Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors
Keyword(s):
Quantum-transport simulations of current-voltage characteristics are performed in ultra-small double-gate and gate-all-around metal-oxide-semiconductor field-effect-transistors (MOSFETs) with a single attractive ion in the channel region. The ion induces a threshold voltage shift, whose origin is attributed to an ion-induced barrier lowering (IIBL). An analytical expression for the IIBL in ultra-small MOSFETs is derived. The analytical expression for the IIBL consists of two terms: a term related to the potential curvature at the potential top and a correction term due to the screening effects. The analytical model reproduces reasonably well the stimulated IIBL in the subthreshold region.
1995 ◽
Vol 34
(Part 2, No. 8A)
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pp. L978-L980
2010 ◽
Vol 49
(2)
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pp. 024304
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2015 ◽
Vol 122
(3)
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pp. 1299-1305
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2006 ◽
Vol 5
(2-3)
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pp. 125-129
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2010 ◽
Vol 49
(3)
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pp. 034001
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2009 ◽
Vol 48
(5)
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pp. 054503
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