(Invited) Electrochemical Li Nucleation, Growth, and Dissolution in Oxide Solid Electrolyte Systems

2020 ◽  
Vol MA2020-02 (40) ◽  
pp. 2525-2525
Author(s):  
Munekazu Motoyama ◽  
Mizuki Kitagawa ◽  
Masaharu Hirota ◽  
Takayuki Yamamoto ◽  
Yasutoshi Iriyama
Keyword(s):  
Solid Electrolyte ◽  
Oxide Solid Electrolyte ◽  
Nucleation Growth

Nanoscale observation of the solid electrolyte interface and lithium dendrite nucleation–growth process during the initial lithium electrodeposition

2020 ◽  
Vol 8 (35) ◽  
pp. 18348-18357
Author(s):  
Shuwei Wang ◽  
Xiaoguang Yin ◽  
Dongqing Liu ◽  
Yuanming Liu ◽  
Xianying Qin ◽  
...  
Keyword(s):  
Solid Electrolyte ◽  
Current Density ◽  
Growth Process ◽  
Solid Electrolyte Interface ◽  
Electrolyte Interface ◽  
Lithium Deposition ◽  
Lithium Dendrite ◽  
Nucleation Growth

The influence of current density and capacity on lithium deposition was investigated, including the nucleation, growth and SEI evolution processes.

Bipolar resistive switching characteristics of samarium oxide solid electrolyte thin films for non-volatile memory applications

2019 ◽  
Vol 12 (03) ◽  
pp. 1950023
Author(s):  
Mei Ji ◽  
Yangjiang Wu ◽  
Zhengzhong Zhang ◽  
Ya Wang ◽  
Hao Liu
Keyword(s):  
Thin Films ◽  
Solid Electrolyte ◽  
Resistive Switching ◽  
High Resistance State ◽  
High Yield ◽  
Bipolar Resistive Switching ◽  
Non Volatile Memory ◽  
Resistance State ◽  
Volatile Memory ◽  
Oxide Solid Electrolyte

In this paper, we report the bipolar resistive switching behaviors in Ag/Sm2O3/Pt structures where the Sm2O3 thin films act as solid electrolyte layer of electrochemical metallization memory (ECM) devices. The memory devices show reproducible and stable bipolar resistive switching over 1000 cycles with a resistance ratio (high-resistance state to low-resistance state) of over 4 orders of magnitude and stable retention for over 104[Formula: see text]s at room temperature. Moreover, the benefits of high yield and multilevel storage possibility make the device promising in the next generation non-volatile memory application.

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