Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate
Dielectric and Passivation Layer
2019 ◽
Vol 40
(12)
◽
pp. 1921-1924
◽
2018 ◽
Vol 65
(2)
◽
pp. 680-686
◽
Keyword(s):
2016 ◽
Vol 55
(5)
◽
pp. 051001
◽