Erratum: Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride [ECS J. Solid State Sci. Technol., 6, N189 (2017)]

2018 ◽  
Vol 7 (5) ◽  
pp. X3-X3
Author(s):  
John T. Gaskins ◽  
Patrick E. Hopkins ◽  
Devin R. Merrill ◽  
Sage R. Bauers ◽  
Erik Hadland ◽  
...  
Keyword(s):  
Solid State ◽  
Aluminum Nitride ◽  
Aluminum Oxide ◽  
Structural Properties ◽  
Hafnium Oxide ◽  
Beryllium Oxide ◽  
Atomic Layer

Engineered tantalum aluminate and hafnium aluminate ALD films for ultrathin dielectric films with improved electrical and thermal properties

2001 ◽  
Vol 670 ◽  
Author(s):  
Robert B. Clark-Phelps ◽  
Anuranjan Srivastava ◽  
Lance Cleveland ◽  
Thomas E. Seidel ◽  
Ofer Sneh
Keyword(s):  
Thin Films ◽  
Aluminum Oxide ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Layer Deposition ◽  
Smooth Transitions ◽  
Single Material

ABSTRACTContinued scaling of device dimensions requires deposition of high-quality thin films with a thickness of 50 angstroms or less. Nucleation effects in typical CVD processes make it difficult to achieve continuous films in this thickness regime. Atomic layer deposition (ALD), a technique developed over 25 years ago but applied to IC processing only recently, enables deposition of ultra-thin films with atomic-scale precision. This technique offers 100 percent step coverage of high aspect ratio features, as-deposited films which are amorphous and free of pinholes, excellent within-wafer uniformity and wafer-to-wafer uniformity, and favorable electrical properties. Moreover, ALD offers the opportunity to engineer material properties by creating layered structures (nanolaminates) and mixtures (alloys) which combine advantageous properties of different materials. These last features may be critical in efforts to replace silicon dioxide as the industry's dielectric workhorse if no single material emerges as a suitable direct replacement. The nanolaminate capability of ALD will be discussed with physical and electrical data on nanolaminates of aluminum oxide with tantalum pentoxide and aluminum oxide with hafnium oxide. Individual nanolaminate layers can be varied from tens of angstroms to as little as 1-2 atomic layers. Data for Al2O3/Ta2O5 and Al2O3/HfO2 alloys will also be presented demonstrating the ability to create materials with controlled, variable composition. The alloy and nanolaminate capabilities enable the creation of graded interfaces and atomically smooth transitions between different materials. Prospects for application of these materials to gate stacks and capacitors will be assessed.

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

scholarly journals Nanoscale Solid State Batteries Enabled by Thermal Atomic Layer Deposition of a Lithium Polyphosphazene Solid State Electrolyte

2017 ◽  
Vol 29 (8) ◽  
pp. 3740-3753 ◽  
Author(s):  
Alexander J. Pearse ◽  
Thomas E. Schmitt ◽  
Elliot J. Fuller ◽  
Farid El-Gabaly ◽  
Chuan-Fu Lin ◽  
...  
Keyword(s):  
Solid State ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Solid State Electrolyte ◽  
Layer Deposition ◽  
Solid State Batteries

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

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