Atomic Layer Deposition of Titanium Nitride Thin Films Using tert-Butylamine and Allylamine as Reductive Nitrogen Sources

2002 ◽  
Vol 5 (1) ◽  
pp. C4 ◽  
Author(s):  
Marika Juppo ◽  
Petra Alén ◽  
Mikko Ritala ◽  
Timo Sajavaara ◽  
Juhani Keinonen ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Tert Butylamine

Tert-butylamine and Allylamine as Reductive Nitrogen Sources in Atomic Layer Deposition of TaN Thin Films

2002 ◽  
Vol 17 (1) ◽  
pp. 107-114 ◽  
Author(s):  
Petra Alén ◽  
Marika Juppo ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
Timo Sajavaara ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Nitrogen Source ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Elastic Recoil ◽  
X Ray ◽  
Detection Analysis ◽  
Layer Deposition ◽  
Tert Butylamine

The atomic layer deposition technique was used to deposit TaN thin films from TaCl5 and TaBr5 and tert-butylamine or allylamine as a reductive nitrogen source with and without ammonia. The films were characterized with time-of-flight elastic recoil detection analysis, energy-dispersive x-ray spectroscopy, x-ray diffraction, and the standard four-point probe method. The films deposited from tert-butylamine and ammonia with both tantalum precursors had reasonably low halide contents. When allylamine was used as a nitrogen source, on the contrary, the films contained larger amounts of chlorine and other impurities. The resistivity increased markedly as the deposition temperature was decreased. The lowest resistivities (below 1500 μΩ cm) were obtained when the films were deposited from TaCl5 or TaBr5 with tert-butylamine at 500 °C.

Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature

2017 ◽  
Vol 727 ◽  
pp. 907-914
Author(s):  
Wen Hui Tang ◽  
Yi Jia ◽  
Bo Cheng Zhang ◽  
Chang Wei Yang ◽  
You Zhi Qu ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Flow Rate ◽  
Nitrogen Sources ◽  
Atomic Layer ◽  
Gas Mixture ◽  
X Ray ◽  
Layer Deposition

Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100). The films using N2 and N2/H2 gas mixture had a higher crystal quality than films using NH3. The GPC (growth rate per cycle) would increase with the increase of the N2 flow rate. The films using a suitable ratio of N2/H2 flow rate had not only a high GPC but a good crystal quality. The ratios of Ga/N element of the films using N2/H2 gas mixture were approximated to 1:1, it would increase with the ratio of the N2/H2 flow rate in the gas mixture, which is showing much effect of the ratios of N2/H2 flow rate on the nitrogen content of the thin films.

Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition

2017 ◽  
Vol 30 (9) ◽  
pp. 095010 ◽  
Author(s):  
Y T Yemane ◽  
M J Sowa ◽  
J Zhang ◽  
L Ju ◽  
E W Deguns ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Niobium Titanium

scholarly journals Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride

2019 ◽  
Vol 9 (12) ◽  
pp. 4556
Author(s):  
Sasha Woodward-Gagné ◽  
Nicolas Desjardins-Lecavalier ◽  
Bill Baloukas ◽  
Oleg Zabeida ◽  
Ludvik Martinu
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Angular Selectivity

Stress modulation of titanium nitride thin films deposited using atomic layer deposition

2017 ◽  
Vol 35 (1) ◽  
pp. 01B144 ◽  
Author(s):  
Manuj Nahar ◽  
Noel Rocklein ◽  
Michael Andreas ◽  
Greg Funston ◽  
Duane Goodner
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Layer Deposition

Low-temperature (≤200 °C) plasma enhanced atomic layer deposition of dense titanium nitride thin films

2013 ◽  
Vol 31 (1) ◽  
pp. 01A137 ◽  
Author(s):  
Nigamananda Samal ◽  
Hui Du ◽  
Russell Luberoff ◽  
Krishna Chetry ◽  
Randhir Bubber ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Dense Titanium

scholarly journals Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015218
Author(s):  
Changbong Yeon ◽  
Jaesun Jung ◽  
Hyeran Byun ◽  
Kok Chew Tan ◽  
Taeho Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Alkyl Halides ◽  
Layer Deposition ◽  
Tertiary Alkyl

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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