Effect of NH[sub 3]/He Plasma Treatment on Electrical Reliability and Early-Stage Electromigration Behavior of Copper Interconnects

2009 ◽  
Vol 156 (9) ◽  
pp. D343 ◽  
Author(s):  
Shou-Yi Chang ◽  
Fong-Jie Lin ◽  
Chia-Feng Lin ◽  
Hsun-Feng Hsu
Keyword(s):  
Plasma Treatment ◽  
Early Stage ◽  
Copper Interconnects ◽  
Electrical Reliability

Effect of NH3/He Plasma Treatment on Electromigration Behavior and Electrical Reliability of Copper Interconnects

2019 ◽  
Vol 19 (2) ◽  
pp. 785-794
Author(s):  
Shou-Yi Chang ◽  
Fong-Jie Lin ◽  
Chia-Feng Lin
Keyword(s):  
Plasma Treatment ◽  
Copper Interconnects ◽  
Electrical Reliability

Ru Passivated and Ru Doped e-TaN surfaces as Combined Barrier and Liner Material for Copper Interconnects: A First Principles Study

2018 ◽  
Author(s):  
Suresh Natarajan ◽  
Cara-Lena Nies ◽  
Michael Nolan
Keyword(s):  
First Principles ◽  
Film Growth ◽  
Early Stage ◽  
Copper Interconnects ◽  
Liner Material ◽  
Critical Dimensions ◽  
Industry Standard ◽  
Cu Film ◽  
Improved Performance ◽  
And Diffusion

<div>As the critical dimensions of transistors continue to be scaled down to facilitate improved performance and device speeds, new ultrathin materials that combine diffusion barrier and seed/liner properties are needed for copper interconnects at these length scales. Ideally, to facilitate coating of high aspect ratio structures, this alternative barrier+liner material should only consist of one or as few layers as possible. We studied TaN, the current industry standard for Cu diffusion barriers, and Ru, which is a</div><div>suitable liner material for Cu electroplating, to explore how combining these two materials in a barrier+liner material influences the adsorption of Cu atoms in the early stage of Cu film growth. To this end, we carried out first-principles simulations of the adsorption and diffusion of Cu adatoms at Ru-passivated and Ru-doped e-TaN(1 1 0) surfaces. For comparison, we also studied the behaviour of Cu and Ru adatoms at the low index surfaces of e-TaN, as well as the interaction of Cu adatoms with the (0 0 1) surface of hexagonal Ru. Our results confirm the barrier and liner properties of TaN and Ru, respectively while also highlighting the weaknesses of both materials. Ru passivated TaN was found to have improved binding with Cu adatoms as compared to the bare TaN and Ru surfaces.</div><div>On the other hand, the energetic barrier for Cu diffusion at Ru passivated TaN surface was lower than at the bare TaN surface which can promote Cu agglomeration. For Ru-doped TaN however, a decrease in Cu binding energy was found in addition to favourable migration of the Cu adatoms toward the doped Ru atom and unfavourable migration away from it or into the bulk. This suggests that Ru doping sites in the TaN surface can act as nucleation points for Cu growth with high migration barrier preventing agglomeration and allow electroplating of Cu. Therefore Ru-doped TaN is proposed as a candidate for a combined barrier+liner material with reduced thickness.</div>

Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

2000 ◽  
Vol 147 (3) ◽  
pp. 1186 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
Jae-Kyun Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Copper Interconnects ◽  
Deuterium Plasma ◽  
Hydrogen Silsesquioxane ◽  
Low K

Ru Passivated and Ru Doped e-TaN surfaces as Combined Barrier and Liner Material for Copper Interconnects: A First Principles Study

2018 ◽  
Author(s):  
Suresh Natarajan ◽  
Cara-Lena Nies ◽  
Michael Nolan
Keyword(s):  
First Principles ◽  
Film Growth ◽  
Early Stage ◽  
Copper Interconnects ◽  
Liner Material ◽  
Critical Dimensions ◽  
Industry Standard ◽  
Cu Film ◽  
Improved Performance ◽  
And Diffusion

