scholarly journals Growth of High-Quality GaN Films on Epitaxial AlN/Sapphire Templates

2019 ◽  
Author(s):  
Xiejia
Keyword(s):  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Rocking Curve ◽  
Force Microscopy ◽  
Atomic Force ◽  
Low Dislocation Density ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Microscopy Images

High quality GaN films have been successfully grown on multi-AlN/sapphire templates by metal organic chemical vapor deposition system. The Hall mobility and the carrier concentration of 720 cm2/Vs and 6.7x1016 cm-3 at 300K, respectively, along with low dislocation density of 4.1x109 cm-2 have been achieved. The X-ray rocking curve full-width at half-maximum were 160 and 290 arcsec for (0004) and (20-24) reflection planes also obtained, respectively. Besides that, the atomic force microscopy images showed smooth surface morphology and a higher intensity near the band edge was also observed by photoluminescence measurement result.

scholarly journals GROWTH AND PROPERTIES OF STACKED SELF-ASSEMBLED In0.5Ga0.5As QUANTUM DOTS

2012 ◽  
Vol 2 (1) ◽  
pp. 1
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
Abd. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Self ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

Self-assembled In0.5Ga0.5As quantum dots (QDs) were grown using metal-organic chemical vapor deposition (MOCVD) on GaAs (100) substrate with different number of stacking QDs layers. Surface study using atomic force microscopy (AFM) shows that surface morphology of the self-assembled QDs change with different number of stacking QDs layers caused by the previous QDs layers and the thickness of the GaAs spacer layers. PL measurement shows variation in the PL spectra as a function of number of stacking layers of In0.5Ga0.5As QDs. The PL peak positions blue-shifted from 1225 nm to 1095 nm and dramatically increase in intensity with increasing number of stacking QDs layers.

Deposition of GaN Films on Freestanding CVD Thick Diamond Films

2010 ◽  
Vol 654-656 ◽  
pp. 1740-1743 ◽  
Author(s):  
Dong Zhang ◽  
Yi Zhen Bai ◽  
Fu Wen Qin ◽  
Ji Ming Bian
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Energy ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

Influence of TMGa Flux on the Improvement of GaN Films on Thick Freestanding Diamond Films

2013 ◽  
Vol 475-476 ◽  
pp. 1299-1302
Author(s):  
Shan Lin Cui ◽  
Hong Gang ◽  
Zheng Nian Li
Keyword(s):  
Electron Cyclotron Resonance ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
High Quality ◽  
Small Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Organic ◽  
Trimethyl Gallium

High-quality GaN films are deposited on diamond films using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) under the condition of the proper Trimethyl gallium (TMGa) flux. The influence of TMGa flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films with small surface roughness and high c-orientation are successfully achieved at the optimized flux. The most significant improvements in morphological and structural properties of GaN films are obtained by using a proper TMGa flux

scholarly journals Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 339 ◽  
Author(s):  
Gene Siegel ◽  
Gordon Gryzbowcki ◽  
Albert Hilton ◽  
Christopher Muratore ◽  
Michael Snure
Keyword(s):  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Force Microscopy ◽  
Lattice Matching ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH3 pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD.

ZnO Films Growth at Different Temperature on the Substrate of Corning Glass by MOCVD

2010 ◽  
Vol 428-429 ◽  
pp. 447-449
Author(s):  
W. Tang ◽  
X. Yang ◽  
C. Wang ◽  
C. Zhao ◽  
X. Gao ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Visible Range ◽  
Organic Chemical ◽  
Zno Films ◽  
Force Microscopy ◽  
Corning Glass ◽  
Atomic Force ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Corning Glass Substrate

We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46°, indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM).

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi
Keyword(s):  
Quantum Dots ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Organic Chemical ◽  
Self Assembling ◽  
Atomic Force ◽  
Peak Energy ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

CrystEngComm ◽  
2020 ◽  
Vol 22 (7) ◽  
pp. 1160-1165 ◽  
Author(s):  
Yingnan Huang ◽  
Jianxun Liu ◽  
Xiujian Sun ◽  
Xiaoning Zhan ◽  
Qian Sun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Transition Layer ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Si Substrate ◽  
High Quality ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film with a smooth surface grown on planar Si by metal–organic chemical vapor deposition.

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