Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

2010 ◽  
Vol 49 (3) ◽  
pp. 034001 ◽  
Author(s):  
Guang-Xi Hu ◽  
Ran Liu ◽  
Zhi-Jun Qiu ◽  
Ling-Li Wang ◽  
Ting-Ao Tang
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Quantum Mechanical ◽  
Double Gate ◽  
Mechanical Effects ◽  
Quantum Mechanical Effects

Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors

2011 ◽  
Vol 470 ◽  
pp. 218-223
Author(s):  
Nobuya Mori ◽  
Yoshinari Kamakura ◽  
Genaddy Mil'nikov ◽  
Hideki Minari
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Correction Term ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Analytical Expression

Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a threshold voltage shift, whose origin is attributed to an ion-induced barrier lowering (IIBL). An analytical expression for the IIBL in ultra-small MOSFETs is derived. The analytical expression for the IIBL consists of two terms: a term related to the potential curvature at the potential top and a correction term due to the screening effects. The analytical model reproduces reasonably well the stimulated IIBL in the subthreshold region.

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