Gate SiO2 Film Integrity on Ultra-Pure Argon Anneal (100) Silicon Surface

The heat transfer during spray cooling was studied experimentally using deionized water to investigate the spray characteristics and the differences between spray cooling on a smooth silicon surface and nano- and hybrid micro/nano-structured surfaces. The spray cooling experiments show that the heat transfer rates were best for the nano-structured surface, followed by the smooth surface coated with the SiO2 film and the pure silicon surface since the contact angle was smallest on the nano-structured surface and increased on the other two surfaces. The Critical Heat Flux (CHF) was largest for the 25G×25S surface coated with four Carbon Nano Tube (CNT) films with a 75.3% increase over the smooth surface.

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UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130353 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1144-1145

Author(s):

T. Sato ◽

S. Kitamura ◽

T. Sueyoshl ◽

M. Iwatukl ◽

C. Nielsen

Keyword(s):

High Temperature ◽

Relaxation Process ◽

Thermal Effect ◽

Bias Voltage ◽

Silicon Surface ◽

Growth Process ◽

Tunneling Current ◽

Fabrication Technique ◽

Nano Fabrication ◽

Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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Profile Imaging of Silicon Surface Reconstructions

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100118229 ◽

1985 ◽

Vol 43 ◽

pp. 262-263

Author(s):

O.L. Krivanek ◽

G.J. Wood

Keyword(s):

Electron Microscopy ◽

Surface Structure ◽

Structure Determination ◽

Silicon Surface ◽

Good Resolution ◽

Surface Reconstructions ◽

Bulk Structure ◽

Point To Point ◽

The Relationship

Electron microscopy at 0.2nm point-to-point resolution, 10-10 torr specimei region vacuum and facilities for in-situ specimen cleaning presents intere; ing possibilities for surface structure determination. Three methods for examining the surfaces are available: reflection (REM), transmission (TEM) and profile imaging. Profile imaging is particularly useful because it giv good resolution perpendicular as well as parallel to the surface, and can therefore be used to determine the relationship between the surface and the bulk structure.

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Frustration and (111) silicon surface

Journal de Physique ◽

10.1051/jphys:01983004402025700 ◽

1983 ◽

Vol 44 (2) ◽

pp. 257-261 ◽

Cited By ~ 14

Author(s):

B.K. Chakraverty

Keyword(s):

Silicon Surface

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A Model of Vibronic Interaction in a Quasi-2D System: Cooperative Pseudo-Jahn-Teller Effect on a Silicon Surface with Ba Submonolayers*

Zeitschrift für Physikalische Chemie ◽

10.1524/zpch.1996.1.1.449 ◽

1996 ◽

Vol 1 (1) ◽

pp. 449-454

Author(s):

V. S. Vikhnin ◽

G. V. Benemanskaya

Keyword(s):

Silicon Surface ◽

Vibronic Interaction ◽

Teller Effect ◽

2D System ◽

Jahn Teller ◽

Jahn Teller Effect

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Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

ISTFA 2005: Conference Proceedings from the 31st International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2005p0064 ◽

2005 ◽

Author(s):

U. Kerst ◽

P. Sadewater ◽

R. Schlangen ◽

C. Boit ◽

R. Leihkauf ◽

...

Keyword(s):

Numerical Simulation ◽

Electrical Properties ◽

Process Parameters ◽

Thermal Effects ◽

Silicon Surface ◽

Ohmic Contacts ◽

Ion Beam ◽

Schottky Barriers ◽

Material Analysis ◽

Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

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