Digital and Analog-Mixed-Signal In-Memory Processing in CMOS SRAM

2019 ◽  
Author(s):  
Akhilesh Jaiswal ◽  
Amogh Agrawal ◽  
Indranil Chakraborty ◽  
Mustafa Fayez Ali ◽  
Kaushik Roy
Keyword(s):  
Mixed Signal ◽  
Memory Processing

Basic numerical processing, calculation, and working memory in children with dyscalculia and/or ADHD symptoms

2016 ◽  
Vol 44 (5) ◽  
pp. 365-375 ◽  
Author(s):  
Jörg-Tobias Kuhn ◽  
Elena Ise ◽  
Julia Raddatz ◽  
Christin Schwenk ◽  
Christian Dobel
Keyword(s):  
Working Memory ◽  
Processing Speed ◽  
Verbal Working Memory ◽  
Typically Developing ◽  
Cognitive Profiles ◽  
Adhd Symptoms ◽  
Memory Processing ◽  
Numerical Processing ◽  
Hyperactivity Disorder ◽  
Neurocognitive Measures

Abstract. Objective: Deficits in basic numerical skills, calculation, and working memory have been found in children with developmental dyscalculia (DD) as well as children with attention-deficit/hyperactivity disorder (ADHD). This paper investigates cognitive profiles of children with DD and/or ADHD symptoms (AS) in a double dissociation design to obtain a better understanding of the comorbidity of DD and ADHD. Method: Children with DD-only (N = 33), AS-only (N = 16), comorbid DD+AS (N = 20), and typically developing controls (TD, N = 40) were assessed on measures of basic numerical processing, calculation, working memory, processing speed, and neurocognitive measures of attention. Results: Children with DD (DD, DD+AS) showed deficits in all basic numerical skills, calculation, working memory, and sustained attention. Children with AS (AS, DD+AS) displayed more selective difficulties in dot enumeration, subtraction, verbal working memory, and processing speed. Also, they generally performed more poorly in neurocognitive measures of attention, especially alertness. Children with DD+AS mostly showed an additive combination of the deficits associated with DD-only and A_Sonly, except for subtraction tasks, in which they were less impaired than expected. Conclusions: DD and AS appear to be related to largely distinct patterns of cognitive deficits, which are present in combination in children with DD+AS.


Abstract-concept learning and list-memory processing

2003 ◽  
Author(s):  
Anthony A. Wright ◽  
Jeffrey S. Katz ◽  
Jacquelyne J. Rivera ◽  
Jocelyne Bachevalier
Keyword(s):  
Concept Learning ◽  
Abstract Concept ◽  
Memory Processing ◽  
List Memory

Rapid prototyping of algorithmic A/D converters based on FPAA devices

2013 ◽  
Vol 61 (3) ◽  
pp. 691-696 ◽  
Author(s):  
R. Suszynski ◽  
K. Wawryn
Keyword(s):  
Rapid Prototyping ◽  
Sinusoidal Signal ◽  
Digital Converter ◽  
Mixed Signal ◽  
Analog Digital Converter ◽  
Signal Systems ◽  
Programmable Analog ◽  
Field Programmable ◽  
Field Programmable Analog Array

Abstract A rapid prototyping method for designing mixed signal systems has been presented in the paper. The method is based on implementation of the field programmable analog array (FPAA) to configure and reconfigure mixed signal systems. A serial algorithmic analog digital converter has been used as an example. Three converter architectures have been selected and implemented FPAA device. To verify and illustrate converters operation and prototyping capabilities, implemented converters have been excited by a sinusoidal signal. Analog sinusoidal excitations, digital responses and sinusoidal waveforms after reconstruction are presented.

Arithmetic Compactors Design: Application to Mixed Signal Systems

2012 ◽  
Vol 1 (1) ◽  
pp. 1-7
Author(s):  
Vadim Geurkov ◽  
◽  
Lev Kirischian ◽  
Keyword(s):  
Mixed Signal ◽  
Signal Systems

Latch-Up Induced Slit Voiding in Aluminum Metal Lines

1999 ◽  
Author(s):  
Chunyu Zhang ◽  
Lakshmi Vedula ◽  
Shekhar Khandekar
Keyword(s):  
High Temperature ◽  
Line Width ◽  
Fold Increase ◽  
Metal Line ◽  
Operating Life ◽  
Mixed Signal ◽  
Aluminum Metal ◽  
Temperature Operating ◽  
Latch Up

Abstract Latch-up induced during High Temperature Operating Life (HTOL) test of a mixed signal device fabricated with 1.0 μm CMOS, double poly, double metal process caused failures due to an open in aluminum metal line. Metal lines revealed wedge voids of about 50% of the line width. Triggering of latch up mechanism during the HTOL test resulted in a several fold increase of current flowing through the ground metal line. This increase in current resulted in the growth of the wedge voids leading to failures due to open metal lines.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

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