Modeling Current Transients in a Reciprocal Motion Tribocorrosion Experiment

2021 ◽  
Vol 168 (3) ◽  
pp. 031503
Author(s):  
Claes-Olof A. Olsson ◽  
Anna Neus Igual Munoz ◽  
Shoufan Cao ◽  
Stefano Mischler
Keyword(s):  
CORROSION ◽  
2000 ◽  
Vol 56 (9) ◽  
pp. 928-934
Author(s):  
G. Miramontes de León ◽  
D. C. Farden ◽  
D. E. Tallman

Abstract A new approach for the measurement of noise resistance based on the transient behavior of pitting corrosion is presented. Potential noise and current transients have been recognized as a characteristic behavior of pitting corrosion. This new approach uses the transient information present during corrosion as a way to estimate the noise resistance of coated metals directly. Computer simulation and analytical results are presented, indicating that the new technique can be applied to the problem of noise resistance estimation. This new approach was applied to experimental electrochemical noise data obtained with commercial electrochemical impedance spectroscopy (EIS)/electrochemcial noise measurement (ENM) equipment.


2007 ◽  
Vol 9 (7) ◽  
pp. 1672-1676 ◽  
Author(s):  
Takatoshi Yamamoto ◽  
Koji Fushimi ◽  
Masahiro Seo ◽  
Shiro Tsuri ◽  
Tetsuo Adachi ◽  
...  

2007 ◽  
Vol 18 (14) ◽  
pp. 145708 ◽  
Author(s):  
Z B Xie ◽  
B M Henry ◽  
K R Kirov ◽  
D A R Barkhouse ◽  
V M Burlakov ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-16 ◽  
Author(s):  
E. Gaubas ◽  
T. Ceponis ◽  
V. Kalendra ◽  
J. Kusakovskij ◽  
A. Uleckas

Technique for barrier evaluation by measurements of current transients induced by linearly increasing voltage pulse based on analysis of barrier and diffusion capacitance changes is presented. The components of the barrier capacitance charging and generation/recombination currents are discussed. Different situations of the impact of deep center defects on barrier and diffusion capacitance changes are analyzed. Basics of the profiling of layered junction structures using the presented technique are discussed. Instrumentation for implementation of this technique and for investigations of the steady-state bias infra-red illumination and temperature dependent variations of the barrier capacitance charging and generation/recombination currents are described. Applications of this technique for the analysis of barrier quality in solar cells and particle detectors fabricated on silicon material are demonstrated.


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