Application of 2D Pit Growth Method to Mg Thin Films: Part II. Salt Film and Hydrogen Evolution

2019 ◽  
Vol 166 (11) ◽  
pp. C3266-C3274 ◽  
Author(s):  
Aline D. Gabbardo ◽  
G. Viswanathan ◽  
G. S. Frankel
Author(s):  
Jianwen Liu ◽  
Wangping Wu ◽  
Xiang Wang

Developing novel hydrogen evolution reaction (HER) catalysts with high activity, high stability and low cost is of great importance for the applications of hydrogen energy. In this work, iridium-nickel (Ir-Ni) thin films were electrodeposited on a copper foam as electrocatalyst for HER, and electrodeposition mechanism of Ir-Ni film was studied. The morphology and chemical composition of thin films were determined by scanning electron microscopy and energy-dispersive spectroscopy, respectively. The electrocatalytic performances of the films were estimated by linear sweep voltammograms, electrochemical impedance spectroscopy and cyclic voltammetry. The results show that Ir-Ni thin films were attached to the substrate of porous structure and hollow topography. The deposition of Ni was preferable in the electrolyte without the addition of additives, and Ir-Ni thin film was alloyed, resulting in high deposition rate for Ir42Ni58 thin film, and subsequently an increase of Ir content in the thin films of Ir80Ni20 and Ir88Ni12. Ir-Ni thin films with Tafel slopes of 40-49 mV·dec-1 exhibited highly efficient electrocatalytic activity for HER. The electrocatalytic activity of Ir-Ni thin films showed a loading dependence. As the solution temperature raised from 20 oC to 60 oC, the hydrogen evolution performance of Ir-Ni thin films improved. The apparent activation energy value of Ir88Ni12 film was 7.1 kJ·mol-1. Long-term hydrogen evolution tests exhibited excellent electrocatalystic stability in alkaline solution.


2020 ◽  
Vol MA2020-01 (37) ◽  
pp. 1535-1535
Author(s):  
Marcelo Videa ◽  
D. Alfonso Crespo-Yapur ◽  
Alejandra Medrano

Author(s):  
Soumia Nemmour ◽  
Siham Djoumi ◽  
Fatiha Kail ◽  
Pere Roura-Grabulosa ◽  
Pere Roca i Cabarrocas ◽  
...  

2019 ◽  
Vol 954 ◽  
pp. 72-76
Author(s):  
Ze Qi Li ◽  
Zi Min Chen ◽  
Wei Qu Chen ◽  
Gang Wang

In this paper, Ga2O3 thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). There was phase transition for samples grown with different flow rates of triethyl-gallium (TEGa) and deionized water (H2O). It is found that ε-Ga2O3 is difficult to coalesce and the phase mixture by β­Ga2O3 takes place if the flow rates of TEGa and H2O are too high. However, by using multiple-step growth method, the film became fully coalesced. High-quality ε-Ga2O3 thin film with atomically flat surface and multilayer morphology was obtained.


2019 ◽  
Vol 35 (8) ◽  
pp. 141-150 ◽  
Author(s):  
Andres G. Muñoz ◽  
Christian Heine ◽  
Hagen W. Klemm ◽  
Thomas Hannappel ◽  
Nadine Szabo ◽  
...  

2007 ◽  
Vol 1012 ◽  
Author(s):  
David Fuertes Marrón ◽  
Sebastian Lehmann ◽  
Justyna Kosk ◽  
Sascha Sadewasser ◽  
Martha Ch. Lux-Steiner

AbstractA dry method for the growth of highly-structured Cu-containing chalcopyrite material on solid substrates, based on the use of metallic precursors, is described. Nanocrystals, sub-micrometer polycrystalline dots, and macroscopic clusters have be grown, either as isolated units or alternatively as embedded structures in a matrix of a binary chalcogenide compound, by adjusting processing parameters. Vapor-liquid-solid (VLS) induced growth has been used for the growth of chalcopyrite nanowires. Examples of material characterization by scanning probe techniques are shown, demonstrating the suitability of the proposed growth method.


RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36129-36139 ◽  
Author(s):  
J. K. Dash ◽  
L. Chen ◽  
Michael R. Topka ◽  
Peter H. Dinolfo ◽  
L. H. Zhang ◽  
...  

Synthesis of Nb2O5 thin films from sputter deposited Nb films and its optical property.


1999 ◽  
Vol 38 (Part 1, No. 10) ◽  
pp. 6031-6033 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yoshihiro Toda ◽  
Takato Nakamura ◽  
Toshitaka Fujii

2013 ◽  
Vol 49 (68) ◽  
pp. 7516 ◽  
Author(s):  
Zhiyi Lu ◽  
Haichuan Zhang ◽  
Wei Zhu ◽  
Xiaoyou Yu ◽  
Yun Kuang ◽  
...  

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