Novel High-Performance Analog Devices for Advanced Low-Power High-kMetal Gate Complementary Metal–Oxide–Semiconductor Technology

2011 ◽  
Vol 50 (4) ◽  
pp. 04DC13
Author(s):  
Jin-Ping Han ◽  
Takashi Shimizu ◽  
Li-Hong Pan ◽  
Moritz Voelker ◽  
Christophe Bernicot ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology

Analysis and Simulation of a Low-Leakage Analog Single Gate and FinFET Circuits

2014 ◽  
Vol 13 (02) ◽  
pp. 1450012 ◽  
Author(s):  
Manorama Chauhan ◽  
Ravindra Singh Kushwah ◽  
Pavan Shrivastava ◽  
Shyam Akashe
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Low Power ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Short Channel ◽  
State Dependency ◽  
Low Leakage

In the world of Integrated Circuits, complementary metal–oxide–semiconductor (CMOS) has lost its ability during scaling beyond 50 nm. Scaling causes severe short channel effects (SCEs) which are difficult to suppress. FinFET devices undertake to replace usual Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) because of their better ability in controlling leakage and diminishing SCEs while delivering a strong drive current. In this paper, we present a relative examination of FinFET with the double gate MOSFET (DGMOSFET) and conventional bulk Si single gate MOSFET (SGMOSFET) by using Cadence Virtuoso simulation tool. Physics-based numerical two-dimensional simulation results for FinFET device, circuit power is presented, and classifying that FinFET technology is an ideal applicant for low power applications. Exclusive FinFET device features resulting from gate–gate coupling are conversed and efficiently exploited for optimal low leakage device design. Design trade-off for FinFET power and performance are suggested for low power and high performance applications. Whole power consumptions of static and dynamic circuits and latches for FinFET device, believing state dependency, show that leakage currents for FinFET circuits are reduced by a factor of over ~ 10X, compared to DGMOSFET and ~ 20X compared with SGMOSFET.

scholarly journals High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

Nano Letters ◽  
2015 ◽  
Vol 15 (8) ◽  
pp. 4928-4934 ◽  
Author(s):  
Lili Yu ◽  
Ahmad Zubair ◽  
Elton J. G. Santos ◽  
Xu Zhang ◽  
Yuxuan Lin ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Technology
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