Characterization of Low Oxidation States of Tungsten and Tungsten Electrodes in AlCl3 ‐ NaCl Melts by X‐Ray Photoelectron Spectroscopy

1985 ◽  
Vol 132 (5) ◽  
pp. 1136-1140 ◽  
Author(s):  
A. G. Cavinato ◽  
G. Mamantov ◽  
X. B. Cox
1993 ◽  
Vol 8 (10) ◽  
pp. 2679-2685 ◽  
Author(s):  
P. Moretti ◽  
B. Canut ◽  
S.M.M. Ramos ◽  
R. Brenier ◽  
P. Thévenard ◽  
...  

LiNbO3 single crystals were implanted at room temperature with Eu+ ions at 70 keV with fluence ranging from 0.5 to 5 × 1016 ions · cm−2. The damage in the implanted layer has been investigated by Channeling Rutherford Backscattering (RBS-C), and the oxidation states of the cations have been determined by x-ray photoelectron spectroscopy (XPS). Following implantation, a fully amorphized layer of 60 nm is generated, even for the lowest fluence employed. Subsequent annealing in air, in the range 800–1250 K, was applied to restore tentatively the crystallinity and promote the substitutional incorporation of Eu in the crystal. Only a partial recrystallization of the damaged layer was observed. For as-implanted samples, XPS spectra clearly reveal europium in Eu2+ and Eu3+ states, and the Nb5+ ions are driven to lower charge states.


1993 ◽  
Vol 318 ◽  
Author(s):  
Eddie D. Pylant ◽  
Carolyn F. Hoener ◽  
Mark F. Arendt ◽  
Bob Witowski

ABSTRACTChemical/native oxides grown on Si(100) after several standard wet cleans are characterized by Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS), and Auger Electron Spectroscopy using sputter depth profiles. Target Factor Analysis (TFA) was used to separate the Si LVV Auger peak into three components identified by their lineshapes and positions as Si, SiO2, and SiOx- Auger depth profiles were used to quantify the thickness of the oxides, the depth distribution, and amount of SiOx in the interface region. ARXPS was used to study the chemical state distribution in the native oxides as a function of depth. The depth distribution function from the Auger data was converted to an angle-resolved format for direct comparison to the angle-resolved XPS data. With this comparison, the SiOx lineshape is correlated to a 3:1 mixture of Si 3+ and Si 2+ oxidation states.


1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.


2011 ◽  
Vol 415-417 ◽  
pp. 642-647
Author(s):  
En Zhong Li ◽  
Da Xiang Yang ◽  
Wei Ling Guo ◽  
Hai Dou Wang ◽  
Bin Shi Xu

Ultrafine fibers were electrospun from polyacrylonitrile (PAN)/N,N-dimethyl formamide (DMF) solution as a precursor of carbon nanofibers. The effects of solution concentration, applied voltage and flow rate on preparation and morphologies of electrospun PAN fibers were investigated. Morphologies of the green fibers, stabilized fibers and carbonized fibers were compared by scanning electron microscope (SEM). The diameter of PAN nanofibers is about 450nm and the distribution of diameter is well-proportioned. Characterization of the elements changes of fibers were performed by X-ray photoelectron spectroscopy (XPS).


Sign in / Sign up

Export Citation Format

Share Document