<div>As the critical dimensions of transistors continue to be scaled down to facilitate improved performance and device speeds, new ultrathin materials that combine diffusion barrier and seed/liner properties are needed for copper interconnects at these length scales. Ideally, to facilitate coating of high aspect ratio structures, this alternative barrier+liner material should only consist of one or as few layers as possible. We studied TaN, the current industry standard for Cu diffusion barriers, and Ru, which is a</div><div>suitable liner material for Cu electroplating, to explore how combining these two materials in a barrier+liner material influences the adsorption of Cu atoms in the early stage of Cu film growth. To this end, we carried out first-principles simulations of the adsorption and diffusion of Cu adatoms at Ru-passivated and Ru-doped e-TaN(1 1 0) surfaces. For comparison, we also studied the behaviour of Cu and Ru adatoms at the low index surfaces of e-TaN, as well as the interaction of Cu adatoms with the (0 0 1) surface of hexagonal Ru. Our results confirm the barrier and liner properties of TaN and Ru, respectively while also highlighting the weaknesses of both materials. Ru passivated TaN was found to have improved binding with Cu adatoms as compared to the bare TaN and Ru surfaces.</div><div>On the other hand, the energetic barrier for Cu diffusion at Ru passivated TaN surface was lower than at the bare TaN surface which can promote Cu agglomeration. For Ru-doped TaN however, a decrease in Cu binding energy was found in addition to favourable migration of the Cu adatoms toward the doped Ru atom and unfavourable migration away from it or into the bulk. This suggests that Ru doping sites in the TaN surface can act as nucleation points for Cu growth with high migration barrier preventing agglomeration and allow electroplating of Cu. Therefore Ru-doped TaN is proposed as a candidate for a combined barrier+liner material with reduced thickness.</div>

The effect of low-pressure dielectric barrier discharge (LPDBD) plasma in boosting germination, growth, and nutritional properties in wheat

2021 ◽  
Author(s):  
Mahedi Hasan ◽  
Md. Sohanur Rahman Sohan ◽  
Salek Ahmed Sajib ◽  
Md. Forhad Hossain ◽  
Masum Miah ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Dielectric Barrier Discharge ◽  
Barrier Discharge ◽  
Early Stage ◽  
Germination Rate ◽  
Low Pressure ◽  
Cellular Level ◽  
Nutritional Properties ◽  
Sod Activity ◽  
Dielectric Barrier

Abstract Plasma agriculture is an emerging technology, although the application of non-thermal plasma in wheat productivity is still in its early stage. This study deciphers the effect and mechanistic basis of non-thermal air-generated LPDBD (low-pressure dielectric barrier discharge) plasma in boosting germination, growth and nutritional properties in wheat. Seeds treated with LPDBD plasma exhibited cracked periphery and 6 min treatment showed a 22.11% increase in the germination rate compared to non-treated controls. At the cellular level, the concentration of H2O2 in leaves significantly increased (3.56 µM g-1FW) due to LPDBD plasma treatment, may act as a stimulating agent to trigger the physiological functions in wheat plants. In addition, plants sprouted from air-treated seeds exhibited a marked elevation in CAT and SOD activity accompanied by the increased expression of TaCAT and TaSOD genes in roots of wheat. Interestingly, the grain yield of wheat increased by 27.06% in response to plasma treatment compared to control. Further, grains harvested from plasma-treated plants showed a substantial elevation in iron and fat content as well as decreased moisture content that may contribute to the increased shelf life. The study will open up a new avenue for practical application of plasma in agriculture.

scholarly journals Comparison of H2and NH3Treatments for Copper Interconnects

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Yu-Min Chang ◽  
Jihperng Leu ◽  
Bing-Hong Lin ◽  
Ying-Lung Wang ◽  
Yi-Lung Cheng
Keyword(s):  
Plasma Treatment ◽  
Failure Time ◽  
Treatment Time ◽  
Copper Interconnects ◽  
Low Dielectric ◽  
Reliability Characteristics ◽  
Cu Film ◽  
Adhesion Failure ◽  
Plasma Treatment Time ◽  
Oxide Removal

The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after ammonia (NH3) or hydrogen (H2) plasma treatment were investigated in this study. The experimental results show that H2plasma treatment has excellent Cu oxide removal efficiency, less impact on the formation of Cu hillocks, and less damage on low-dielectric constant (low-k) dielectrics in comparison to NH3plasma treatment. However, H2plasma treatment results in a higher leakage current between the Cu lines and shorter electromigration (EM) failure time due to a weaker adhesion strength at the Cu film interface. On the other hand, NH3plasma treatment without the sufficient treatment time would lead to an increased probability of delamination at the Cu/barrier layer interface since the Cu oxide layer can not be completely removed. As a result, extending NH3plasma treatment time can efficiently reduce the adhesion failure and enlarge EM resistance as well.

Effects of plasma treatment on the electrical reliability of multilayer MoS 2 field-effect transistors

2017 ◽  
Vol 637 ◽  
pp. 32-36 ◽  
Author(s):  
Boung Jun Lee ◽  
Byung Jun Lee ◽  
Jongchan Lee ◽  
Ji-Woon Yang ◽  
Kwang-Ho Kwon
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Reliability

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

2019 ◽  
Vol 8 (12) ◽  
pp. P764-P767 ◽  
Author(s):  
Xianglie Sun ◽  
Shuliang Lv ◽  
Yuan Li ◽  
Jun Luo ◽  
Chi Huang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Copper Interconnects ◽  
Ar Plasma
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