scholarly journals Electric Field Tuning of Magnetism in Fe3O4/Pt/PZN-PT Heterostructures Prepared by Atomic Layer Deposition

2021 ◽  
Author(s):  
Le Zhang ◽  
Weixiao Hou ◽  
Tao Li ◽  
Jian He ◽  
Jiliang Mu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Electric Field ◽  
Magnetic Anisotropy ◽  
Atomic Layer ◽  
Resonance Spectroscopy ◽  
Layer Deposition ◽  
Out Of Plane ◽  
Lead Zinc ◽  
Multiferroic Heterostructures ◽  
Silicon Based

Abstract Tuning of magnetic properties by electric field (E-field) has received extensive attention because it is compact, fast, and energy efficient. Here, multiferroic heterostructures of Fe3O4/Pt/PZN-PT (011) (lead zinc niobate-lead titanate single piezoelectric substrate) were in-situ fabricated by atomic layer deposition (ALD) using C10H10Fe and O2 as precursors at a low temperature (400oC) without a subsequent annealing process in H2 atmosphere, which is beneficial in combining with traditional silicon-based semiconductor technology. The E-field dependence of the magnetic anisotropy was studied systematically by ferromagnetic resonance spectroscopy with the larger tunable in-plane magnetic anisotropy of 152 Oe and 318 Oe obtained along the [100] and [0-11] axes, corresponding to the largest magnetoelectric coupling coefficient of 31.8 Oe.cm/kV. Also, the tunable out-of-plane magnetic anisotropy of 35 Oe was obtained along the [011] axis. The outstanding E-field tuning magnetism in the Fe3O4/Pt/PZN-PT heterostructures offers significant possibilities for novel multiferroic devices.

Atomic layer deposition of highly doped Er:Al2O3 and Tm:Al2O3 for silicon-based waveguide amplifiers (Conference Presentation)

2016 ◽  
Author(s):  
John Roenn ◽  
Lasse Karvonen ◽  
Alexander Pyymäki-Perros ◽  
Nasser N. Peyghambarian ◽  
Harri Lipsanen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Waveguide Amplifiers ◽  
Layer Deposition ◽  
Silicon Based

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al2O3 MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 486-489 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Electric Field ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Al2o3 Layer ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Layer Deposition ◽  
The Stability

This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

scholarly journals Blue Electroluminescent Al2O3/Tm2O3 Nanolaminate Films Fabricated by Atomic Layer Deposition on Silicon

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 413 ◽  
Author(s):  
Yao Liu ◽  
Zhongtao Ouyang ◽  
Li Yang ◽  
Yang Yang ◽  
Jiaming Sun
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Impact Excitation ◽  
Precise Control ◽  
Decay Lifetime ◽  
Layer Deposition ◽  
Sublayer Thickness ◽  
Silicon Based ◽  
The Impact

Realization of a silicon-based light source is of significant importance for the future development of optoelectronics and telecommunications. Here, nanolaminate Al2O3/Tm2O3 films are fabricated on silicon utilizing atomic layer deposition, and intense blue electroluminescence (EL) from Tm3+ ions is achieved in the metal-oxide-semiconductor structured luminescent devices based on them. Precise control of the nanolaminates enables the study on the influence of the Tm dopant layers and the distance between every Tm2O3 layer on the EL performance. The 456 nm blue EL from Tm3+ ions shows a maximum power density of 0.15 mW/cm2. The EL intensities and decay lifetime decrease with excessive Tm dopant cycles due to the reduction of optically active Tm3+ ions. Cross-relaxation among adjacent Tm2O3 dopant layers reduces the blue EL intensity and the decay lifetime, which strongly depends on the Al2O3 sublayer thickness, with a critical value of ~3 nm. The EL is attributed to the impact excitation of the Tm3+ ions by hot electrons in Al2O3 matrix via Poole–Frenkel mechanism.

Growth of the Initial Atomic Layers of Ta-N Films During Atomic Layer Deposition on Silicon-Based Substrates

2011 ◽  
Vol 17 (1-3) ◽  
pp. 37-44 ◽  
Author(s):  
Steffen Strehle ◽  
Daniela Schmidt ◽  
Matthias Albert ◽  
Johann W. Bartha
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Silicon Based

scholarly journals On the transformation of “zincone”-like into porous ZnO thin films from sub-saturated plasma enhanced atomic layer deposition

2019 ◽  
Vol 10 ◽  
pp. 746-759 ◽  
Author(s):  
Alberto Perrotta ◽  
Julian Pilz ◽  
Stefan Pachmajer ◽  
Antonella Milella ◽  
Anna Maria Coclite
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
Zno Thin Films ◽  
Carbon Impurities ◽  
Layer Deposition ◽  
Out Of Plane ◽  
Controlled Porosity ◽  
Temperature Ranges

The synthesis of nanoporous ZnO thin films is achieved through annealing of zinc-alkoxide (“zincone”-like) layers obtained by plasma-enhanced atomic layer deposition (PE-ALD). The zincone-like layers are deposited through sub-saturated PE-ALD adopting diethylzinc and O2 plasma with doses below self-limiting values. Nanoporous ZnO thin films were subsequently obtained by calcination of the zincone-like layers between 100–600 °C. Spectroscopic ellipsometry (SE) and X-ray diffraction (XRD) were adopted in situ during calcination to investigate the removal of carbon impurities, development of controlled porosity, and formation and growth of ZnO crystallites. The layers developed controlled nanoporosity in the range of 1–5%, with pore sizes between 0.27 and 2.00 nm as measured with ellipsometric porosimetry (EP), as a function of the plasma dose and post-annealing temperature. Moreover, the crystallinity and crystallite orientation could be tuned, ranging from a powder-like to a (100) preferential growth in the out-of-plane direction, as measured by synchrotron-radiation grazing incidence XRD. Calcination temperature ranges were identified in which pore formation and subsequent crystal growth occurred, giving insights in the manufacturing of nanoporous ZnO from Zn-based hybrid materials.

scholarly journals Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook

2019 ◽  
Vol 37 (6) ◽  
pp. 060904 ◽  
Author(s):  
Rafaiel A. Ovanesyan ◽  
Ekaterina A. Filatova ◽  
Simon D. Elliott ◽  
Dennis M. Hausmann ◽  
David C. Smith ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Semiconductor Manufacturing ◽  
Atomic Layer ◽  
Current Status ◽  
Future Outlook ◽  
Layer Deposition ◽  
Silicon Based
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