Flexible Oxide Thin-Film Transistors Fabricated at Room Temperature By Introducing Polymer Dielectric and Microwave Annealing

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1937-1937
Author(s):  
SeongCheol Jang ◽  
Jaehyun Kim ◽  
Kyung Jin Lee ◽  
Hyun-Suk Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Microwave Annealing ◽  
Polymer Dielectric

Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature

2010 ◽  
Vol 31 (6) ◽  
pp. 567-569 ◽  
Author(s):  
Joo Hyon Noh ◽  
Seung Yoon Ryu ◽  
Sung Jin Jo ◽  
Chang Su Kim ◽  
Sung-Woo Sohn ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

P-Doped SiO2 Proton Conducting Films for Low Voltage Thin Film Transistors

2013 ◽  
Vol 773 ◽  
pp. 660-663
Author(s):  
Li Qiang Guo ◽  
Zhao Jun Guo ◽  
Yuan Yuan Yang ◽  
Ju Mei Zhou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Low Voltage ◽  
Proton Conduction ◽  
Proton Conductors ◽  
Oxide Thin Film ◽  
Shadow Mask ◽  
Electrical Characteristics ◽  
Capacitance Density

P-doped SiO2 were prepared by PECVD and one metal shadow mask self-assembled method was used for fabricating oxide thin film transistors gated by such proton conductors. Proton conduction of these films was demonstrated and electrical characteristics of oxide thin film transistors gated by such proton conductors were discussed. Due to excellent proton conduction and big capacitance density, oxide thin film transistors gated by such proton conductors have obtained excellent performances with mobility of 48.39 cm2/Vs, threshold voltage of-0.36 V, subthreshold swing of 0.13 V/decade, Ion/off ratio of 3.2×106 with the relative humidity of 30% at the room temperature.

Room Temperature Oxide Deposition Approach to Fully Transparent, All-Oxide Thin-Film Transistors

2015 ◽  
Vol 27 (40) ◽  
pp. 6090-6095 ◽  
Author(s):  
Thomas Rembert ◽  
Corsin Battaglia ◽  
André Anders ◽  
Ali Javey
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Oxide Deposition ◽  
Temperature Oxide

Zinc cadmium oxide thin film transistors fabricated at room temperature

2011 ◽  
Vol 519 (13) ◽  
pp. 4361-4365 ◽  
Author(s):  
Deuk-Hee Lee ◽  
Sangsig Kim ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Cadmium Oxide ◽  
Oxide Thin Film ◽  
Zinc Cadmium
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