Improved Retention Characteristics of Pd-Nanocrystal-Based Nonvolatile Memories by a Simple Timing Technique

2015 ◽  
Vol 4 (12) ◽  
pp. N20-N22
Author(s):  
T.-K. Kang ◽  
Y.-F. Chen ◽  
C.-L. Lin ◽  
F.-H. Wang ◽  
H.-W. Liu ◽  
...  
2010 ◽  
Vol 1250 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo

AbstractMaterials and electrical properties of the MOS capacitor containing nc-RuO embedded in the high-k ZrHfO dielectric film have been studied. The electron- and hole-trapping capacities and trapping sites in this kind of device were investigated using the constant voltage stress method, the frequency-dependent C-V measurement, and the retention characteristics. The negligible charge trapping phenomenon in the non-embedded device rules out the possibility of any trapping site in the bulk ZrHfO film or at the Si/ZrHfO interface. The electrical characterization result suggests that electrons are trapped in the bulk nc-RuO. However, holes have two possible trapping sites, i.e., in the bulk nc-RuO or at the nc-RuO/ZrHfO interface.


2009 ◽  
Vol E92-C (5) ◽  
pp. 659-663 ◽  
Author(s):  
Doo-Hyun KIM ◽  
Il Han PARK ◽  
Seongjae CHO ◽  
Jong Duk LEE ◽  
Hyungcheol SHIN ◽  
...  

Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.


HortScience ◽  
1998 ◽  
Vol 33 (3) ◽  
pp. 557a-557
Author(s):  
Mary Ann Rose ◽  
Barbara Biernacka

Long-standing fertilizer recommendations for field-grown nursery and landscape ornamentals are based on maximizing growth, not nutrient efficiency. Further, these recommendations fall short because of failure to consider 1) the extent of crop nutrient removal, 2) varying nutrient retention characteristics of soils across the United States, and 3) a body of research that suggests that woody ornamentals have a limited response to fertilization under most soil conditions. Concern for the environmental impact of fertilization justifies a reevaluation of current nursery fertilization practices, as well a discussion of the practical constraints on the adoption of new approaches, e.g., nutrient demand-driven fertilization. Research on the nutrient use patterns of woody plants will be reviewed with emphasis on implications for increasing fertilization efficiency. OSU research on water availability and nutrient-use interactions also will be presented.


2021 ◽  
Author(s):  
Honglei Wang ◽  
Pengfei Cheng ◽  
Jun Shi ◽  
Dong Wang ◽  
Hongguang Wang ◽  
...  

Efficient and green exfoliation of bulk MoS2 into few-layered nanosheets in the semiconducting hexagonal phase (2H-phase) remains a great challenge. Here, we developed a new method, water-assisted exfoliation (WAE), for...


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