Innovation IV - Enacting high-k gate dielectrics and atomic layer deposition technology, 1996-2007

Fortunes of High-Tech: a History of Innovation at ASM International ◽

10.1117/3.2572061.int9 ◽

2019 ◽

Author(s):

Jorijn van Duijn

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Layer Deposition ◽

High K ◽

Deposition Technology

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ChemInform Abstract: Atomic Layer Deposition for CMOS Scaling: High-k Gate Dielectrics on Si, Ge, and III-V Semiconductors

10.1002/chin.200802230 ◽

2008 ◽

Vol 39 (2) ◽

Author(s):

Martin M. Frank

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Cmos Scaling ◽

Layer Deposition ◽

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Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

Applied Surface Science ◽

10.1016/j.apsusc.2018.02.225 ◽

2018 ◽

Vol 443 ◽

pp. 421-428 ◽

Author(s):

Yu-Shu Lin ◽

Po-Hsien Cheng ◽

Kuei-Wen Huang ◽

Hsin-Chih Lin ◽

Miin-Jang Chen

Keyword(s):

Atomic Layer Deposition ◽

Surface Functionalization ◽

Gate Dielectrics ◽

Atomic Layer ◽

Layer Deposition ◽

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Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3025865 ◽

2009 ◽

Vol 27 (1) ◽

pp. 389 ◽

Author(s):

S. Dueñas ◽

H. Castán ◽

H. Garcia ◽

A. Gómez ◽

L. Bailón ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Hafnium Oxide ◽

Gate Dielectrics ◽

Atomic Layer ◽

Ozone Precursors ◽

Layer Deposition ◽

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Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8 Å on conventional metal electrode

2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) ◽

10.1109/vlsit.2003.1221067 ◽

2004 ◽

Author(s):

Seok-Jun Won ◽

Yong-Kuk Jeong ◽

Dae-Jin Kwon ◽

Moon-Han Park ◽

Ho-Kyu Kang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Electrode ◽

Layer Deposition ◽

High K ◽

Deposition Technology

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Atomic Layer Deposition for CMOS Scaling: High-k Gate Dielectrics on Si, Ge, and III-V Semiconductors

ECS Meeting Abstracts ◽

10.1149/ma2007-02/17/995 ◽

2007 ◽

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Cmos Scaling ◽

Layer Deposition ◽

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Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.3269579 ◽

2009 ◽

Vol 95 (22) ◽

pp. 223303 ◽

Author(s):

Shree Prakash Tiwari ◽

Xiao-Hong Zhang ◽

William J. Potscavage ◽

Bernard Kippelen

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Organic Field Effect Transistors ◽

Solution Processed ◽

Layer Deposition ◽

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Atomic Layer Deposition for CMOS Scaling: High-k Gate Dielectrics on Si, Ge, and III-V Semiconductors

ECS Transactions ◽

10.1149/1.2779083 ◽

2019 ◽

Vol 11 (7) ◽

pp. 187-200 ◽

Author(s):

Martin Frank

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Cmos Scaling ◽

Layer Deposition ◽

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X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2009774 ◽

2005 ◽

Vol 23 (5) ◽

pp. 2244 ◽

Author(s):

P. Y. Hung ◽

Carolyn Gondran ◽

Amiya Ghatak-Roy ◽

Shinichi Terada ◽

Ben Bunday ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Deposition Process ◽

X Ray ◽

Atomic Layer Deposition Process ◽

Layer Deposition ◽

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Metal Organic Atomic Layer Deposition of High-k Gate Dielectrics Using Plasma Oxidation

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.l685 ◽

2003 ◽

Vol 42 (Part 2, No. 6B) ◽

pp. L685-L687 ◽

Author(s):

Kazuhiko Endo ◽

Toru Tatsumi

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Plasma Oxidation ◽

Layer Deposition ◽

High K ◽

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Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

Electronics Letters ◽

10.1049/el.2009.0728 ◽

2009 ◽

Vol 45 (11) ◽

pp. 570 ◽

Author(s):

S. Abermann ◽

G. Pozzovivo ◽

J. Kuzmik ◽

C. Ostermaier ◽

C. Henkel ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Gate Dielectrics ◽

Atomic Layer ◽

Current Collapse ◽

Layer Deposition ◽

High K ◽

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