Low Temperature ◽

Single Step ◽

High Density ◽

Low Temperature Synthesis ◽

Temperature Synthesis ◽

Amorphous Sic ◽

Si Quantum Dots

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Insight into the effects of surface oxidation and carbonization on the electronic properties of silicon quantum dots and silicon slabs: a density functional study

RSC Advances ◽

10.1039/c4ra10025e ◽

2014 ◽

Vol 4 (105) ◽

pp. 60948-60952 ◽

Cited By ~ 2

Author(s):

Yuheng Zeng ◽

Liang Chen ◽

Guoqiang Liu ◽

Hua Xu ◽

Weijie Song

Keyword(s):

Quantum Dots ◽

Electronic Properties ◽

Density Functional ◽

Surface Oxidation ◽

Functional Study ◽

Silicon Quantum Dots ◽

Carrier Recombination ◽

Oxygen Oxidation ◽

Si Quantum Dots ◽

Insight Into

In this work, we investigated the effects of surface backbond-oxygen oxidation and surface substitute-carbon carbonization on carrier recombination and transportation of 10-, 12- and 14 Å Si quantum dots (QDs).

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Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells

Advances in OptoElectronics ◽

10.1155/2007/69578 ◽

2007 ◽

Vol 2007 ◽

pp. 1-11 ◽

Cited By ~ 81

Author(s):

Eun-Chel Cho ◽

Martin A. Green ◽

Gavin Conibeer ◽

Dengyuan Song ◽

Young-Hyun Cho ◽

...

Keyword(s):

Thin Film ◽

Quantum Dots ◽

Quantum Confinement ◽

Collection Efficiency ◽

Film Material ◽

Defect States ◽

Silicon Quantum Dots ◽

Rich Material ◽

Silicon Based ◽

Si Quantum Dots

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

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