Influence of TMGa Flux on the Improvement of GaN Films on Thick Freestanding Diamond Films
2013 ◽
Vol 475-476
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pp. 1299-1302
Keyword(s):
High-quality GaN films are deposited on diamond films using an electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) under the condition of the proper Trimethyl gallium (TMGa) flux. The influence of TMGa flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films with small surface roughness and high c-orientation are successfully achieved at the optimized flux. The most significant improvements in morphological and structural properties of GaN films are obtained by using a proper TMGa flux
2010 ◽
Vol 654-656
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pp. 1740-1743
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Keyword(s):
2019 ◽
2013 ◽
Vol 475-476
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pp. 1303-1306
Keyword(s):
Keyword(s):
Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 5A)
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pp. 2829-2832
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