Metal Silicide Nanowires

Semiconductor-metal composites, formed by the eutectic solidification of silicon and a metal silicide have been under investigation for some time for a number of electronic device applications. This composite system is comprised of a silicon matrix containing extended metal-silicide rod-shaped structures aligned in parallel throughout the material. The average diameter of such a rod in a typical system is about 1 μm. Thus, characterization of the rod morphology by electron microscope methods is necessitated.The types of morphometric information that may be obtained from such microscopic studies coupled with image processing are (i) the area fraction of rods in the matrix, (ii) the average rod diameter, (iii) an average circularity (roundness), and (iv) the number density (Nd;rods/cm2). To acquire electron images of these materials, a digital image processing system (Tracor Northern 5500/5600) attached to a JEOL JXA-840 analytical SEM has been used.

Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates

Journal of Applied Physics ◽

10.1063/1.332821 ◽

1983 ◽

Vol 54 (4) ◽

pp. 1849-1854 ◽

Cited By ~ 42

Author(s):

J. E. E. Baglin ◽

F. M. d’Heurle ◽

C. S. Petersson

Keyword(s):

Silicon Oxide ◽

Silicon Substrates ◽

Metal Silicide ◽

Interface Effects

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

Applied Physics Letters ◽

10.1063/1.4742861 ◽

2012 ◽

Vol 101 (5) ◽

pp. 052110 ◽

Cited By ~ 17

Author(s):

L. Lin ◽

Y. Guo ◽

J. Robertson

Keyword(s):

Fermi Level ◽

Schottky Barriers ◽

Metal Silicide ◽

Fermi Level Pinning

Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.154.95 ◽

2009 ◽

Vol 154 ◽

pp. 95-100 ◽

Cited By ~ 13

Author(s):

Seiichi Miyazaki ◽

Mitsuhisa Ikeda ◽

Katsunori Makihara ◽

K. Shimanoe ◽

R. Matsumoto

Keyword(s):

Surface Potential ◽

Room Temperature ◽

Areal Density ◽

Film Deposition ◽

Floating Gate ◽

Metal Silicide ◽

Kelvin Probe ◽

Measuring Surface ◽

Surface Potential Measurements ◽

Mis Capacitors

We demonstrated a new fabrication method of Pt- and Ni-silicide nanodots with an areal density of the order of ~1011 cm-2 on SiO2 through the process steps of ultrathin metal film deposition on pre-grown Si-QDs and subsequent remote H2 plasma treatments at room temperature. Verification of electrical separation among silicide nanodots was made by measuring surface potential changes due to electron injection and extraction using an AFM/Kelvin probe technique. Photoemission measurements confirm a deeper potential well of silicide nanodots than Si-QDs and a resultant superior charge retention was also verified by surface potential measurements after charging to and discharging. Also, the advantage in many electron storage per silicide nanodot was demonstrated in C-V characteristics of MIS capacitors with silicide nanodots FGs.

A structure modeling of metal-silicide layers by using axial and planar channeling techniques

Nuclear Instruments and Methods ◽

10.1016/0029-554x(78)90898-4 ◽

1978 ◽

Vol 149 (1-3) ◽

pp. 417-420 ◽

Cited By ~ 22

Author(s):

Hiroshi Ishiwara ◽

Masao Nagatomo ◽

Seijiro Furukawa

Keyword(s):

Structure Modeling ◽

Metal Silicide ◽

Planar Channeling

Microstructure and wear resistance of Cuss-toughened Cr5Si3/CrSi metal silicide alloys

Journal of Materials Research ◽

10.1557/jmr.2005.0174 ◽

2005 ◽

Vol 20 (5) ◽

pp. 1122-1130 ◽

Cited By ~ 4

Author(s):

Y.X. Yin ◽

H.M. Wang

Keyword(s):

Solid Solution ◽

Wear Resistance ◽

Sliding Wear ◽

Room Temperature ◽

Wear Test ◽

Melting Process ◽

Dry Sliding Wear ◽

Metal Silicide ◽

X Ray Diffraction ◽

X Ray

Wear-resistant Cu-based solid-solution-toughened Cr5Si3/CrSi metal silicide alloy with a microstructure consisting of predominantly the dual-phase primary dendrites with a Cr5Si3 core encapsulated by CrSi phase and a small amount of interdendritic Cu-based solid solution (Cuss) was designed and fabricated by the laser melting process using Cr–Si–Cu elemental powder blends as the precursor materials. The microstructure of the Cuss-toughened Cr5Si3/CrSi metal silicide alloy was characterized by optical microscopy, powder x-ray diffraction, and energy dispersive spectroscopy. The Cuss-toughened silicide alloys have excellent wear resistance and low coefficient of friction under room temperature dry sliding wear test conditions with hardened 0.45% C carbon steel as the sliding–mating counterpart.

Processing high-temperature refractory-metal silicide in-situ composites

JOM ◽

10.1007/s11837-999-0077-8 ◽

1999 ◽

Vol 51 (4) ◽

pp. 32-36 ◽

Cited By ~ 81

Author(s):

B. P. Bewlay ◽

M. R. Jackson ◽

P. R. Subramanian

Keyword(s):

High Temperature ◽

Refractory Metal ◽

Metal Silicide ◽

In Situ Composites

Electronic structure of Ni and other transition-metal silicide overlayers on Si

Journal of Physics C Solid State Physics ◽

10.1088/0022-3719/18/4/023 ◽

1985 ◽

Vol 18 (4) ◽

pp. 947-959 ◽

Cited By ~ 14

Author(s):

J Robertson

Keyword(s):

Electronic Structure ◽

Transition Metal ◽

Metal Silicide ◽

Transition Metal Silicide

Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction

Applied Physics Letters ◽

10.1063/1.3683546 ◽

2012 ◽

Vol 100 (6) ◽

pp. 061109 ◽

Cited By ~ 31

Author(s):

Shiyang Zhu ◽

H. S. Chu ◽

G. Q. Lo ◽

P. Bai ◽

D. L. Kwong

Keyword(s):

Near Infrared ◽

Infrared Detector ◽

Metal Silicide ◽

Self Assembled

Modelling Geometrical Effects of Parasitic and Contact Resistance of FET Devices

MRS Proceedings ◽

10.1557/proc-427-147 ◽

1996 ◽

Vol 427 ◽

Cited By ~ 1

Author(s):

Geoffrey K. Reeves ◽

H. Barry Harrison ◽

Patrick W. Leech

Keyword(s):

Contact Resistance ◽

Material Properties ◽

Ohmic Contacts ◽

Difficult Problem ◽

Specific Contact Resistance ◽

Metal Silicide ◽

Transmission Line Model ◽

Specific Contact ◽

Geometrical Effects ◽

Contact Parameters

AbstractThe continual trend in decreasing the dimensions of semiconductor devices results in a number of technological problems. One of the more significant of these is the increase in contact resistance, Rc. In order to understand and counteract this increase, Rc needs to be quantitatively modelled as a function of the geometrical and material properties of the contact. However the use of multiple semiconductor layers for ohmic contacts makes the modelling and calculation of Rc a more difficult problem. In this paper, a Tri-Layer Transmission Line Model (TLTLM) is used to analyse a MOSFET ohmic contact and gatedrain region. A quantitative assessment of the influence on Rc of important contact parameters such as the metal-silicide specific contact resistance, the silicide-silicon specific contact resistance and the gate-drain length can thus be made. The paper further describes some of the problems that may be encountered in defining Rc when the dimensions of certain types of contact found in planar devices decrease.