Effect of NH3/He Plasma Treatment on Electromigration Behavior and Electrical Reliability of Copper Interconnects

2019 ◽  
Vol 19 (2) ◽  
pp. 785-794
Author(s):  
Shou-Yi Chang ◽  
Fong-Jie Lin ◽  
Chia-Feng Lin
Keyword(s):  
Plasma Treatment ◽  
Copper Interconnects ◽  
Electrical Reliability

Effect of NH[sub 3]/He Plasma Treatment on Electrical Reliability and Early-Stage Electromigration Behavior of Copper Interconnects

2009 ◽  
Vol 156 (9) ◽  
pp. D343 ◽  
Author(s):  
Shou-Yi Chang ◽  
Fong-Jie Lin ◽  
Chia-Feng Lin ◽  
Hsun-Feng Hsu
Keyword(s):  
Plasma Treatment ◽  
Early Stage ◽  
Copper Interconnects ◽  
Electrical Reliability

Improvement on Intrinsic Electrical Properties of Low-k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment

2000 ◽  
Vol 147 (3) ◽  
pp. 1186 ◽  
Author(s):  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
Ya-Liang Yang ◽  
Yi-Fang Cheng ◽  
Jae-Kyun Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Copper Interconnects ◽  
Deuterium Plasma ◽  
Hydrogen Silsesquioxane ◽  
Low K

scholarly journals Comparison of H2and NH3Treatments for Copper Interconnects

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Yu-Min Chang ◽  
Jihperng Leu ◽  
Bing-Hong Lin ◽  
Ying-Lung Wang ◽  
Yi-Lung Cheng
Keyword(s):  
Plasma Treatment ◽  
Failure Time ◽  
Treatment Time ◽  
Copper Interconnects ◽  
Low Dielectric ◽  
Reliability Characteristics ◽  
Cu Film ◽  
Adhesion Failure ◽  
Plasma Treatment Time ◽  
Oxide Removal

The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after ammonia (NH3) or hydrogen (H2) plasma treatment were investigated in this study. The experimental results show that H2plasma treatment has excellent Cu oxide removal efficiency, less impact on the formation of Cu hillocks, and less damage on low-dielectric constant (low-k) dielectrics in comparison to NH3plasma treatment. However, H2plasma treatment results in a higher leakage current between the Cu lines and shorter electromigration (EM) failure time due to a weaker adhesion strength at the Cu film interface. On the other hand, NH3plasma treatment without the sufficient treatment time would lead to an increased probability of delamination at the Cu/barrier layer interface since the Cu oxide layer can not be completely removed. As a result, extending NH3plasma treatment time can efficiently reduce the adhesion failure and enlarge EM resistance as well.

Effects of plasma treatment on the electrical reliability of multilayer MoS 2 field-effect transistors

2017 ◽  
Vol 637 ◽  
pp. 32-36 ◽  
Author(s):  
Boung Jun Lee ◽  
Byung Jun Lee ◽  
Jongchan Lee ◽  
Ji-Woon Yang ◽  
Kwang-Ho Kwon
Keyword(s):  
Plasma Treatment ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Reliability

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

2019 ◽  
Vol 8 (12) ◽  
pp. P764-P767 ◽  
Author(s):  
Xianglie Sun ◽  
Shuliang Lv ◽  
Yuan Li ◽  
Jun Luo ◽  
Chi Huang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Copper Interconnects ◽  
Ar Plasma

Activity of Ag Nanoparticle Supported Zeolite after Plasma Treatment

2013 ◽  
Vol 133 (3) ◽  
pp. 144-145 ◽  
Author(s):  
Yoshiyuki Teramoto ◽  
Hyun-Ha Kim ◽  
Atsushi Ogata ◽  
Nobuaki Negishi
Keyword(s):  
Plasma Treatment ◽  
Ag Nanoparticle

Investigation of Plasma Treatment Conditions for Wafer-Scale Room-Temperature Bonding Using Ultrathin Au Films in Ambient Air

2019 ◽  
Vol 139 (7) ◽  
pp. 217-218
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Room Temperature ◽  
Ambient Air ◽  
Wafer Scale ◽  
Treatment Conditions

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

RF THERMAL PLASMA TREATMENT OF WASTE GLASS AND ITS REUTILIZATION IN COMPOSITE MATERIALS

2006 ◽  
Vol 10 (2) ◽  
pp. 207-218 ◽  
Author(s):  
V. Colombo ◽  
E. Ghedini ◽  
G. Masini ◽  
D. Russo ◽  
F. Andreola ◽  
...  
Keyword(s):  
Composite Materials ◽  
Plasma Treatment ◽  
Thermal Plasma ◽  
Waste Glass ◽  
Rf Thermal Plasma
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