Effect of Heavy Boron Doping on Oxide Precipitate Growth in Czochralski Silicon

ABSTRACTThis paper describes recent progress on nucleation and growth of oxide precipitates and stacking faults in Czochralski silicon. Conclusions on the growth kinetics of oxide precipitates are drawn from the experiments and analysis of growth kinetics of two-dimensional precipitates: The experimentally obtained growth kinetics, three-quarter power law is theoretically derived and the precipitate growth is demonstrated to be diffusion-limited by oxygen interstitials. The formation mechanism of stacking faults is the Bardeen-Herring mechanism. Based on diffusional growth model, the growth kinetics of stacking faults are analyzed, assuming a coexistence of self-interstitial supersaturation and vacancy undersaturation. It is found that the growth is driven by vacancies in undersaturation. Vacancy component of self-diffusion has been determined and found to be predominant at low temperature. The possibility of growth model proposed for increase of oxide precipitate density during annealing has been excluded. Both processes, homogeneous and heterogeneous nucleation, have been taking place during annealing.

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Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

Journal of The Electrochemical Society ◽

10.1149/1.1392496 ◽

1999 ◽

Vol 146 (9) ◽

pp. 3461-3465 ◽

Cited By ~ 3

Author(s):

T. Ono ◽

A. Romanowski ◽

E. Asayama ◽

H. Horie ◽

K. Sueoka ◽

...

Keyword(s):

Dislocation Generation ◽

Czochralski Silicon ◽

Boron Doped ◽

Induced Dislocation ◽

Oxide Precipitate

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Effect of the boron doping concentration and Fermi level on the generation of crystal originated particles inp‐type Czochralski silicon wafers

Applied Physics Letters ◽

10.1063/1.112795 ◽

1994 ◽

Vol 65 (16) ◽

pp. 2069-2071 ◽

Cited By ~ 3

Author(s):

W. Wijaranakula ◽

S. Archer

Keyword(s):

Fermi Level ◽

Doping Concentration ◽

Boron Doping ◽

Silicon Wafers ◽

Czochralski Silicon

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Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.242.135 ◽

2015 ◽

Vol 242 ◽

pp. 135-140 ◽

Cited By ~ 2

Author(s):

Vladimir V. Voronkov ◽

Robert Falster

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Silicon Wafers ◽

Density Profiles ◽

Cooling Stage ◽

Czochralski Silicon ◽

Self Diffusion ◽

Oxygen Precipitation ◽

Oxide Precipitate ◽

Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

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Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers

Journal of The Electrochemical Society ◽

10.1149/1.1393266 ◽

2000 ◽

Vol 147 (2) ◽

pp. 756 ◽

Cited By ~ 25

Author(s):

Koji Sueoka ◽

Masanori Akatsuka ◽

Mitsuharu Yonemura ◽

Toshiaki Ono ◽

Eiichi Asayama ◽

...

Keyword(s):

Boron Doping ◽

Silicon Substrates ◽

Czochralski Silicon ◽

Oxygen Precipitation

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Effect of Oxide Precipitate Sizes on the Mechanical Strength of Czochralski Silicon Wafers

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.7095 ◽

1997 ◽

Vol 36 (Part 1, No. 12A) ◽

pp. 7095-7099 ◽

Cited By ~ 12

Author(s):

Koji Sueoka ◽

Masanori Akatsuka ◽

Hisashi Katahama ◽

Naoshi Adachi

Keyword(s):

Mechanical Strength ◽

Silicon Wafers ◽

Czochralski Silicon ◽

Oxide Precipitate

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Light-induced degradation in n-type Czochralski silicon by boron-doping and thermal donor compensation

Journal of Applied Physics ◽

10.1063/1.4759245 ◽

2012 ◽

Vol 112 (8) ◽

pp. 084509 ◽

Cited By ~ 14

Author(s):

Peng Chen ◽

Xuegong Yu ◽

Yichao Wu ◽

Jianjiang Zhao ◽

Deren Yang

Keyword(s):

Boron Doping ◽

Czochralski Silicon ◽

Thermal Donor

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Verification of a Method to Detect Grown-in Oxide Precipitate Nuclei in Czochralski Silicon

ECS Transactions ◽

10.1149/1.2778658 ◽

2019 ◽

Vol 11 (3) ◽

pp. 161-171 ◽

Cited By ~ 3

Author(s):

Gudrun Kissinger ◽

Andreas Sattler ◽

Jarek Dabrowski ◽

Wilfried Von Ammon

Keyword(s):

Czochralski Silicon ◽

Oxide Precipitate

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Oxygen Precipitation in Silicon: Numerical Models

MRS Proceedings ◽

10.1557/proc-59-301 ◽

1985 ◽

Vol 59 ◽

Cited By ~ 3

Author(s):

J. P. Lavine ◽

G. A. Hawkins ◽

C. N. Anagnostopoulos ◽

L. Rivaud

Keyword(s):

Experimental Data ◽

Numerical Model ◽

Numerical Models ◽

Local Concentration ◽

Interstitial Oxygen ◽

Czochralski Silicon ◽

Oxygen Precipitation ◽

Precipitate Growth ◽

Evolution Of Precipitates ◽

Precipitate Density

ABSTRACTWe present a numerical model that simulates the evolution of precipitates and the diffusion of interstitial oxygen in Czochralski silicon. The growth and/or dissolution of each precipitate and the local concentration of interstitial oxygen with which the precipitates interact are followed as a function of time. We treat realistic densities of discrete, interacting precipitates and determine how the precipitate density influences the extent of the precipitation. The model also treats oxygen outdiffusion and the formation of precipitate-free or denuded zones. We apply the model to previous experimental data on the time dependence of precipitate growth and to the development of denuded zones during intrinsic gettering.

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